SiC Ceramic Tray End Effector Wafer Handling Measure-Made
SiC Ceramic & Alumina Ceramic Custom Components Puʻupuʻu
Silicon Carbide (SiC) Vaega Fa'aleaganu'u Ceramic
Silicon Carbide (SiC) vaega fa'aleaganu'u fa'aleaganu'u, o mea fa'ameamea fa'apisinisi e maualuga le fa'atinoga e ta'uta'ua mo latou.matua'i maualuga ma'a'a, lelei fa'amautu fa'avevela, fa'alavelave fa'a'ele'ele'ele'ele, ma maualuga fa'avevela vevela. Silicon Carbide (SiC) vaega fa'aleaganu'u sima e mafai ai ona fa'amautu le fa'amautu i totonusi'osi'omaga maualuga-vevela a'o tete'e atu i le tafia mai mea malolosi, alkalis, ma uamea liusuavai. SiC ceramics e gaosia e ala i faiga e pei olesintering e leai se mamafa, sintering tali, po'o le sintering vevelama e mafai ona fa'avasegaina i foliga lavelave, e aofia ai mama fa'amaufa'ailoga fa'ainisinia, lima lima, pusi, fa'aauumu fa'aumu, va'a mama, ma ipu fa'alava fa'alavalava.
Alumina Ceramic Custom Components
Alumina (Al₂O₃) vaega fa'aleaganu'u sima fa'amamafafa'a'ese'ese maualuga, malosi fa'ainisinia lelei, ma le fa'alavalava fa'a. Fa'avasegaina i togi mama (fa'ata'ita'iga, 95%, 99%), Alumina (Al₂O₃) vaega fa'aleaganu'u sima fa'atasi ai ma masini fa'apitoa e mafai ai ona fa'aogaina i totonu o insulators, bearings, meafaigaluega tipi, ma mea fa'afoma'i. Alumina ceramics e masani ona gaosia e ala ilolomi mago, tui tui, poʻo faiga faʻapipiʻi isostatic, fa'atasi ai ma luga e mafai ona fa'aiila i se fa'a fa'auma.
XKH faʻapitoa i le R & D ma le gaosiga masani osilicon carbide (SiC) ma alumina (Al₂O₃) ceramics. O oloa siC SiC e taulaʻi atu i siosiomaga vevela, maualuga-ofu, ma pala, e aofia ai faʻaoga semiconductor (faʻataʻitaʻiga, vaʻa wafer, foe faʻalava, faʻaumu ogaumu) faʻapea foʻi ma vaega vevela ma faʻamaufaʻailoga maualuga mo vaega fou o le malosi. Alumina ceramic oloa faʻamamafaina le faʻamavaeina, faʻamaufaʻailogaina, ma mea faʻapitoa faʻapitoa, e aofia ai mea faʻaeletoroni, mama faʻamaufaʻailoga masini, ma mea faʻafomaʻi. Fa'aaogaina o tekonolosi e pei ololomi isostatic, sintering leai se malosi, ma masini sa'o, matou te tuʻuina atu fofo faʻapitoa faʻapitoa mo alamanuia e aofia ai semiconductors, photovoltaics, aerospace, fomaʻi, ma vailaʻau faʻasolosolo, faʻamautinoaina o vaega e fetaui ma manaʻoga mo le saʻo, umi, ma le faʻamaoni i tulaga ogaoga.
SiC Ceramic Functional Chucks & CMP Grinding Discs Folasaga
SiC Ceramic Vacuum Chucks
Silicon Carbide (SiC) Ceramic Vacuum Chucks o mea faigaluega faʻapipiʻi saʻo maualuga e gaosia mai le silicon carbide (SiC) mea sima. Ua mamanuina faapitoa mo talosaga e manaomia ai le mama tele ma le mautu, e pei o semiconductor, photovoltaic, ma sa'o gaosiga alamanuia. O latou itu lelei autu e aofia ai: o se faʻata faʻataʻitaʻiga faʻalelei luga (mafolafola e pulea i totonu o le 0.3-0.5 μm), ultra-high stiffness and low coefficient of thermal expansion (faʻamautinoa le nano-level shape ma le tulaga mautu), o se fausaga mama tele (faʻaitiitia le faʻaogaina o le inertia), ma le faʻaitiitia o le faʻaogaina o le gaioo. sili atu i le umi o le ola o u'amea u'amea). O nei meatotino e mafai ai ona faʻagaioia le faʻaogaina i totonu o siʻosiʻomaga e fesuiaʻi ai le maualuga ma le maualalo o le vevela, malosi malosi, ma le televave o le taulimaina, faʻaleleia atili le gaosiga o gaosiga ma le gaosiga lelei mo vaega saʻo e pei o wafers ma elemene opitika.
Silicon Carbide (SiC) Bump Vacuum Chuck mo Metrology ma Asiasiga
Fuafuaina mo suʻesuʻega faʻaletonu o le wafer, o lenei meafaigaluega faʻapipiʻi saʻo maualuga e gaosia mai le silicon carbide (SiC) mea keramika. O lona fausaga fa'apitoa fa'apipi'i e maua ai le malosi o le fa'apa'u o le gaogao a'o fa'aitiitia le vaega fa'afeso'ota'i ma le wafer, ma puipuia ai le fa'aleagaina po'o le fa'aleagaina i luga o le wafer ma fa'amautinoa le mautu ma le sa'o i le taimi o asiasiga. O le chuck e faʻaalia ai le mafolafola tulaga ese (0.3-0.5 μm) ma se faʻata-faʻaiila luga, tuʻufaʻatasia ma le mamafa tele-mama ma le faʻamaʻa maualuga e mautinoa ai le mautu i le taimi o le saoasaoa maualuga. O lona tulaga maualalo maualalo o le faʻalauteleina o le vevela e faʻamaonia ai le mautu o le fua i lalo o fesuiaiga o le vevela, ae o le faʻaogaina o laei e faʻalauteleina ai le ola tautua. E lagolagoina e le oloa le faʻatulagaina i le 6, 8, ma le 12-inisi faʻamatalaga e faʻafetaui ai manaʻoga asiasiga o lapopoa eseese.
