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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C ituaiga 2inch 3inch 4inch 6inch 8inch

SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C ituaiga 2inch 3inch 4inch 6inch 8inch Ata Fa'aalia
  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C ituaiga 2inch 3inch 4inch 6inch 8inch
  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C ituaiga 2inch 3inch 4inch 6inch 8inch
  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C ituaiga 2inch 3inch 4inch 6inch 8inch
  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C ituaiga 2inch 3inch 4inch 6inch 8inch
  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C ituaiga 2inch 3inch 4inch 6inch 8inch
  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C ituaiga 2inch 3inch 4inch 6inch 8inch

Fa'amatalaga Pupuu:

Matou te ofoina atu le tele o filifiliga eseese o wafer SiC (Silicon Carbide) e maualuga le tulaga, faʻatasi ai ma le taulaʻi faapitoa i wafer N-type 4H-N ma le 6H-N, e fetaui lelei mo faʻaoga i optoelectronics faʻaonaponei, masini eletise, ma siosiomaga vevela maualuga. O nei wafer N-type e lauiloa i lo latou faʻavevela lelei, mautu lelei o le eletise, ma le tumau mataʻina, ma avea ai ma mea lelei atoatoa mo faʻaoga maualuga le faʻatinoga e pei o le eletise eletise, faiga faʻataʻavaleina o taʻavale eletise, inverters malosiaga faʻafouina, ma sapalai eletise faʻapisinisi. I le faʻaopoopoga i a matou ofo N-type, matou te tuʻuina atu foʻi wafer P-type 4H/6H-P ma le 3C SiC mo manaʻoga faʻapitoa, e aofia ai masini maualuga-frequency ma RF, faʻapea foʻi ma faʻaoga photonic. O a matou wafer e maua i lapopoʻa e amata mai i le 2 inisi i le 8 inisi, ma matou te tuʻuina atu fofo faʻapitoa e faʻafetaui ai manaʻoga faʻapitoa o vaega faʻapisinisi eseese. Mo nisi faʻamatalaga poʻo fesili, faʻamolemole lagona le saoloto e faʻafesoʻotaʻi matou.


Fa'aaliga

Meatotino

4H-N ma le 6H-N (N-type SiC Wafers)

Talosaga:E fa'aaogā muamua i le eletise eletise, optoelectronics, ma galuega i le vevela maualuga.

Lapoa o le lautele:50.8 mm i le 200 mm.

Mafiafia:350 μm ± 25 μm, faatasi ai ma mafiafia e mafai ona filifili e 500 μm ± 25 μm.

Tete'e:Ituaiga-N 4H/6H-P: ≤ 0.1 Ω·cm (vasega-Z), ≤ 0.3 Ω·cm (vasega-P); Ituaiga-N 3C-N: ≤ 0.8 mΩ·cm (vasega-Z), ≤ 1 mΩ·cm (vasega-P).

Ma'a'a:Ra ≤ 0.2 nm (CMP po'o le MP).

Mafiafia o le Maikopipa (MPD):< 1 tasi/cm².

TTV: ≤ 10 μm mo lautele uma.

Fa'alava: ≤ 30 μm (≤ 45 μm mo wafers 8-inisi).

Tuusaunoaga o le Pito:3 mm i le 6 mm e fuafua i le ituaiga o le uamea.

Afifiina:Kaseti wafer e tele pe koneteina wafer e tasi.

E tele isi lapo'a e maua: 3 inisi 4 inisi 6 inisi 8 inisi

HPSI (Masini SiC e Mamā Maualuga)

Talosaga:Fa'aaogaina mo masini e mana'omia ai le tete'e maualuga ma le fa'atinoga mautu, e pei o masini RF, fa'aoga photonic, ma sensors.

Lapoa o le lautele:50.8 mm i le 200 mm.

Mafiafia:Mafiafia masani o le 350 μm ± 25 μm faatasi ai ma filifiliga mo wafers mafiafia e oo atu i le 500 μm.

Ma'a'a:Ra ≤ 0.2 nm.

