Silicon carbide (SiC) o se tuufaatasiga mataʻina e mafai ona maua i totonu uma o le semiconductor alamanuia ma oloa sima maualuga. E masani ona o'o atu ai i le fenumia'i o tagata ta'ito'atasi e ono fa'aseseina i latou o le ituaiga lava lea o oloa. O le mea moni, a'o fa'asoa tutusa vaila'au tu'ufa'atasi, e fa'aalia le SiC e pei o sima fa'aluma e fa'aofuofu po'o semiconductor maualuga-lelei, o lo'o ta'alo ese'ese matafaioi i mea tau alamanuia. E iai le eseesega tele i le va o sima-grade ma semiconductor-grade SiC meafaitino i tulaga o le fausaga tioata, gaosiga o gaosiga, uiga faʻatinoga, ma le faʻaogaina o fanua.
- Tulaga Mama Eseesega mo Mea Mata
Ceramic-grade SiC o lo'o fa'amalieina mana'oga mama mo lona fa'ameamea o le pauta. E masani lava, o oloa fa'apisinisi fa'atasi ma le 90% -98% mama e mafai ona fa'amalieina le tele o mana'oga fa'aoga, e ui o sima fa'atulagaina maualuga e ono mana'omia ai le 98% -99.5% mama (fa'ata'ita'iga, SiC fa'apipi'i tali e mana'omia le fa'atonutonuina o mea e maua fua. E fa'apalepale i nisi o mea leaga ma o nisi taimi e fa'apipi'i ai ma le loto i ai fesoasoani fa'apipi'i e pei o le alumini oxide (Al₂O₃) po'o le yttrium oxide (Y₂O₃) e fa'aleleia ai le fa'aogaina o le sintering, fa'aitiitia le vevela o le sintering, ma fa'aleleia atili le tele o oloa.
Semiconductor-grade SiC e manaʻomia le maualuga o le mama atoatoa. Ole SiC tioata tasi ole substrate e manaʻomia le ≥99.9999% (6N) mama, faʻatasi ai ma nisi o talosaga maualuga e manaʻomia le 7N (99.99999%) mama. Epitaxial layers e tatau ona faʻatumauina le faʻaogaina o le le mama i lalo ole 10¹⁶ atoms/cm³ (aemaise lava le aloese mai le loloto o le eleelea pei ole B, Al, ma V). E oʻo lava i faʻamaʻi pipisi e pei o le uʻamea (Fe), alumini (Al), poʻo le boron (B) e mafai ona matua aʻafia ai meatotino eletise e mafua ai le faʻasalalauina o le avetaʻavale, faʻaitiitia le malosi o le fanua malepelepe, ma iu ai ina faʻafefeteina le faʻaogaina o masini ma le faʻamaoni, e manaʻomia ai le pulea lelei o le le mama.
Silicon carbide mea semiconductor
- Eseese Fauga tioata ma tulaga lelei
Ceramic-grade SiC o lo'o i ai muamua e pei o le polycrystalline pa'u po'o tino sintered e aofia ai le tele o microcrystals SiC fa'asolosolo fa'asolosolo. O mea e mafai ona aofia ai le tele o polytypes (fa'ataʻitaʻiga, α-SiC, β-SiC) e aunoa ma le faʻatonutonuina o polytypes faʻapitoa, ma le faʻamamafa nai lo le maualuga o meafaitino ma le tutusa. O lona fausaga i totonu o lo'o fa'aalia ai le tele o tuaoi o saito ma pores microscopic, ma e mafai ona i ai ni fesoasoani fa'amau (fa'ata'ita'iga, Al₂O₃, Y₂O₃).
