Semiconductor meafaitino ua faʻaleleia e ala i le tolu faʻaliliuga augatupulaga:
1st Gen (Si/Ge) na faataatia le faavae o mea faaeletonika faaonaponei,
2nd Gen (GaAs/InP) na malepe i le optoelectronic ma le maualuga-televave pa puipui e faʻamalosia ai le suiga o faʻamatalaga,
3rd Gen (SiC/GaN) o lo'o fa'atautaia nei le malosi ma lu'itau ogaoga-si'osi'omaga, e mafai ai ona soli le carbon ma le 6G vaitau.
O lenei alualu i luma ua faʻaalia ai se suiga faʻatusa mai le agavaʻa i le faʻapitoa i mea faitino.
1. Ulua'i Tupulaga Semiconductors: Silicon (Si) ma Germanium (Ge)
Tala'aga Fa'asolopito
I le 1947, na faia ai e Bell Labs le germanium transistor, ma faailogaina le vaveao o le semiconductor era. E oo atu i le 1950s, ua suia malie le silikoni le germanium e avea ma faavae o taʻaloga tuʻufaʻatasia (ICs) ona o lona faʻamautu o le oxide layer (SiO₂) ma le tele o faʻaagaga faalenatura.
Meatotino Mea
ⅠVavega:
Germanium: 0.67eV (vati vaapiapi, faigofie i le leakage i le taimi nei, leaga maualuga-vevela faatinoga).
Silikoni: 1.12eV (gap fa'a'au'au, talafeagai mo ta'aloga fa'atatau ae le mafai ona fa'amalama).
Ⅱ,Faʻamanuiaga ole Silicon:
Fa'alenatura fau se oxide maualuga (SiO₂), e mafai ai ona fai le MOSFET.
Tau maualalo ma le tele o le eleele (~ 28% o le tuufaatasiga o le crustal).
Ⅲ,Tapulaa:
E maualalo le fe'avea'i eletise (na'o le 1500 cm²/(V·s)), fa'atapula'aina le fa'atinoina o le fa'atinoina o taimi maualuga.
Fa'apalepale vaivai/vevela (maualuga le vevela o galuega. ~150°C).
Talosaga Autu
Ⅰ,Vaega Fa'atasi (ICs):
PPU, meataalo manatua (fa'ata'ita'iga, DRAM, NAND) fa'alagolago ile silikoni mo le maualuga fa'atasi.
Fa'ata'ita'iga: Intel's 4004 (1971), o le microprocessor fa'atau pisinisi muamua, fa'aaogaina le 10μm silicon technology.
Ⅱ,Masini Malosi:
O thyristors muamua ma MOSFETs maualalo-voltage (fa'ata'ita'iga, sapalai eletise PC) sa fa'avae i luga ole kasa.
Lu'i & Fa'aletonu
O le Germanium na fa'ate'a ese ona o le tafe ma le le mautu o le vevela. Ae ui i lea, o tapulaʻa o le silicon i optoelectronics ma le malosi-maualuga talosaga na faʻaosofia ai le atinaʻeina o isi-gen semiconductors.
2 Semiconductors Tulaga Lua: Gallium Arsenide (GaAs) ma Indium Phosphide (InP)
Atina'e Tala'aga
I le vaitau o le 1970-1980s, o matā'upu fa'asolo mai e pei o feso'ota'iga fe'avea'i, feso'ota'iga fibre opitika, ma tekonolosi satelite na fa'atupuina ai le mana'omia tele mo mea fa'a-optoelectronic maualuga ma lelei. O lenei mea na mafua ai le alualu i luma o semiconductors tuusaʻo e pei o GaAs ma InP.
Meatotino Mea
Bandgap & Optoelectronic Performance:
GaAs: 1.42eV (gap sa'o, e mafai ai ona fa'aoso le malamalama-lelei mo lasers/LED).
InP: 1.34eV (sili ona fetaui mo faʻaoga umi-umi, faʻataʻitaʻiga, 1550nm fiber-optic communications).
Fe'avea'i Electron:
E maua e GaA le 8500 cm²/(V·s), sili atu le silicon (1500 cm²/(V·s)), e sili atu ona lelei mo le GHz-range signal processing.
Fa'aletonu
lSu'ega ma'ale'ale: E faigata tele ona gaosia nai lo le kasa; GaAs wafers tau 10x sili atu.
lLeai se oxide fa'aletino: E le pei o le silicon's SiO₂, GaAs/InP e leai ni oxide mautu, e fa'alavelaveina ai le gaosiga o le IC maualuga.
Talosaga Autu
lRF pito i luma:
Fa'aola eletise feavea'i (PA), satelite transceivers (fa'ata'ita'iga, GaAs-based HEMT transistors).
lOptoelectronics:
Laser diodes (CD/DVD drives), LEDs (mumu/infrared), fiber-optic modules (InP lasers).
lSpace Solar Cells:
O sela GaA e ausia le 30% le lelei (vs. ~ 20% mo le silicon), e taua tele mo satelite.
lFa'agata Fa'atekonolosi
O tau maualuga e fa'agata ai le GaAs/InP i fa'ailoga maualuga, e taofia ai i latou mai le suia o le pule'aga o le silikoni i tupe meataalo.