Flip Chip Bonding Chuck
O le pusi fa'apipi'i fa'apipi'i ose vaega 'autu i faiga fa'apipi'i chip flip-chip, ua fa'ata'atia fa'apitoa mo le fa'apipi'i sa'o o fa'ama'i e fa'amautinoa ai le mautu i taimi o fa'agaioiga fa'apipi'i saosaoa ma maualuga. O loʻo faʻaalia ai se faʻata faʻapolopolo (faʻamafola / paralelism ≤1 μm) ma le saʻo saʻo ala kasa e maua ai le faʻaogaina o le faʻaogaina o le gaogao, e puipuia ai le faʻafefe poʻo le faʻaleagaina. O lona malosi maualuga ma le maualuga-maualalo o le faʻalauteleina o le vevela (latalata i mea faʻapipiʻi) faʻamautinoa le mautu i totonu o siosiomaga faʻapipiʻi maualuga, ae o mea maualuga (eg, silicon carbide poʻo ceramics faʻapitoa) e puipuia lelei le faʻaogaina o le kesi, faʻatumauina le faʻatuatuaina o le gaogao umi. O nei uiga o lo'o lagolagoina fa'atasi le sa'o atoatoa o le fa'apipi'iina o le micron ma fa'aleleia atili ai le fa'aputuina o atigipusa.
SiC Bonding Chuck
O le silicon carbide (SiC) fusipaʻu chuck o se mea faʻapipiʻi autu i faiga faʻapipiʻi puʻupuʻu, faʻapitoa mo le faʻapipiʻiina ma le faʻamautinoaina o mea faʻapipiʻi, faʻamautinoa le faʻatinoina o le maualuga i lalo o le vevela ma le maualuga o le mamafa. Fausia mai le silicon carbide ceramic (porosity <0.1%), e maua ai le tufatufaina atu o le malosi o le adsorption (se'ese'ese <5%) e ala i le faʻata o le nanometer-level polesi (faʻamataʻu luga Ra <0.1 μm) ma le saʻo ala kasa alalaupapa (pore diameter: 5-50 μm faʻaleagaina) O lona maualuga-maualalo o le faʻalauteleina o le vevela (4.5 × 10⁻⁶/℃) e fetaui lelei ma faʻamaʻi faʻamaʻi silikoni, faʻaitiitia ai le faʻalavelave faʻafefe faʻafefe. Faʻatasi ma le faʻamaʻa maualuga (modula elastic> 400 GPa) ma le ≤1 μm mafolafola / paralelism, e faʻamaonia le saʻo o le faʻaogaina o fusi. Fa'aaoga lautele i le fa'apipi'iina o le semiconductor, fa'aputu 3D, ma le tu'ufa'atasia o Chiplet, e lagolagoina ai le fa'aogaina o le gaosiga maualuga e mana'omia ai le sa'o o le nanoscale ma le mautu o le vevela.
CMP oloina tisiki
O le CMP grinding disc o se vaega autu o masini faʻapolopolo masini (CMP), faʻapitoa e faʻapipiʻiina ma faʻamautu faʻamaufaʻailoga i le taimi o le polesi maualuga, faʻatagaina le nanometer-level global planarization. Fausia mai mea malō, malō (fa'ata'ita'iga, silicon carbide ceramics poʻo mea faʻapitoa), e faʻamautinoaina le faʻaogaina o le gaogao e ala i le faʻaogaina lelei o alalaupapa kesi. O lona fa'ailo fa'aata (mafolafola/parallelism ≤3 μm) fa'amautinoa le fa'afeso'ota'i e aunoa ma se fa'alavelave ma fa'ama'i, a'o le fa'amaualalo-maualalo o le fa'alauteleina o le vevela (fa'afetaui i le silikoni) ma ala malulu i totonu e fa'amalieina le fa'aleagaina o le vevela. E fetaui ma le 12-inisi (750 mm le lautele) wafers, o le tisiketi e faʻaogaina le faʻaogaina o tekonolosi e faʻamautinoa ai le tuʻufaʻatasia lelei ma le faʻatuatuaina umi o fausaga faʻapipiʻi i lalo o le maualuga o le vevela ma le mamafa, faʻaleleia atili le faʻagasologa o le CMP ma fua.
Fa'asinomaga eseese SiC Ceramics Vaega Folasaga
Silicon Carbide (SiC) Square Fa'ata
Silicon Carbide (SiC) Square Mirror o se mea mata'utia maualuga sa'o o lo'o gaosia mai le silicon carbide ceramic, fa'apitoa mo mea gaosi semiconductor maualuga e pei o masini lithography. E maua ai le mamafa tele ma le maaa (elastic modulus>400 GPa) e ala i le faʻaogaina o le fausaga mama (faʻataʻitaʻiga, pito i tua o le honeycomb hollowing), ae o lona faʻalauteleina o le vevela (≈4.5 × 10⁻⁶/℃) faʻamautinoaina le mautu o le vevela. O le faʻata faʻata, pe a maeʻa le faʻamaʻi lelei, e maua le ≤1 μm mafolafola / tutusa, ma o lona faʻaogaina faʻapitoa (Mohs hardness 9.5) faʻalauteleina le ola tautua. E fa'aaogaina lautele i fale faigaluega o masini lithography, fa'ata leisa, ma va'ava'ai vateatea lea e taua tele ai le sa'o maualuga ma le mautu.
