SiC wafer's abstract
Silicon carbide (SiC) wafers ua avea ma sui o filifiliga mo le maualuga-mana, maualuga-tele, ma le maualuga-vevela eletise i luga o taavale afi, malosi faʻafouina, ma aerospace. O la matou faila e aofia ai polytypes autu ma faiga faʻapipiʻi - nitrogen-doped 4H (4H-N), high-purity semi-insulating (HPSI), nitrogen-doped 3C (3C-N), ma le p-type 4H / 6H (4H / 6H-P) - ofo atu i ni togi lelei se tolu: PRIME (faʻaiila atoatoa, masini-grades (faʻagasologa) faʻataʻitaʻiga, Dpolished masini (substrates) SU'ESU'EGA (fa'ailoga epi fa'apitoa ma fa'amatalaga o le doping mo su'esu'ega ma su'esu'ega). E 2″, 4″, 6″, 8″, ma le 12″ e fa'atatau i mea faigaluega fa'aleaganu'u ma mea fa'aola. Matou te tu'uina atu fo'i fa'aliga fa'a-monocrystalline ma tioata fa'atatau tonu o fatu e lagolago ai le tuputupu a'e tioata i totonu o le fale.
O tatou 4H-N wafers faʻaalia densities ave mai le 1 × 10¹⁶ i le 1 × 10¹⁹ cm⁻³ ma resistivities o 0.01-10 Ω·cm, tuuina atu eletonika sili mobility ma malepelepe fanua i luga 2 MV/cm-lelei mo Schottky diodes, MOSFETs. HPSI mea'ai e sili atu i le 1×10¹² Ω·cm resistivity ma micropipe densities i lalo ole 0.1 cm⁻², fa'amautinoa le la'ititi o le tafe mo masini RF ma microwave. Cubic 3C-N, avanoa i le 2″ ma le 4″ formats, e mafai ai le heteroepitaxy i luga o le silikoni ma lagolagoina ata fou photonic ma MEMS talosaga. P-ituaiga 4H/6H-P wafers, faʻapipiʻi i le alumini i le 1 × 10¹⁶–5 × 10¹⁸ cm⁻³, faʻafaigofie le faʻaogaina o masini faʻapipiʻi.
PRIME wafers o lo'o fa'amama fa'ama'i fa'ainisinia e o'o i le <0.2 nm RMS le talatala o luga, atoa suiga mafiafia i lalo ole 3 µm, ma le aufana <10 µm. DUMMY substrates e faatelevaveina le fa'apotopotoga ma su'ega afifiina, ae o RESEARCH wafers e fa'aalia ai le mafiafia o le epi-layer o le 2-30 µm ma le doping fa'apitoa. O oloa uma e faʻamaonia e le X-ray diffraction (rocking curve <30 arcsec) ma Raman spectroscopy, faʻatasi ai ma suʻega eletise-Hall measurements, C-V profiling, ma micropipe scanning-faʻamautinoa le tausisia o le JEDEC ma le SEMI.
O pa'u e oo atu i le 150 mm le lautele o lo'o fa'atupuina e ala i le PVT ma le CVD fa'atasi ai ma va'aiga ta'ape i lalo ole 1×10³ cm⁻² ma maualalo le aofa'i ole paipa. O tioata fatu e tipiina i totonu ole 0.1° o le c-axis e faʻamautinoa ai le toe faʻaleleia o le tuputupu aʻe ma le maualuga o le seleselega.
E ala i le tu'ufa'atasia o le tele o polytypes, suiga o le doping, togi lelei, lapopo'a, ma le gaosiga i totonu o le fale ma fatu-ma'aisa, o lo tatou SiC substrate platform streamlines filifili sapalai ma fa'avavevaveina le atina'eina o masini mo ta'avale eletise, laina atamai, ma fa'aoga si'osi'omaga faigata.
SiC wafer's abstract
Silicon carbide (SiC) wafers ua avea ma sui o filifiliga mo le maualuga-mana, maualuga-tele, ma le maualuga-vevela eletise i luga o taavale afi, malosi faʻafouina, ma aerospace. O la matou faila e aofia ai polytypes autu ma faiga faʻapipiʻi - nitrogen-doped 4H (4H-N), high-purity semi-insulating (HPSI), nitrogen-doped 3C (3C-N), ma le p-type 4H / 6H (4H / 6H-P) - ofo atu i ni togi lelei se tolu: PRIME (faʻaiila atoatoa, masini-grades (faʻagasologa) faʻataʻitaʻiga, Dpolished masini (substrates) SU'ESU'EGA (fa'ailoga epi fa'apitoa ma fa'amatalaga o le doping mo su'esu'ega ma su'esu'ega). E 2″, 4″, 6″, 8″, ma le 12″ e fa'atatau i mea faigaluega fa'aleaganu'u ma mea fa'aola. Matou te tu'uina atu fo'i fa'aliga fa'a-monocrystalline ma tioata fa'atatau tonu o fatu e lagolago ai le tuputupu a'e tioata i totonu o le fale.