Semiconductors Tulaga Tolu (Semiconductors Wide-Bandgap): Silicon Carbide (SiC) ma Gallium Nitride (GaN)
Avetaavale Tekonolosi
Energy Revolution: O ta'avale eletise ma le fa'afouina o le eletise fa'atasi e mana'omia ai masini eletise sili atu ona lelei.
Mana'oga Maualuga: 5G feso'ota'iga ma fa'asologa o le radar e mana'omia ai laina maualuga ma le malosi o le malosi.
Si'osi'omaga Mata'utia: E mana'omia mea e mafai ona tatalia le vevela e sili atu i le 200°C.
Uiga o Mea
A'oa'oga Avanoa Va'ava'a:
lSiC: Bandgap o le 3.26eV, malepelepe malosi eletise eletise 10x le silikoni, e mafai ona faʻafefeteina i luga ole 10kV.
lGaN: Bandgap o le 3.4eV, eletonika fe'avea'i o le 2200 cm²/(V·s), fa'asilisili i le fa'atinoina o taimi maualuga.
Pulea vevela:
SiC's thermal conductivity e oʻo atu i le 4.9 W / (cm · K), faʻatolu taimi sili atu nai lo le silikoni, faʻapena lelei mo talosaga maualuga-mana.
Lu'itau Fa'aletino
SiC: O le tuputupu aʻe lemu tasi-kristal e manaʻomia ai le vevela i luga aʻe o le 2000 ° C, e mafua ai le faaletonu o le wafer ma le maualuga o tau (o le 6-inisi SiC wafer e 20x sili atu le taugata nai lo le silicon).
GaN: E leai se mea fa'anatura, e masani ona mana'omia le heteroepitaxy i luga o le safaira, SiC, po'o le silicon substrates, e o'o atu ai i lattice le fetaui lelei.
Talosaga Autu
Malosiaga Fa'aeletonika:
EV inverters (fa'ata'ita'iga, Tesla Model 3 fa'aoga SiC MOSFETs, fa'aleleia le lelei e 5-10%).
Nofoaga fa'atosina vave / fa'aoga (gaN masini e mafai ai le 100W + fa'aola vave a'o fa'aitiitia le lapopoa i le 50%).
Meafaigaluega RF:
5G tulaga fa'avae eletise eletise (GaN-on-SiC PAs lagolago mmWave frequency).
Radar militeri (GaN ofo atu 5x le malosi malosi o GaAs).
Optoelectronics:
UV LEDs (AlGaN mea e faʻaaogaina i le faʻamaʻiina ma le suʻeina o le lelei o le vai).
Tulaga Alamanuia ma Va'aiga i le Lumana'i
O lo'o pulea e le SiC le maketi maualuga, fa'atasi ai ma masini ta'avale ua uma ona gaosia, e ui o tau o lo'o tumau pea ma pa.
GaN o loʻo faʻavavevave faʻalauteleina i mea tau eletise (faʻatau vave) ma talosaga RF, faʻafeiloaʻi i le 8-inisi wafers.
O mea fa'asolo mai e pei o le gallium oxide (Ga₂O₃, bandgap 4.8eV) ma taimane (5.5eV) e mafai ona fausia ai se “tupulaga lona fa” o semiconductor, tuleia tapulaa voltage i tua atu o le 20kV.
Fa'atasi ma Fa'atasi o Tupulaga Semiconductor
Fa'atasi, ae le o le Suiga:
O lo'o fa'atumauina pea le sili sili i tupe meataalo ma mea fa'atau (95% o le maketi semiconductor a le lalolagi).
GaAs ma InP fa'apitoa i niches maualuga ma optoelectronic.
SiC/GaN e le mafai ona suitulaga i le malosi ma mea tau alamanuia.
Fa'ata'ita'iga Tu'ufa'atasi Tekonolosi:
GaN-on-Si: Fa'atasia le GaN ma mea'ai silikoni taugofie mo le fa'atonuina vave ma fa'aoga RF.
SiC-IGBT hybrid modules: Faʻaleleia le faʻaogaina o fesoʻotaʻiga.
Tulaga i le lumana'i:
Tu'ufa'atasiga tu'ufa'atasi: Tu'ufa'atasia meafaitino (fa'ata'ita'iga, Si + GaN) i luga o le pu e tasi e fa'apaleni ai le fa'atinoga ma le tau.
O mea fa'apipi'i lautele (fa'ata'ita'iga, Ga₂O₃, taimane) e mafai ona fa'aogaina le tele-maualuga-voltage (>20kV) ma fa'aoga fa'akomupiuta quantum.
Gaosi fa'atatau
GaAs laser epitaxial wafer 4 inisi 6 inisi
12 inisi SIC substrate silicon carbide vasega muamua lautele 300mm lapopo'a tele 4H-N Talafeagai mo le malosi maualuga masini dissipation vevela
Taimi meli: Me-07-2025