Silicon Carbide (SiC) Taiala Fa'alele
Silicon Carbide (SiC) Air Floatation Guides e fa'aogaina le tekonolosi fa'aola e le fa'afeso'ota'i, lea e fa'atupu ai le kasa fa'apipi'i se ata ea micron-level (e masani lava 3-20μm) e maua ai le gaio'iga lamolemole ma leai se vibration. Latou te ofoina atu le saʻo o le gaioiga nanometric (saʻo saʻo faʻatulagaina e oʻo atu i le ± 75nm) ma le faʻataʻitaʻiga faʻataʻitaʻi i lalo-micron (saʻo ± 0.1-0.5μm, mafolafola ≤1μm), faʻatagaina e ala i le faʻaogaina o tali faʻapipiʻi faʻatasi ma fua faʻamau saʻo poʻo le laser interferometers. O le silicon carbide ceramic material (filifiliga e aofia ai le Coresic® SP/Marvel Sic series) e maua ai le ultra-high stiffness (elastic modulus>400 GPa), ultra-low thermal expansion coefficient (4.0–4.5×10⁻⁶/K, matching silicon) , ma le porosity density <1%. O lona mamanu mama (density 3.1g/cm³, lona lua i le alumini) e faʻaitiitia ai le gaioiina o le gaioiina, ae faʻapitoa le faʻaogaina o le ofuina (Mohs hardness 9.5) ma le vevela faʻamautu e faʻamautinoa ai le faʻatuatuaina umi i lalo ole saosaoa maualuga (1m/s) ma tulaga maualuga-vave (4G). O nei taʻiala o loʻo faʻaaogaina lautele i le semiconductor lithography, suʻesuʻega wafer, ma masini ultra-saʻo.
Silicon Carbide (SiC) Cross-Beams
Silicon Carbide (SiC) Cross-Beams o vaega autu ia o gaioiga ua mamanuina mo masini semiconductor ma mea tau alamanuia maualuga, e masani ona galue e ave ni laasaga ma taʻitaʻia i latou i ala faʻapitoa mo le saoasaoa maualuga, ultra-saʻo le gaioiga. O le faʻaaogaina o le silicon carbide ceramic (filifiliga e aofia ai Coresic® SP poʻo le Marvel Sic series) ma le mamanu faʻavae mama, latou te ausia le mamafa o le mama ma le malosi maualuga (modula elastic> 400 GPa), faʻatasi ai ma le maualuga maualalo o le faʻalauteleina o le vevela (≈4.5 × 10⁰∂) <0.1%), fa'amautinoa le mautu o le nanometric (fa'ato'a/paralelism ≤1μm) i lalo ole fa'avevela ma fa'ainisinia. O latou meatotino tu'ufa'atasi e lagolagoina ai le saosaoa ma le fa'avavevave fa'agaioiga (fa'ata'ita'iga, 1m/s, 4G), fa'aigoa lelei mo masini lithography, masini su'esu'e wafer, ma le gaosiga sa'o, fa'aleleia atili le sa'o o le gaio'i ma le malosi o le tali atu.
Silicon Carbide (SiC) Vaega Fa'agaioiga
Silicon Carbide (SiC) Motion Components o vaega taua ia ua fuafuaina mo le maualuga-saʻo semiconductor motion system, faʻaaogaina mea maualuga-density SiC mea (faʻataʻitaʻiga, Coresic® SP poʻo Marvel Sic series, porosity <0.1%) ma le mamanu faʻatulagaina mama e ausia ai le mamafa mama ma le malosi maualuga (elastic modulus>400). Faʻatasi ai ma se faʻamaualalo maualalo o le faʻalauteleina o le vevela (≈4.5 × 10⁻⁶ / ℃), latou te faʻamautinoa le mautu o le nanometric (flatness/parallelism ≤1μm) i lalo ole fesuiaiga ole vevela. O nei meatotino tu'ufa'atasi e lagolagoina ai le saosaoa ma le televave o gaioiga (fa'ata'ita'iga, 1m/s, 4G), fa'apena lelei mo masini lithography, masini su'esu'e wafer, ma le sa'o sa'o o le gaosiga, fa'aleleia atili ai le sa'o o le gaio ma le malosi o le tali atu.
Silicon Carbide (SiC) Osiata Ala Papatusi
Ole Silicon Carbide (SiC) Optical Path Plate ose fa'avae autu fa'avae ua fa'atulagaina mo faiga lua-optic-auala i masini su'esu'e wafer. O lo'o gaosia mai le silicon carbide ceramic, e maua ai le ultra-mama (density ≈3.1 g/cm³) ma le stiffness (elastic modulus >400 GPa) e ala i le mamanu mama, a'o fa'aalia ai le ultra-low coefficient (≈1≁⁉≈ fa'alauteleina) ma le maualuga maualuga (porosity <0.1%), fa'amautinoa le mautu o le nanometric (fa'ato'a/paralelism ≤0.02mm) i lalo ole vevela ma fa'ainisinia fesuiaiga. Faʻatasi ai ma lona maualuga maualuga (900 × 900mm) ma faʻapitoa faʻatinoga faʻapitoa, e maua ai se faʻamaufaʻailoga tumau tumau mo faiga faʻapipiʻi, faʻaleleia atili le saʻo ma le faʻamaoni o asiasiga. E masani ona faʻaaogaina i le semiconductor metrology, faʻaogaina opitika, ma faiga faʻataʻitaʻiga maualuga.
