Safaira o se tioata se tasi o alumina, e patino i le faiga tioata tolu, fausaga hexagonal, o lona fausaga tioata e aofia ai atoms okesene tolu ma atoms alumini e lua i le ituaiga sootaga covalent, faatulagaina vavalalata, faatasi ai ma filifili sootaga malosi ma le malosi lattice, ao lona. totonu tioata toetoe lava leai ni mea le mama po o ni faaletonu, o lea e lelei tele insulation eletise, manino, conductivity vevela lelei ma uiga rigidity maualuga. Fa'aaoga lautele e fai ma fa'amalama fa'amalama ma mea fa'ameamea e maualuga le fa'atinoga. Ae ui i lea, o le fausaga mole mole o le safaira e faigata ma o loʻo i ai le anisotropy, ma o le aʻafiaga i luga o mea faʻapitoa faʻapitoa e matua ese foi mo le gaioiga ma le faʻaogaina o taʻiala tioata eseese, o lea e ese ai le faʻaaogaina. I se tulaga lautele, o loʻo maua le safaira substrates i C, R, A ma M faʻatonuga vaalele.
O le faaaogaina oC-vaalele safaira wafer
Gallium nitride (GaN) e pei o se semiconductor tupulaga lona tolu lautele, e iai le vaeluaga tuusaʻo tuusaʻo, malosi atomic sootaga, maualuga le vevela conductivity, mautu kemisi lelei (toetoe lava a le pala e so o se acid) ma le malosi malosi anti-irradiation, ma e lautele faamoemoega i. le faʻaogaina o optoelectronics, maualuga le vevela ma masini eletise ma masini microwave maualuga. Ae ui i lea, ona o le maualuga o le faʻafefeteina o GaN, e faigata ai ona maua ni mea tioata taʻitasi lapopoa, o le auala masani o le faʻatinoina o le tuputupu aʻe o le heteroepitaxy i luga o isi mea faʻapipiʻi, lea e maualuga atu manaʻoga mo mea faʻapipiʻi.
Pe a faatusatusa i lesafaira mea'aifaʻatasi ai ma isi foliga tioata, o le lattice faifai pea mismatch fua faatatau i le va o le C-vaalele (<0001> orientation) safaira wafer ma ata tifaga teuina i vaega Ⅲ-Ⅴ ma Ⅱ-Ⅵ (e pei o GaN) e fai si laʻititi, ma le lattice faifai pea mismatch. fua faatatau i le va o le lua ma leAlN ata tifagae mafai ona faʻaaogaina e pei o le paʻu paʻu e sili atu ona laʻititi, ma e fetaui ma manaʻoga o le maualuga o le vevela i le GaN crystallization faagasologa. O le mea lea, o se mea masani substrate mo le tuputupu aʻe GaN, lea e mafai ona faʻaaogaina e fai ai paʻepaʻe / lanumoana / lanu meamata, laser diodes, infrared detectors ma isi.
E taua le taʻua o le ata GaN o loʻo tupu i luga o le C-plane sapphire substrate e tupu aʻe i luga o lona polar axis, o lona uiga, o le itu o le C-axis, e le gata o le tuputupu aʻe matua ma le epitaxy process, tau maualalo, faʻamautu faaletino. ma mea tau kemisi, ae sili atu foi le faatinoga o gaioiga. O atoms o le C-oriented safaira wafer o loʻo faʻapipiʻiina i se faatulagaga O-al-al-o-al-O, ae o le M-oriented ma le A-oriented safaira tioata o loʻo faʻapipiʻiina i al-O-al-O. Talu ai ona o Al-Al e maualalo le malosi o le fusifusia ma sili atu le vaivai nai lo le Al-O, faʻatusatusa i le M-oriented ma le A-oriented safaira tioata, O le gaioiga o le C-sapphire e masani lava ona tatala le Al-Al key, lea e faigofie ona faʻagasolo. , ma mafai ona maua le maualuga maualuga, ona maua ai lea o le sili atu le lelei o le gallium nitride epitaxial, lea e mafai ona faʻaleleia atili ai le maualuga o le lanu paʻepaʻe / lanumoana lanumoana. I le isi itu, o ata e ola i luga o le C-axis e iai aʻafiaga faʻafuaseʻi ma piezoelectric polarization, e mafua ai le malosi o le eletise eletise i totonu o ata tifaga (active layer quantum Wells), lea e faʻaitiitia ai le faʻamalamalamaina o ata GaN.
A-vaalele safaira wafertalosaga
Ona o lona lelei atoatoa faatinoga, aemaise transmittance sili atu, safaira tioata tasi e mafai ona faaleleia le aafiaga infrared penetration, ma avea ma se mea lelei i totonu-infrared faamalama mea, lea sa masani ona faaaoga i meafaigaluega photoelectric militeri. O le safaira o se vaalele polar (C plane) i le itu masani o foliga, o se mea e le polar surface. E masani lava, o le lelei o le tioata safaira A-oriented e sili atu nai lo le tioata C-oriented, ma le faʻaitiitia o le faʻalavelave, faʻaitiitia le fausaga o Mosaic ma sili atu le fausaga tioata atoatoa, o lea e sili atu ai le faʻaogaina o le moli. I le taimi lava e tasi, ona o le Al-O-Al-O atomic bonding mode i luga o le vaalele a, o le maaa ma le ofuina o le safaira A-oriented e sili atu le maualuga nai lo le C-oriented safaira. O le mea lea, o meataalo A-directional e tele lava ina faʻaaogaina e fai ma mea faʻamalama; E le gata i lea, o le safaira foi o loʻo i ai le faʻaogaina o le dielectric tumau ma le maualuga o mea faʻapipiʻi, o lea e mafai ai ona faʻaogaina i tekonolosi microelectronics hybrid, ae faʻapea foʻi mo le tuputupu aʻe o taʻitaʻi sili, e pei o le faʻaaogaina o TlBaCaCuO (TbBaCaCuO), Tl-2212, o le tuputupu ae. o ata eseese epitaxial superconducting i luga o le cerium oxide (CeO2) safaira tu'ufa'atasi substrate. Ae ui i lea, ona o le tele o le malosi o le Al-O, e sili atu ona faigata ona faʻaogaina.
Fa'aaogaina oR /M va'alele safaira wafer
O le R-vaalele o le mea e le polar luga o se safaira, o lea la o le suiga i le tulaga R-vaalele i se masini safaira e tuʻuina atu ai mea eseese masini, vevela, eletise, ma mea faʻapitoa. I se tulaga lautele, o le R-surface sapphire substrate e sili ona lelei mo le heteroepitaxial deposition of silicon, aemaise lava mo semiconductor, microwave ma microelectronics integrated circuit applications, i le gaosiga o le taʻitaʻia, isi vaega superconducting, tetee maualuga, gallium arsenide e mafai foi ona faʻaaogaina mo R- ituaiga substrate tuputupu ae. I le taimi nei, faʻatasi ai ma le taʻutaʻua o telefoni feaveaʻi ma komipiuta komipiuta komipiuta, R-face sapphire substrate ua suia le faʻaogaina o masini SAW o loʻo i ai nei o loʻo faʻaaogaina mo telefoni feaveaʻi ma komipiuta komepiuta, e tuʻuina atu ai se mea faʻapipiʻi mo masini e mafai ona faʻaleleia le faʻatinoga.
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Taimi meli: Iul-16-2024