Semiconductor-grade SiC e tatau ona tasi-kristal substrates po'o epitaxial layers ma fausaga tioata maualuga oka. E manaʻomia ni polytypes faʻapitoa e maua mai i metotia faʻatupu tioata saʻo (faʻataʻitaʻiga, 4H-SiC, 6H-SiC). O mea tau eletise e pei o le electron mobility ma bandgap e matua maaleale lava i le filifilia o polytype, e manaʻomia ai le pulea lelei. I le taimi nei, o le 4H-SiC o loʻo pulea le maketi ona o le maualuga o mea eletise e aofia ai le maualuga o le feʻaveaʻi ma le malepelepe malosi o le fanua, ma faʻamaonia ai mo masini eletise.
- Fa'atusatusaga Lavelave Fa'agasologa
Ceramic-grade SiC e fa'aaogaina faiga fa'agaioiga faigofie (sauniuniga o le pauta → fa'atupu → sintering), fa'atusa ma le "faia piliki." O le faagasologa e aofia ai:
- Fa'afefiloi le pa'u SiC tulaga fa'apisinisi (e masani ona lapopo'a micron) ma mea fa'amau
- Fausia e ala i le oomi
- Sintering maualuga-vevela (1600-2200°C) e maua ai le densification e ala i diffusion vaega.
Ole tele ole talosaga e mafai ona fa'amalieina ile> 90% density. Ole fa'agasologa atoa e le mana'omia le fa'atonu sa'o o le tuputupu a'e tioata, e taula'i atu i le fa'atupuina ma le fa'asa'o fa'atasi. O mea lelei e aofia ai le fetuutuunai o faagasologa mo foliga lavelave, e ui lava e fai si maualalo o manaoga mama.
Semiconductor-grade SiC e aofia ai faiga e sili atu ona lavelave (sauniuniga o le paʻu mama maualuga → faʻatupuina o meaʻai faʻamaʻi e tasi → faʻapipiʻi epitaxial wafer → faʻapipiʻi masini). Laasaga autu e aofia ai:
- Fa'atosina tapenaga e ala ile felauaiga ausa fa'aletino (PVT).
- Sublimation o le paʻu SiC i tulaga ogaoga (2200-2400°C, maualuga gaogao)
- Fa'atonu sa'o o fa'alili ole vevela (±1°C) ma fa'amaufa'ailoga mamafa
- Epitaxial layer tuputupu aʻe e ala i vailaʻau vapor deposition (CVD) e faia tutusa mafiafia, doped layer (e masani lava e tele i le sefulu microns)
O le fa'agasologa atoa e mana'omia ai si'osi'omaga sili ona mama (fa'ata'ita'iga, Vasega 10 potu mama) e puipuia ai le fa'aleagaina. O uiga e aofia ai le sa'o atoatoa o le faagasologa, e mana'omia ai le pulea o nofoaga vevela ma le tafe o le kesi, faatasi ai ma manaoga faʻapitoa mo le mama mama (> 99.9999%) ma meafaigaluega faʻapitoa.
- Eseesega Taua o Tau ma Fa'asinomaga Maketi
Fa'ailoga siC-grade SiC:
- Mea mata: pa'u fa'atauva'a
- Fa'agasologa faigofie
- Tau maualalo: E afe i le sefulu afe RMB i le tone
- Fa'aoga lautele: Abrasives, refractoryries, ma isi alamanuia ma'ale'ale tau
Semiconductor-grade SiC uiga:
- Taamilomilo tuputupu ae substrate umi
- Lu'itau le puleaina o faaletonu
- Maualalo fua faatatau
- Tau maualuga: E afe USD ile 6-inisi mea'ai
- Maketi taula'i: Mea fa'aeletonika maualuga e pei o masini eletise ma vaega RF
Faatasi ai ma le televave o le atinaʻeina o taavale fou malosi ma fesoʻotaʻiga 5G, o loʻo faʻatupulaia le manaʻomia o maketi.