graphite + Tantalum Carbide ua ufiufi Taiala Mama
O le Graphite + Tantalum Carbide Coated Guide Ring o se vaega taua tele ua fuafuaina mo masini faʻatupu tioata tioata tasi (SiC). O lana galuega autu o le faʻatonu saʻo o le maualuga o le vevela o le kasa, faʻamautinoa le tutusa ma le mautu o le vevela ma le tafe i totonu o le potu tali. O lo'o gaosia mai le fa'apalapala o le graphite maualuga (mama> 99.99%) fa'apipi'iina i le tantalum carbide (TaC) fa'apipi'i CVD (fa'apipi'i mea le mama <5 ppm), o lo'o fa'aalia ai le fa'aogaina o le vevela (≈120 W/m·K) ma le vevela vevela i lalo o le maualuga. 2200°C), puipuia lelei le faaleagaina o le ausa o le silikoni ma le taofiofia o le faasalalauina o le eleelea. O le maualuga maualuga o le faʻaogaina o le faʻapipiʻi (fesoʻotaʻiga <3%, faʻasalalauga atoa) e faʻamautinoa ai le taʻitaʻiga faifaipea o le kesi ma le faʻatuatuaina o le tautua mo se taimi umi, faʻaleleia atili le lelei ma le gaosiga o le tuputupu aʻe tioata tasi SiC.
Silicon Carbide (SiC) ogaumu Pu'upu'u Pu'upu'u
Silicon Carbide (SiC) Fa'apa'u Ogaumu Tusa'o
Silicon Carbide (SiC) Vertical Furnace Tube o se vaega taua ua fuafuaina mo meafaigaluega tau alamanuia maualuga, e masani ona avea o se paipa puipui fafo e faʻamautinoa ai le tufatufaina atu o le vevela i totonu o le ogaumu i lalo o le ea, ma le vevela masani e tusa ma le 1200 ° C. O lo'o gaosia e ala ile 3D lomitusi tu'ufa'atasia fa'atekonolosi, o lo'o fa'aalia ai se mea fa'avae le mama i totonu <300 ppm, ma e mafai ona fa'apipi'i fa'apipi'i ile CVD silicon carbide coating (fa'apalapala le mama <5 ppm). O le tu'ufa'atasia o le maualuga o le vevela (≈20 W/m·K) ma le fa'alavelave fa'afuase'i fa'ate'ia (tete'e fa'alili vevela> 800°C), e fa'aaogaina lautele i faiga vevela e pei o le vevela semiconductor, fa'amea photovoltaic sintering, ma le sa'o lelei o le gaosiga o le sima, fa'aleleia atili le fa'aogaina o le vevela ma le umi o meafaigaluega.
Silicon Carbide (SiC) Fa'apa'u Ogaumu Fa'asaga
O le Silicon Carbide (SiC) Horizontal Furnace Tube o se vaega autu ua fuafuaina mo le maualuga o le vevela, e avea o se paipa faʻagaioia o loʻo faʻaogaina i luga o le ea o loʻo i ai le okesene (kesi faʻafefe), nitrogen (kasa puipuia), ma le suʻeina o le hydrogen chloride, faʻatasi ai ma le vevela masani e tusa ma le 1250°C. O lo'o gaosia e ala ile 3D lomitusi tu'ufa'atasia fa'atekonolosi, o lo'o fa'aalia ai se mea fa'avae le mama i totonu <300 ppm, ma e mafai ona fa'apipi'i fa'apipi'i ile CVD silicon carbide coating (fa'apalapala le mama <5 ppm). O le tuʻufaʻatasia o le maualuga o le vevela (≈20 W / m · K) ma le faʻalavelave faʻafuaseʻi o le vevela (tetee o le vevela gradients> 800 ° C), e lelei mo le manaʻomia o semiconductor faʻaoga e pei o le faʻamaʻiina, faʻasalalau, ma le faʻapipiʻiina o ata manifinifi, faʻamautinoaina le faʻamaoni o le fausaga, le mama o le siosiomaga, ma le tumau umi o le vevela.
SiC Ceramic Fork Arms Folasaga
Gaosiga Semiconductor
I le gaosiga o le semiconductor wafer, o le SiC ceramic fork arms e masani ona faʻaaogaina mo le fesiitaiga ma le faʻatulagaina o wafers, e masani ona maua i:
- Meafaigaluega Fa'agogoina Wafer: E pei o kaseti wafer ma va'a fa'agaoioiga, lea e fa'agaoioia lelei i totonu o le vevela ma le fa'aleagaina o si'osi'omaga.
- Masini Lithography: Faʻaaogaina i vaega saʻo e pei o laasaga, taʻiala, ma lima robotic, lea o lo latou malosi maualuga ma le maualalo o le vevela e faʻamautinoa ai le saʻo o le nanometer-level.
- Fa'asologa o Fa'asologa ma Fa'asalalauga: Auauna atu ICP etching fata ma vaega mo faiga fa'asalalau semiconductor, o lo latou mama maualuga ma le fa'afefeteina e puipuia ai le fa'aleagaina i totonu o potu fa'agasolo.
Alamanuia Automation ma Robotics
SiC ceramic fork arms o vaega taua ia i le maualuga o galuega faʻapolopolo fale gaosi oloa ma masini faʻaogaina:
- Robotic End Effectors: Faʻaaogaina mo le faʻaogaina, faʻapipiʻi, ma faʻaoga saʻo. O latou mea mama mama (density ~ 3.21 g / cm³) faʻaleleia le saoasaoa o le robot ma le lelei, ae o lo latou malosi maualuga (Vickers hardness ~ 2500) faʻamautinoaina le faʻaogaina o le ofuina.
