Oloa
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SiC Ingot Growth ogaumu mo SiC Crystal TSSG/LPE Metotia Tele-Diamita
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Infrared Picosecond Dual-Platform Laser Cutting mea faigaluega mo Mata tioata/Quartz/Sapphire Processing
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Ma'a ma'a'a lanu pa'epa'e Sapphire ma'amea fa'ameamea mo teuteuga o le tipi fua fua
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SiC fa'ai'u sima lima tu'uina atu mo le ga'o fa'amomoli
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4inch 6inch 8inch SiC Crystal Growth ogaumu mo le CVD Process
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6 Inisi 4H SEMI Ituaiga SiC tu'ufa'atasi substrate Mafiafia 500μm TTV≤5μm MOS vasega
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Fa'asinomaga Fa'atusa Sapphire Optical Pupuni Safaira Vaega ma Sao Faila
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SiC ipu sima/ fata mo le 4 inisi 6 inisi mea wafer u'u mo ICP
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Fa'amalama Safaira Fa'apitoa Fa'ata'ita'i Ma'a'a maualuga mo Va'aiga Telefonitele
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12 inisi SiC Substrate N Ituaiga Lapopo'a Tele Talosaga RF Fa'atinoga
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Custom N Type SiC Seed Substrate Dia153/155mm Mo Malosiaga Fa'aeletonika
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Infrared Nanosecond Laser Drilling mea faigaluega mo Glass Drilling thickness≤20mm