O tatou 4H-N wafers faʻaalia densities ave mai le 1 × 10¹⁶ i le 1 × 10¹⁹ cm⁻³ ma resistivities o 0.01-10 Ω·cm, tuuina atu eletonika sili mobility ma malepelepe fanua i luga 2 MV/cm-lelei mo Schottky diodes, MOSFETs. HPSI mea'ai e sili atu i le 1×10¹² Ω·cm resistivity ma micropipe densities i lalo ole 0.1 cm⁻², fa'amautinoa le la'ititi o le tafe mo masini RF ma microwave. Cubic 3C-N, avanoa i le 2″ ma le 4″ formats, e mafai ai le heteroepitaxy i luga o le silikoni ma lagolagoina ata fou photonic ma MEMS talosaga. P-ituaiga 4H/6H-P wafers, faʻapipiʻi i le alumini i le 1 × 10¹⁶–5 × 10¹⁸ cm⁻³, faʻafaigofie le faʻaogaina o masini faʻapipiʻi.
PRIME wafers o lo'o fa'amama fa'ama'i fa'ainisinia e o'o i le <0.2 nm RMS le talatala o luga, atoa suiga mafiafia i lalo ole 3 µm, ma le aufana <10 µm. DUMMY substrates e faatelevaveina le fa'apotopotoga ma su'ega afifiina, ae o RESEARCH wafers e fa'aalia ai le mafiafia o le epi-layer o le 2-30 µm ma le doping fa'apitoa. O oloa uma e faʻamaonia e le X-ray diffraction (rocking curve <30 arcsec) ma Raman spectroscopy, faʻatasi ai ma suʻega eletise-Hall measurements, C-V profiling, ma micropipe scanning-faʻamautinoa le tausisia o le JEDEC ma le SEMI.
O pa'u e oo atu i le 150 mm le lautele o lo'o fa'atupuina e ala i le PVT ma le CVD fa'atasi ai ma va'aiga ta'ape i lalo ole 1×10³ cm⁻² ma maualalo le aofa'i ole paipa. O tioata fatu e tipiina i totonu ole 0.1° o le c-axis e faʻamautinoa ai le toe faʻaleleia o le tuputupu aʻe ma le maualuga o le seleselega.
E ala i le tu'ufa'atasia o le tele o polytypes, suiga o le doping, togi lelei, lapopo'a, ma le gaosiga i totonu o le fale ma fatu-ma'aisa, o lo tatou SiC substrate platform streamlines filifili sapalai ma fa'avavevaveina le atina'eina o masini mo ta'avale eletise, laina atamai, ma fa'aoga si'osi'omaga faigata.
Ata o siC wafer
6inch 4H-N type SiC wafer's pepa fa'amaumauga
| 6inch SiC wafers pepa fa'amaumauga | ||||
| Parameter | Laiti Parameter | Z Vasega | P Vasega | D Vasega |
| Diamita | 149.5–150.0 mm | 149.5–150.0 mm | 149.5–150.0 mm | |
| mafiafia | 4H‑N | 350 µm ± 15 µm | 350 µm ± 25 µm | 350 µm ± 25 µm |
| mafiafia | 4H‑SI | 500 µm ± 15 µm | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Fa'asinomaga ole Wafer | Tu'u ese: 4.0° agai i le <11-20> ±0.5° (4H-N); I luga ole axis: <0001> ±0.5° (4H-SI) | Tu'u ese: 4.0° agai i le <11-20> ±0.5° (4H-N); I luga ole axis: <0001> ±0.5° (4H-SI) | Tu'u ese: 4.0° agai i le <11-20> ±0.5° (4H-N); I luga ole axis: <0001> ±0.5° (4H-SI) | |
| Micropipe Density | 4H‑N | ≤ 0.2 cm⁻² | ≤ 2 cm⁻² | ≤ 15 cm⁻² |