- Laina Otometi Gaosi Mea: I fa'ata'ita'iga e mana'omia ai le maualuga-telefoni, fa'aa'oa'oga lelei (fa'ata'ita'iga, faleteuoloa e-pisinisi, fale teuoloa), SiC tui fa'amaumau lima fa'atino tumau tumau.
Aerospace ma Malosiaga Fou
I si'osi'omaga mata'utia, e fa'aogaina e lima tui siC SiC lo latou tete'e atu i le vevela, fa'a'a'a'a, ma le fa'ate'ia o le vevela:
- Aerospace: Faʻaaogaina i vaega taua o vaʻa vaʻavaʻa ma drones, lea e fesoasoani ai a latou mea mama ma maualuga le malosi e faʻaitiitia ai le mamafa ma faʻaleleia le faʻatinoga.
- Malosiaga Fou: Fa'aogaina i masini gaosiga mo le alamanuia photovoltaic (fa'ata'ita'iga, ogaumu fa'asalalau) ma fa'apolopolo sa'o vaega i le gaosiga o maa lithium-ion.
Fa'agaioiga Alamanuia Maualuga-Sua
O lima tui siC SiC e mafai ona tatalia le vevela e sili atu i le 1600°C, ma talafeagai ai mo:
- Metallurgy, Ceramics, and Glass Industries: Faʻaaogaina i le maualuga o le vevela manipulators, setter plates, ma tulei plates.
- Malosiaga Faaniukilia: Ona o lo latou tetee atu i le radiation, e talafeagai mo nisi vaega i reactors faaniukilia.
Meafaigaluega Fomai
I totonu o le falemaʻi, o le SiC ceramic fork arms e faʻaaoga muamua mo:
- Robots Fa'afoma'i ma Mea Fa'apitoa: Fa'atauaina mo lo latou biocompatibility, tete'e o le pala, ma le mautu i si'osi'omaga fa'amama.
SiC Coating Overview
| O meatotino masani | Iunite | Tulaga taua |
| Fauga |
| FCC β vaega |
| Fa'atonuga | Vaega ninii (%) | 111 sili |
| Fa'atosina tele | g/cm³ | 3.21 |
| Malosi | Vickers maaa | 2500 |
| Malosiaga vevela | J·kg-1 ·K-1 | 640 |
| Fa'alautelega vevela 100–600 °C (212–1112 °F) | 10-6K-1 | 4.5 |
| Young's Modulus | Gpa (4pt pi'o, 1300℃) | 430 |
| Tele o Saito | μm | 2~10 |
| Sulimation Temperature | ℃ | 2700 |
| Malosi Felexural | MPa (RT 4-point) | 415 |
| Fa'avevela vevela | (W/mK) | 300 |
Silicon Carbide Ceramic Structural Parts Overview
Silicon carbide sima fausaga vaega e maua mai le silicon carbide particles fusi faatasi e ala i sintering. O loʻo faʻaaogaina lautele i le taʻavale, masini, vailaʻau, semiconductor, tekonolosi avanoa, microelectronics, ma vaega malosi, e taʻalo ai se sao taua i faʻaoga eseese i totonu o nei pisinisi. Ona o latou meatotino tulaga ese, silicon carbide ceramic structural parts ua avea ma mea lelei mo tulaga faigata e aofia ai le maualuga o le vevela, maualuga o le mamafa, pala, ma le ofuina, faʻaalia le faʻatuatuaina o le faʻatinoga ma le umi o le ola i le luʻitau o siosiomaga faʻaogaina.SiC Seal Parts Overview
O faʻamaufaʻailoga SiC o se filifiliga lelei mo siʻosiʻomaga faigata (e pei o le maualuga o le vevela, maualuga o le mamafa, faʻasalalau faʻasalalau, ma le televave o laʻei) ona o lo latou tulaga maʻaʻa, faʻaofuofu teteʻe, faʻamaualuga maualuga (tatalia le vevela e oʻo atu i le 1600 ° C poʻo le 2000 ° C), ma le faʻafefeteina. O le maualuga o le vevela e fa'afaigofie ai le fa'amama lelei o le vevela, ae o lo latou maualalo o le fete'ena'iga ma mea e fa'amama ai le tagata lava ia e fa'amautinoa atili ai le fa'amaufa'ailogaina ma le umi o le tautua i lalo o tulaga fa'agaoioia. O nei uiga e faʻaogaina ai faʻamaufaʻailoga SiC faʻaaoga lautele i alamanuia e pei o petrochemicals, mining, semiconductor manufacturing, otaota otaota, ma le malosi, faʻaitiitia ai le tau o le tausiga, faʻaitiitia taimi faʻaletonu, ma le faʻaleleia atili o meafaigaluega ma le saogalemu.
SiC Papatusi Ceramic Puupuu
Silicon Carbide (SiC) ceramic plates e taʻutaʻua i lo latou maʻaʻa ese (Mohs maaa e oʻo atu i le 9.5, lona lua i taimane), mataʻina le faʻafefeteina o le vevela (e sili atu nai lo le tele o ceramics mo le pulea lelei o le vevela), ma le mataʻina o vailaʻau maʻaleʻale ma le faʻateʻia o le vevela (tatalia le malosi o le vevela, alkalis, ma le malosi). O nei meatotino e faʻamautinoa ai le faʻamautuina o le faʻatulagaina ma le faʻatuatuaina o le faʻatinoga i siosiomaga ogaoga (faʻataʻitaʻiga, maualuga le vevela, abrasion, ma le pala), aʻo faʻalauteleina le ola tautua ma faʻaitiitia manaʻoga tausiga.
