SiC
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12 inisi SIC substrate silicon carbide vasega muamua lautele 300mm lapopo'a tele 4H-N Talafeagai mo le malosi maualuga masini dissipation vevela
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8 inisi SiC silicon carbide wafer 4H-N ituaiga 0.5mm gaosiga vasega su'esu'ega vasega aganu'u polesi substrate
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HPSI SiC wafer dia:3inisi mafiafia:350um± 25 µm mo Malosiaga Fa'aeletonika
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3inisi Maualuga mama Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
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P-ituaiga SiC substrate SiC wafer Dia2inch oloa fou
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8inch 200mm Silicon Carbide SiC Wafers 4H-N ituaiga Gaosia vasega 500um mafiafia
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2Inisi 6H-N Silicon Carbide Substrate Sic Wafer Faila Faila Fa'aa'oa'i Palemia Vasega Mos Vasega
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HPSI SiC Wafer ≥90% Transmittance Optical Grade mo AI/AR Matatioata
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Semi-Insulating Silicon Carbide (SiC) Lafoa'i Maualuga-Mama Mo Matatioata Ar
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4H-SiC Epitaxial Wafers mo MOSFETs Mata'utia Voltage (100–500 μm, 6 inisi)
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SICOI (Silicon Carbide on Insulator) Wafers SiC Film ON Silicon
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Silicon Carbide (SiC) Tasi-Crystal Substrate - 10 × 10mm Wafer