| Micropipe Density | 4H‑SI | ≤ 1 cm⁻² | ≤ 5 cm⁻² | ≤ 15 cm⁻² |
| Tete'e | 4H‑N | 0.015–0.024 Ω·cm | 0.015–0.028 Ω·cm | 0.015–0.028 Ω·cm |
| Tete'e | 4H‑SI | ≥ 1×10¹⁰ Ω·cm | ≥ 1×10⁵ Ω·cm | |
| Primary Flat Orientation | [10-10] ± 5.0° | [10-10] ± 5.0° | [10-10] ± 5.0° | |
| Primary Flat Umi | 4H‑N | 47.5 mm ± 2.0 mm | ||
| Primary Flat Umi | 4H‑SI | Notch | ||
| Tuusaunoaga Tupito | 3 mm | |||
| Warp/LTV/TTV/Bow | ≤2.5 µm / ≤6 µm / ≤25 µm / ≤35 µm | ≤5 µm / ≤15 µm / ≤40 µm / ≤60 µm | ||
| Talatala | Polish | Ra ≤ 1 nm | ||
| Talatala | CMP | Ra ≤ 0.2 nm | Ra ≤ 0.5 nm | |
| Ta'eta'e pito | Leai | Umi fa'aputu ≤ 20 mm, tasi ≤ 2 mm | ||
| Papatusi Hex | Vaega fa'aopoopo ≤ 0.05% | Vaega fa'aopoopo ≤ 0.1% | Vaega fa'aopoopo ≤ 1% | |
| Polytype Areas | Leai | Vaega fa'aopoopo ≤ 3% | Vaega fa'aopoopo ≤ 3% | |
| Fa'aaofia Carbon | Vaega fa'aopoopo ≤ 0.05% | Vaega fa'aopoopo ≤ 3% | ||
| Mata'i Laufanua | Leai | Fa'aputuga umi ≤ 1 × fa'ameamea le lautele | ||
| Tipi Chips | Leai se faatagaina ≥ 0.2 mm lautele & loloto | E oʻo atu i le 7 meataalo, ≤ 1 mm taʻitasi | ||
| TSD (Ta'u'ese'ese le Siu fa'asolo) | ≤ 500 cm⁻² | N/A | ||
| BPD (Va'ega Fa'avae Va'alele) | ≤ 1000 cm⁻² | N/A | ||
| Fa'aleagaina i luga | Leai | |||
| afifiina | Kaseti fa'ama'i fa'atele po'o se atigipusa masimea ta'itasi | Kaseti fa'ama'i fa'atele po'o se atigipusa masimea ta'itasi | Kaseti fa'ama'i fa'atele po'o se atigipusa masimea ta'itasi | |
4inch 4H-N type SiC wafer's pepa fa'amaumauga
| 4insi SiC wafer's pepa fa'amaumauga | |||
| Parameter | Zero MPD Gaosiga | Vasega Gaosia Fa'ata'atia (Visi P) | Vasega Fa'ata (vaega D) |
| Diamita | 99.5 mm–100.0 mm | ||
| Mafiafia (4H-N) | 350 µm±15 µm | 350 µm±25 µm | |
| Mafiafia (4H-Si) | 500 µm±15 µm | 500 µm±25 µm | |
| Fa'asinomaga ole Wafer | Tu'u ese: 4.0° agai i le <1120> ± 0.5° mo 4H-N; I luga o le axis: <0001> ± 0.5 ° mo 4H-Si | ||
| Malosi'i paipa (4H-N) | ≤0.2 cm⁻² | ≤2 cm⁻² | ≤15 cm⁻² |
| Malosi ole paipa (4H-Si) | ≤1 cm⁻² | ≤5 cm⁻² | ≤15 cm⁻² |
| Tete'e (4H-N) | 0.015–0.024 Ω·cm | 0.015–0.028 Ω·cm | |
| Tete'e (4H-Si) | ≥1E10 Ω·cm | ≥1E5 Ω·cm | |
| Primary Flat Orientation | [10-10] ±5.0° | ||
| Primary Flat Umi | 32.5 mm ±2.0 mm | ||
| Lua Mafolafola Umi | 18.0 mm ±2.0 mm | ||
| Tulaga Lua mafolafola | Silisi fa'asaga i luga: 90° CW mai le tulaga maualuga ±5.0° | ||
| Tuusaunoaga Tupito | 3 mm | ||
| LTV/TTV/aufana | ≤2.5 µm/≤5 µm/≤15 µm/≤30 µm | ≤10 µm/≤15 µm/≤25 µm/≤40 µm | |
| Talatala | Polani Ra ≤1 nm; CMP Ra ≤0.2 nm | Ra ≤0.5 nm | |
| Ta'eta'e Tu'u I le Malamalama Maualuluga | Leai | Leai | Fa'aputuga umi ≤10 mm; umi tasi ≤2 mm |
