Mai le taʻiala galue o LED, e faʻamaonia ai o le epitaxial wafer material o le vaega autu lea o le LED. O le mea moni, o mea taua optoelectronic e pei o le galu, susulu, ma le eletise i luma e tele lava ina fuafuaina e le mea epitaxial. Epitaxial wafer technology ma meafaigaluega e taua tele i le gaosiga o le gaosiga, faʻatasi ai ma Metal-Organic Chemical Vapor Deposition (MOCVD) o le auala muamua lea mo le faʻatupuina o faʻamaʻi manifinifi tasi-kristal o III-V, II-VI faʻapipiʻi, ma a latou uʻamea. O loʻo i lalo nisi o aga i le lumanaʻi i le LED epitaxial wafer technology.
1. Fa'aleleia atili ole Fa'agasologa o Laasaga Lua
I le taimi nei, o le gaosiga faʻapisinisi e faʻaaogaina se faʻagasologa e lua-laasaga, ae o le numera o substrates e mafai ona utaina i le taimi e tasi e faʻatapulaʻaina. E ui ina matua 6-wafer system, o masini e fa'aogaina le 20 wafers o lo'o fa'aauau pea ona atina'e. O le faʻateleina o le numera o wafers e masani ona taʻitaʻia ai le le lava o le tutusa i le epitaxial layers. O atina'e i le lumana'i o le a taula'i i itu e lua:
- Atina'eina o tekinolosi e mafai ai ona fa'auluina le tele o mea'ai i totonu o se potu tali e tasi, ma fa'afaigofie ai mo le gaosiga tele ma le fa'aitiitia o tau.
- Si'itia mea fa'a-otometi, toe fa'aaogaina tasi-wafer.
2. Fa'agata Fa'asao Fa'asao Epitaxy (HVPE) Tekinolosi
O lenei tekinolosi e mafai ai ona faʻavavevave le tuputupu aʻe o ata mafiafia ma le maualalo o le dislocation density, lea e mafai ona avea ma substrate mo le tuputupu aʻe o le homoepitaxial e faʻaaoga ai isi metotia. E le gata i lea, o ata GaN e vavae ese mai le mea'ai e mafai ona avea ma isi mea i le tele o GaN meata tioata tasi. Ae ui i lea, o le HVPE o loʻo i ai faʻafitauli, e pei o le faigata i le pulea saʻo o le mafiafia ma kasa faʻafefe e faʻalavelave ai le faʻaleleia atili o le GaN mama.
Si-doped HVPE-GaN
(a) Fa'atulagaga o le fa'a'a'amea HVPE-GaN Si-doped; (b) Ata o le 800 μm- mafiafia Si-doped HVPE-GaN;
(c) Tufatufaina o le ave fua fua i luga o le lautele o le Si-doped HVPE-GaN
3. Filifilia Epitaxial Growth poʻo Lateral Epitaxial Growth Tekinolosi
O lenei metotia e mafai ona faʻaitiitia ai le mamafa o le dislocation ma faʻaleleia le tulaga tioata o GaN epitaxial layers. O le faagasologa e aofia ai:
- Fa'aputuina ose gaN i luga o se mea'ai talafeagai (safaira po'o le SiC).
- Tu'u se fa'aafi ufimata polycrystalline SiO₂ i luga.
- Fa'aaogā ata fa'ata'ita'i ma togitogi e fai ai fa'amalama GaN ma SiO₂ fasi ufimata.I le taimi o le tuputupu aʻe mulimuli ane, e muamua ona tupu saʻo le GaN i faʻamalama ona sosoo ai lea ma luga o le SiO₂ fasi pepa.
XKH's GaN-on-Sapphire wafer
4. Tekonolosi Pendeo-Epitaxy
O lenei metotia e matua fa'aitiitia ai le faaletonu o le lattice e mafua mai i le lattice ma le vevela le fetaui i le va o le substrate ma le epitaxial layer, faʻaleleia atili le tulaga tioata GaN. O laasaga e aofia ai:
- Fa'atupuina o le gaN epitaxial layer i luga o se mea fa'aoga talafeagai (6H-SiC po'o Si) e fa'aaoga ai se faiga e lua-laasaga.
- Fa'atinoina o le togiina filifilia o le epitaxial layer i lalo i le mea'ai, fa'atupuina suitulaga pou (GaN/buffer/substrate) ma fausaga lua.
- Fa'atupula'ia fa'aputuga GaN fa'aopoopo, e fa'asolo atu i tua mai puipui o le ulua'i pou GaN, fa'amau i luga o alavai.Talu ai e leai se matapulepule e faʻaaogaina, e aloese mai le faʻafesoʻotaʻi i le va o GaN ma mea faʻapipiʻi.
XKH's GaN-on-Silicon wafer
5. Atinaʻeina o mea epitaxial UV LED Puupuu-Umi
O lenei mea e tu'uina ai se fa'avae mautu mo UV-excited phosphor-based LEDs papa'e. O le tele o phosphors maualuga e mafai ona faʻafiafiaina e le malamalama o le UV, e ofoina atu le maualuga o le malamalama nai lo le YAG:Ce system o loʻo i ai nei, ma faʻateleina ai le faʻatinoga o le LED paʻepaʻe.
6. Multi-Quantum Well (MQW) Chip Technology
I totonu o fausaga MQW, o mea leaga eseese e faʻapipiʻiina i le taimi o le tuputupu aʻe o le faʻamalama faʻamalama e fausia ai ni vaieli eseese. O le toe tu'ufa'atasia o photon e fa'aulu mai i nei vaieli e maua sa'o mai ai le malamalama pa'epa'e. O lenei metotia e faʻaleleia ai le faʻamalamalamaga lelei, faʻaitiitia tau, ma faʻafaigofie le afifiina ma le faʻatonutonuina o le matagaluega, e ui lava e maua ai ni luʻitau faʻapitoa.
7. Atina'e ole "Photon Recycling" Tekinolosi
Ia Ianuari 1999, na fausia ai e le Iapani Sumitomo se LED paʻepaʻe e faʻaaoga ai mea ZnSe. O le tekonolosi e aofia ai le fa'atupuina o se ata manifinifi CdZnSe i luga o se mea fa'ama'i tioata tasi ZnSe. A fa'a eletise, e fa'auluina e le ata le moli lanumoana, lea e fegalegaleai ma le ZnSe substrate e maua ai le malamalama samasama felagolagomai, e maua ai le malamalama pa'epa'e. E fa'apena fo'i, na fa'aputuina e le Boston University's Photonics Research Center se AlInGaP semiconductor compound i luga o le GaN-LED lanumoana e fa'atupu ai le malamalama pa'epa'e.
8. LED Epitaxial Wafer Fa'agasologa Fa'agasologa
① Epitaxial Wafer Fabrikasi:
Fa'avae → Fuafuaga fa'apena → Fa'atupula'ia le fa'aputuga o le fa'aputuga → Fa'atupula'ia o le lapisi N-ituaiga GaN → Fa'atupuina fa'aulu fa'amalama MQW → Fa'atupula'ia o le lapisi P-ituaiga GaN → Su'ega → Su'ega (photoluminescence, X-ray) → Epitaxial wafer
② Fausia Chip:
Epitaxial wafer → Mask design and fabrication → Photolithography → Ion etching → N-type electrode (deposition, annealing, etching) → P-type electrode (deposition, annealing, etching) → Dicing → Chip asiasiga ma le togiina.
ZMSH's GaN-on-SiC wafer
Taimi meli: Iul-25-2025