SiC ceramic plates e faʻaaogaina lautele i fanua maualuga:
• Meafaigaluega fa'ameamea: Fa'aaogāina le maaa tele mo le gaosiga o uili olo ma mea e fa'aiila ai, fa'aleleia atili le sa'o ma le tumau i si'osi'omaga fa'asa.
• Mea Fa'asa'o: Auauna e fai ma fa'alava o le ogaumu ma vaega o le umu, fa'atumauina le mautu i luga a'e o le 1600°C e fa'aleleia atili ai le fa'amama ma fa'aitiitia tau o le tausiga.
• Alamanuia Semiconductor: Galue e fai ma sui mo masini eletonika maualuga (fa'ata'ita'iga, power diodes ma RF amplifiers), lagolagoina le maualuga-voltage ma le maualuga o le vevela gaioiga e faʻaleleia ai le faʻalagolago ma le malosi o le malosi.
• Fa'ali'i ma fa'ameamea: Suia mea fa'aleaganu'u ile fa'agaioiga u'amea ina ia fa'amautinoa lelei le fe'avea'i o le vevela ma le fa'a'ele'ele o vaila'au, fa'aleleia atili le lelei ole u'amea ma le taugofie.
SiC Wafer Boat Abstract
O vaʻa sima XKH SiC e tuʻuina atu le faʻamautu maualuga o le vevela, vailaʻau inertness, faʻainisinia saʻo, ma le faʻaleleia o le tamaoaiga, e maua ai se fofo maualuga mo le gaosiga o semiconductor. Latou te faʻaleleia atili le saogalemu o le tagofiaina o wafer, mama, ma le lelei o le gaosiga, ma avea ai i latou ma vaega taua i le gaosiga o meaʻai.
SiC va'a sima Talosaga:
SiC va'a sima o lo'o fa'aaogaina lautele i faiga semiconductor pito i luma, e aofia ai:
• Fa'agasologa o Fa'a'a'aiga: E pei o le LPCVD (Low-Pressure Chemical Vapor Deposition) ma le PECVD (Plasma-Enhanced Chemical Vapor Deposition).
• Togafitiga Maualuluga: E aofia ai le faʻamaʻiina o le vevela, faʻafefeteina, faʻasalalau, ma le faʻapipiʻiina o ion.
• Fa'agasologa Susū & Fa'amamā: Fa'amama fa'ama'i ma la'asaga tau fa'a'ona.
E fetaui lelei ma si'osi'omaga o le ea ma le gaogao,
e lelei mo fabs saili e fa'aiti'itia tulaga lamatia ma fa'aleleia lelei le gaosiga.
Parata ole SiC Wafer Boat:
| Meatotino Faapitoa | ||||
| Fa'asinomaga | Vaega | Taua | ||
| Igoa Mea | Tali Sili Sintered Silicon Carbide | Silikon Carbide fa'asa'o e leai ni fa'amalosi | Silicon Carbide ua toe fa'akristal | |
| Tulaga | RBSiC | SSiC | R-SiC | |
| Ole tele ole Density | g/cm3 | 3 | 3.15 ± 0.03 | 2.60-2.70 |
| Malosi Fa'asusu | MPa (kpsi) | 338(49) | 380(55) | 80-90 (20°C) 90-100(1400°C) |
| Malosi Compressive | MPa (kpsi) | 1120(158) | 3970(560) | > 600 |
| Malosi | Knoop | 2700 | 2800 | / |
| Soli le Lototele | MPa m1/2 | 4.5 | 4 | / |
| Amioga vevela | W/mk | 95 | 120 | 23 |
| Coefficient o le fa'alauteleina o le vevela | 10-6.1/°C | 5 | 4 | 4.7 |
| Avela faapitoa | Joule/g 0k | 0.8 | 0.67 | / |
| Max vevela i le ea | ℃ | 1200 | 1500 | 1600 |
| Elastic Modulus | Gpa | 360 | 410 | 240 |
SiC Ceramics Fa'aaliga Eseese Vaega Fa'apitoa
SiC Ceramic Membrane
SiC ceramic membrane ose vaifofo su'esu'e fa'alelei ua fausia mai le silicon carbide mama, e fa'aalia ai se fausaga malosi e tolu-vaega (fa'asaga lagolago, fa'asaga suiga, ma le vavao vavae'ese) fa'ainisinia e ala i faiga fa'amama vevela maualuga. O lenei mamanu e fa'amautinoa ai le malosi fa'ainisinia fa'apitoa, fa'asoa sa'o le lapopoa o pore, ma le maoa'e le tumau. E sili atu i fa'aoga eseese tau alamanuia e ala i le tu'ueseeseina lelei, fa'atumauina, ma fa'amama vai. Fa'aoga autu e aofia ai le vai ma le vai otaota (ave'esea o mea malō, siama, ma mea filogia), mea'ai ma meainu (fa'amanino ma fa'atumauina sua, susu, ma vai fa'afefete), vaila'au ma biotechnology (fa'amamāina biofluids ma mea vavalo), fa'agaoioiga vaila'au (fa'amama suau'u ma mea fa'aoso), ma suau'u toe gaosia ma fa'asuavai, ma fa'asu'u fa'alumaina.