| Papatusi Hex I Malamalama Maualuga Maualuga | Vaega fa'aopoopo ≤0.05% | Vaega fa'aopoopo ≤0.05% | Vaega fa'aopoopo ≤0.1% |
| Polytype Areas I le Malamalama Maualuga | Leai | Vaega fa'aopoopo ≤3% | |
| Vaaiga Carbon Inclusions | Vaega fa'aopoopo ≤0.05% | Vaega fa'aopoopo ≤3% | |
| Su'ega Sili Sili I luga o le Malamalama Maualuga | Leai | Le umi fa'aputu ≤1 le lautele o fafie | |
| Tipi Chips E Malamalama Malosi Maualuga | Leai se fa'atagaina ≥0.2 mm le lautele ma le loloto | 5 faatagaina, ≤1 mm taitasi | |
| Silicon Surface Contamination E le Malamalama Maualuga | Leai | ||
| Fa'ase'e fa'avili fa'a filo | ≤500 cm⁻² | N/A | |
| afifiina | Kaseti fa'ama'i fa'atele po'o se atigipusa masimea ta'itasi | Kaseti fa'ama'i fa'atele po'o se atigipusa masimea ta'itasi | Kaseti fa'ama'i fa'atele po'o se atigipusa masimea ta'itasi |
4inch HPSI type SiC wafer's data sheet
| 4inch HPSI type SiC wafer's data sheet | |||
| Parameter | Zero MPD Vasega Gaosia (Visi Z) | Vasega Gaosia Fa'ata'atia (Visi P) | Vasega Fa'ata (vaega D) |
| Diamita | 99.5–100.0 mm | ||
| Mafiafia (4H-Si) | 500 µm ±20 µm | 500 µm ±25 µm | |
| Fa'asinomaga ole Wafer | Tu'u ese: 4.0° agai i le <11-20> ±0.5° mo 4H-N; I luga o le axis: <0001> ± 0.5 ° mo 4H-Si | ||
| Malosi ole paipa (4H-Si) | ≤1 cm⁻² | ≤5 cm⁻² | ≤15 cm⁻² |
| Tete'e (4H-Si) | ≥1E9 Ω·cm | ≥1E5 Ω·cm | |
| Primary Flat Orientation | (10-10) ±5.0° | ||
| Primary Flat Umi | 32.5 mm ±2.0 mm | ||
| Lua Mafolafola Umi | 18.0 mm ±2.0 mm | ||
| Tulaga Lua mafolafola | Silisi fa'asaga i luga: 90° CW mai le tulaga maualuga ±5.0° | ||
| Tuusaunoaga Tupito | 3 mm | ||
| LTV/TTV/aufana | ≤3 µm/≤5 µm/≤15 µm/≤30 µm | ≤10 µm/≤15 µm/≤25 µm/≤40 µm | |
| Talatala (C foliga) | Polish | Ra ≤1 nm | |
| Talatala (Si foliga) | CMP | Ra ≤0.2 nm | Ra ≤0.5 nm |
| Ta'eta'e Tu'u I le Malamalama Maualuluga | Leai | Fa'aputuga umi ≤10 mm; umi tasi ≤2 mm | |
| Papatusi Hex I Malamalama Maualuga Maualuga | Vaega fa'aopoopo ≤0.05% | Vaega fa'aopoopo ≤0.05% | Vaega fa'aopoopo ≤0.1% |
| Polytype Areas I le Malamalama Maualuga | Leai | Vaega fa'aopoopo ≤3% | |
| Vaaiga Carbon Inclusions | Vaega fa'aopoopo ≤0.05% | Vaega fa'aopoopo ≤3% | |
| Su'ega Sili Sili I luga o le Malamalama Maualuga | Leai | Le umi fa'aputu ≤1 le lautele o fafie | |
| Tipi Chips E Malamalama Malosi Maualuga | Leai se fa'atagaina ≥0.2 mm le lautele ma le loloto | 5 faatagaina, ≤1 mm taitasi | |
| Silicon Surface Contamination E le Malamalama Maualuga | Leai | Leai | |
| Fa'a'ese'ese le fa'ai'u o filo | ≤500 cm⁻² | N/A | |
| afifiina | Kaseti fa'ama'i fa'atele po'o se atigipusa masimea ta'itasi | ||
Taimi meli: Iuni-30-2025