- Fa'atusa Fa'aaogāga 'ese'ese
Ceramic-grade SiC o lo'o avea ma "mea faigaluega fa'apisinisi" fa'apitoa mo le fa'aogaina o fausaga. O le fa'aaogaina o ana mea fa'ainisinia lelei (maualuga ma'a'a, tete'e o le ofuina) ma mea fa'amama (maualuga le vevela, fa'ama'i fa'ama'i), e sili i:
- Abrasive (uili olo, pepa oneone)
- La'au fa'ato'a (lafu umu vevela maualuga)
- La'ei/mea e a'e mea (tino pamu, paipa)
Silicon carbide sima fausaga vaega
Semiconductor-grade SiC o loʻo faʻatinoina e pei o le "eletise elite," faʻaaogaina lona lautele bandgap semiconductor meatotino e faʻaalia ai tulaga tulaga ese i masini eletise:
- Masini eletise: EV inverters, grid converters (faʻaleleia le malosi o le liua o le eletise)
- RF masini: 5G nofoaga autu, radar faiga (fa'agaoioi luga o laina fa'aoga)
- Optoelectronics: Mea fa'apipi'i mo moli lanu moana
200-milimita SiC epitaxial wafer
| Fua | SiC sima-vaega | Semiconductor-grade SiC |
| Fauga tioata | Polycrystalline, tele polytypes | tioata tasi, polytypes filifilia ma'oti |
| Taulaiga Fa'agasologa | Fa'asa'o ma fa'atonutonu foliga | Fa'atonuga lelei ma mea tau eletise |
| Fa'amuamua o Fa'atinoga | Malosiaga faʻainisinia, faʻafefeteina, faʻamautu vevela | Mea tau eletise (bandgap, breakdown field, etc.) |
| Fa'atinoga Fa'atusa | Vaega fa'avae, vaega e fa'alavalava, vaega vevela maualuga | Masini maualuga-malosi, masini maualuga, masini optoelectronic |
| Avetaavale tau | Fa'agasologa fetuutuunai, tau mea mata | Fuafuaga tuputupu ae tioata, saʻo meafaigaluega, mama mea mata |
I le aotelega, o le eseesega autu e mafua mai i a latou faʻamoemoega faʻapitoa: siC-grade SiC faʻaaogaina "foliga (faʻatulagaina)" ae faʻaogaina le semiconductor-grade SiC "meatotino (eletise)." O le mea muamua o lo'o tulituliloaina le tau-lelei fa'ainisinia/maalili fa'atinoga, a'o le mea mulimuli o lo'o fa'atusalia ai le tumutumu o mea fa'atekonolosi sauniuni e pei o le mama-ma'a-ma'a-ma'a-mea-mea-mea-mea e fa'atino. E ui ina fa'asoa fa'atasi le fa'atupu fa'ama'i, siC-grade ma semiconductor-grade SiC o lo'o fa'aalia ai le eseesega manino i le mama, fausaga tioata, ma le gaosiga o gaosiga - ae o lo'o faia uma sao taua i le gaosiga o alamanuia ma le alualu i luma tekinolosi i a latou vaega.
O le XKH o se atinaʻe faʻatekonolosi faʻapitoa i le R & D ma le gaosiga o mea faʻapipiʻi silicon carbide (SiC), e ofoina atu le atinaʻe faʻapitoa, masini faʻapitoa, ma auaunaga togafitiga faʻapitoa e amata mai i le maualuga o le mama SiC ceramics i semiconductor-grade SiC tioata. Leveraging tekinolosi sauniuni ma atamai gaosiga laina, XKH maua tunable-performance (90% -7N mama) ma fausaga-pulea (polycrystalline / single-crystalline) SiC oloa ma fofo mo tagata faʻatau i semiconductor, malosi fou, aerospace ma isi pito pito fanua. O a matou oloa e maua le tele o faʻaoga i masini semiconductor, taʻavale eletise, fesoʻotaʻiga 5G ma pisinisi faʻapitoa.
O mea nei o masini sima carbide silicon na gaosia e XKH.
Taimi meli: Iul-30-2025