SiC Paipa
O paipa SiC (silicon carbide) o vaega sima e maualuga le faatinoga ua fuafuaina mo faiga ogaumu semiconductor, gaosia mai le silicon carbide silikoni maualuga-mama e ala i metotia sintering. Latou te faʻaalia le faʻaogaina o le vevela, faʻamautu maualuga-maualuga (tumau i luga ole 1600°C), ma le faʻamaʻiina o vailaʻau. O lo latou fa'alautelega fa'amama maualalo ma le malosi fa'ainisinia e fa'amautinoa ai le mautu i lalo o le uila vevela vevela, fa'aitiitia lelei le fa'aleagaina ma le ofuina. O paipa SiC e talafeagai mo afi faʻasalalau, ogaumu faʻamaʻi, ma faiga LPCVD / PECVD, faʻatagaina le tufatufaina atu o le vevela ma tulaga faʻamautu e faʻaitiitia ai le faaletonu o le wafer ma faʻaleleia le tutusa o le tuʻuina o ata manifinifi. E le gata i lea, o le mafiafia, le porous fausaga ma le inertness kemikolo o le SiC tetee tafia mai kasa toe gaoioi e pei o le okesene, hydrogen, ma amonia, faʻalauteleina le ola tautua ma faʻamautinoa le mama o le faagasologa. SiC tubes e mafai ona faʻapipiʻiina i le lapopoa ma le mafiafia o le puipui, faʻatasi ai ma le saʻo lelei o masini e maua ai le lamolemole i totonu ma le maualuga maualuga e lagolago ai le tafe o le laminar ma le paleni faʻamatalaga vevela. O le fa'ailoina o luga po'o le fa'apipi'iina o filifiliga e fa'aititia atili ai le fa'atupuina o vaega ma fa'aleleia le fa'a'ele'ele, fa'amalieina mana'oga o le gaosiga semiconductor mo le sa'o ma le fa'amaoni.
SiC Ceramic Cantilever Foe
O le mamanu monolithic o lau SiC cantilever e matua faʻaleleia atili ai le malosi faʻainisinia ma le tutusa vevela aʻo faʻaumatia sooga ma mea vaivai masani i mea tuʻufaʻatasia. O latou pito e sa'o-fa'aiila e latalata i fa'ata fa'amae'a, fa'aitiitia le fa'atupuina o matā'ele ma fa'afetaui tulaga o potu mama. O le inertia vaila'au fa'aanatura o le SiC e taofia ai le alu ese, pala, ma le fa'aogaina o le fa'agasologa o si'osi'omaga (fa'ata'ita'iga, okesene, ausa), fa'amautinoa le mautu ma le fa'amaoni i le fa'asalalauina/fa'ama'i. E ui lava i le saoasaoa o le uila afi, o le SiC o loʻo faʻatumauina le faʻatulagaina o le faʻamaoni, faʻalauteleina le ola tautua ma faʻaitiitia le taimi faʻaleleia. O le natura mama o le SiC e mafai ai ona vave tali atu i le vevela, faʻavaveina le faʻavevela / malulu ma faʻaleleia le gaosiga ma le malosi. O lo'o maua nei lau i lapopo'a fa'apitoa (feso'ota'i ma 100mm i le 300mm + wafers) ma fa'afetaui i mamanu eseese o le ogaumu, fa'aolaina le fa'atinoga faifaipea i fa'agasologa semiconductor pito i luma ma tua.
Alumina Vacuum Chuck Folasaga
Al₂O₃ vacuum chucks o meafaigaluega taua i le gaosiga o semiconductor, maua ai le lagolago mautu ma le sa'o i le tele o faiga:•Thinning: E ofoina atu le lagolago toniga i le taimi o manifinifi wafer, fa'amautinoa le fa'aitiitiga maualuga o mea'ai e fa'aleleia atili ai le fa'amamaina o le vevela ma le fa'atinoga o masini.
• Dicing: E maua ai le su'esu'e lelei i le taimi o le tisiina o le wafer, fa'aitiitia ai le fa'aleagaina ma fa'amautinoa le mama o tipi mo tupe meata'i ta'itasi.
• Fa'amamā: O lona lamolemole, fa'ameamea fa'apipi'i luga e mafai ai ona 'ave'esea lelei mea fa'aleaga e aunoa ma le fa'aleagaina o fafie i taimi o fa'amama.
•Felauaiga: Tuuina atu le lagolago maufaatuatuaina ma le saogalemu i le taimi o le taulimaina ma le felauaiga, faʻaitiitia ai le lamatiaga o le faʻaleagaina ma le faʻaleagaina.
1. Uniform Micro-Porous Ceramic Technology
• Fa'aaogaina nano-pauta e fatu ai le tufatufaina tutusa ma feso'ota'i pores, e maua ai le porosity maualuga ma se fausaga mafiafia tutusa mo le lagolago tumau ma faatuatuaina wafer.
2. Meatotino Mea Fa'apitoa
- Fabricated mai ultra-mama 99.99% alumina (Al₂O₃), o loʻo faʻaalia:
• Meatotino Thermal: Tete'e vevela maualuga ma lelei conductivity vevela, talafeagai mo siosiomaga semiconductor maualuga-vevela.
• Meatotino Fa'ainisinia: O le malosi ma le ma'a'a maualuga e fa'amautinoa ai le tumau, fa'aofuofu tete'e, ma le ola umi.
• Fa'amanuiaga Fa'aopoopo: Fa'asalaina eletise maualuga ma le fa'a'ele'ele, fetu'una'i i tulaga eseese o gaosiga.
3• Fa'amautinoa le sa'o ma le mautu o le tagofiaina o wafer ma le maualuga mafolafola ma le tutusa, fa'aitiitia le fa'alavelave fa'aleagaina ma fa'amautinoa le fa'amalieina o taunu'uga. O lona fa'aogaina lelei o le ea ma le malosi adsorption tutusa e fa'aleleia atili ai le fa'atuatuaina o galuega.
O le Al₂O₃ vacuum chuck e tu'ufa'atasia le fa'aogaina o tekonolosi micro-porous, mea fa'apitoa fa'apitoa, ma le sa'o maualuga e lagolago ai fa'agasologa semiconductor taua, fa'amautinoa le lelei, fa'atuatuaina, ma le fa'aogaina o le fa'aleagaina i le fa'amama, fa'amama, ma felauaiga.
Alumina Robot Arm & Alumina Ceramic End Effector Brief
Alumina (Al₂O₃) sima robotic lima o vaega taua tele mo le tagofiaina o wafer i le gaosiga semiconductor. Latou te faʻafesoʻotaʻi saʻo i wafers ma e nafa ma le faʻafeiloaʻi saʻo ma le faʻatulagaina i totonu o siosiomaga faigata e pei ole vacuum poʻo tulaga maualuga-vevela. O lo latou taua autu o loʻo taoto i le faʻamautinoaina o le saogalemu o le wafer, puipuia o le faʻaleagaina, ma le faʻaleleia atili o meafaigaluega faʻaogaina ma maua mai e ala i meatotino faʻapitoa.
| Mea Fa'apitoa | Faʻamatalaga Faʻamatalaga |
| Meatotino Fa'ainisinia | O le alumina maualuga-mama (fa'ata'ita'iga,> 99%) e maua ai le maaa maualuga (Mohs maaa e oo atu i le 9) ma le malosi faʻafefete (e oʻo atu i le 250-500 MPa), faʻamautinoa le teteʻe o le ofuina ma le aloese mai suiga, ma faʻalauteleina ai le ola tautua.
|
| Insulation eletise | Tete'e o le vevela o le potu e o'o atu i le 10¹⁵ Ω·cm ma le malosi fa'amama o le 15 kV/mm e puipuia lelei ai le fa'aeletise o le eletise (ESD), e puipuia ai ma'ale'ale ma'ale'ale mai le fa'alavelave ma fa'aleagaina.
|
| Maumau vevela | Ole maualuga ole liusuavai ile 2050°C e mafai ai ona fa'asagatau fa'agaioiga vevela maualuga (fa'ata'ita'iga, RTA, CVD) ile gaosiga semiconductor. O le fa'alauteleina o le vevela maualalo e fa'aitiitia ai le fa'aoso ma fa'atumauina le mautu i lalo ole vevela.
|
| Ole malosi ole vaila'au | Ole tele ole acids, alkalis, kasa fa'agaioiga, ma mea fa'amamā, puipuia ai le fa'aleagaina o vaega po'o le fa'asa'olotoina o ion. Ole mea lea e fa'amautinoa ai le fa'amama ole si'osi'omaga ole gaosiga ma 'alo'ese mai le fa'aleagaina o luga ole papa.
|
| Isi Fa'amanuiaga | Fa'atekonolosi fa'atagata matutua e ofoina atu le maualuga o le tau; luga e mafai ona sa'o-poiila i lalo roughness, atili fa'aitiitia ai a'afiaga fa'atupu a'afiaga.
|
Alumina ceramic robotic arms e masani ona faʻaaogaina i le pito i luma o le gaosiga o semiconductor, e aofia ai:
• Fa'afoeina ma le Tu'uina o Wafer: Fa'asolo ma sa'o lelei ma tu'u fa'ameamea (fa'ata'ita'iga, 100mm i le 300mm+ lapopo'a) i totonu ole si'osi'omaga gaogao po'o le mama maualuga, fa'aitiitia le fa'aleagaina ma le fa'aleagaina.
• E pei ole vave fa'a'a'a'a'a (RTA), fa'a'ave'a fa'a'ave'au (CVD), ma fa'ama'i plasma, e fa'atumauina ai le mautu i lalo ole vevela maualuga, fa'amautinoaina le fa'agasologa ma fua.
•Otometi Wafer Handling System: Fa'apipi'i i masini wafer fe'avea'i robots e fa'amutaina fa'ai'uga e fa'autometi ai le fesiita'iga o le wafer i le va o meafaigaluega, fa'aleleia le lelei o le gaosiga.
Fa'ai'uga
O le XKH e faʻapitoa i le R & D ma le gaosiga o mea faʻapipiʻi silicon carbide (SiC) ma alumina (Al₂O₃) vaega ceramic, e aofia ai lima robotic, paddles cantilever, vacuum chucks, wafer boats, ogaumu ogaumu, ma isi vaega maualuga, tautua semiconductors, malosi fou, aerospace, ma alamanuia maualuga. Matou te tausisi i le gaosiga saʻo, faʻatonuga lelei, ma faʻatekonolosi fou, faʻaogaina faiga faʻapipiʻi faʻasolosolo (faʻataʻitaʻiga, sintering le faʻamalosi, tali faʻafefe) ma metotia faʻaogaina saʻo (faʻataʻitaʻiga, CNC grinding, polesi) e faʻamautinoa ai le maualuga o le maualuga o le vevela, malosi faʻainisinia, vailaʻau inertness, ma le saʻo saʻo. Matou te lagolagoina le faʻatulagaina e faʻavae i luga o ata, ofoina atu fofo faʻapitoa mo fua, foliga, faʻamaeʻaina, ma togi mea e fetaui ma manaoga patino o tagata o tausia. Matou te tuuto atu i le tuʻuina atu o vaega sima faʻalagolago ma lelei mo le gaosiga maualuga o le lalolagi, faʻaleleia le faʻatinoina o meafaigaluega ma le gaosiga lelei mo a matou tagata faʻatau.
Oloa Fa'atatau
-
Dia3mm SiC Ceramic polo Silicon carbide Ceramic...
-
Silicon Carbide Prism / Fa'ata Mo Infrared Opt...
-
Silisi Carbide Beam Silicon Carbide Beam Toe fa'afoliga...
-
Alumina ceramic arm custom Ceramic robotic lima
-
Polycrystalline Al2O3 alumina ceramics customiz...
-
SiC siC chuck fata ipu sima suction ipu mu...