Mafiafia o le Maikopipa (MPD): ≤ 1 tasi/cm².

Tete'e:Tete'e maualuga, e masani ona fa'aaogaina i galuega e fai ai ni vaega e le'i fa'avevela tele.

Fa'alava: ≤ 30 μm (mo lapopo'a laiti), ≤ 45 μm mo lautele tetele.

TTV: ≤ 10 μm.

E tele isi lapo'a e maua: 3 inisi 4 inisi 6 inisi 8 inisi

4H-P、6H-P&3C SiC wafer(P-type SiC Wafers)

Talosaga:E fa'avae lava mo masini eletise ma masini fa'atelevave.

Lapoa o le lautele:50.8 mm i le 200 mm.

Mafiafia:350 μm ± 25 μm po'o filifiliga fa'apitoa.

Tete'e:Ituaiga-P 4H/6H-P: ≤ 0.1 Ω·cm (vasega-Z), ≤ 0.3 Ω·cm (vasega-P).

Ma'a'a:Ra ≤ 0.2 nm (CMP po'o le MP).

Mafiafia o le Maikopipa (MPD):< 1 tasi/cm².

TTV: ≤ 10 μm.

Tuusaunoaga o le Pito:3 mm i le 6 mm.

Fa'alava: ≤ 30 μm mo lapopo'a laiti, ≤ 45 μm mo lapopo'a tetele.

E tele isi lapo'a e maua: 3 inisi ma le 4 inisi ma le 6 inisi5×5 10×10

Laulau o Fa'amaumauga Fa'avaega

Meatotino

2 inisi

3 inisi

4 inisi

6 inisi

8 inisi

Ituaiga

4H-N/HPSI/
6H-N/4H/6H-P/3C;

4H-N/HPSI/
6H-N/4H/6H-P/3C;

4H-N/HPSI//4H/6H-P/3C;

4H-N/HPSI//4H/6H-P/3C;

4H-N/HPSI/4H-SEMI

Lapoa

50.8 ± 0.3 mm

76.2±0.3mm

100±0.3mm

150±0.3mm

200 ± 0.3 mm

Mafiafia

330 ± 25 um

350 ±25 um

350 ±25 um

350 ±25 um

350 ±25 um

350±25um；

500±25um

500±25um

500±25um

500±25um

pe fa'apitoa

pe fa'apitoa

pe fa'apitoa

pe fa'apitoa

pe fa'apitoa

Fa'alavelave

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Fa'alava

≤ 30um

≤ 30um

≤ 30um

≤ 30um

≤45um

TTV

≤ 10um

≤ 10um

≤ 10um

≤ 10um

≤ 10um

Vali/Eli

CMP/MP

MPD

<1ea/cm-2

<1ea/cm-2

<1ea/cm-2

<1ea/cm-2

<1ea/cm-2

Foliga

Lapotopoto, Mafolafola 16mm; O le umi 22mm; O le Umi 30/32.5mm; O le Umi 47.5mm; TALATALA; TALATALA;

Fa'alava

45°, SEMI Spec; Foliga C

 Vasega

Vasega gaosiga mo le MOS&SBD; Vasega suʻesuʻe; Vasega faʻataʻitaʻi, Vasega fatu wafer

Fa'amatalaga

Lapoa, Mamafa, Fa'asinomaga, e mafai ona fa'apitoa fa'amatalaga o lo'o i luga e tusa ai ma lau talosaga

 

Talosaga

·Eletise Malosiaga

E taua tele wafers SiC ituaiga N i masini eletise eletise ona o lo latou gafatia e taulimaina le maualuga o le voltage ma le tafe maualuga. E masani ona faʻaaogaina i mea e fesuiaʻi ai le eletise, inverters, ma motor drives mo alamanuia e pei o le malosiaga faʻafouina, taʻavale eletise, ma le faʻaogaina o masini faʻapisinisi.

· Optoelectronics
O mea SiC ituaiga N, aemaise lava mo fa'aoga optoelectronic, e fa'aaogaina i masini e pei o light-emitting diodes (LEDs) ma laser diodes. O lo latou maualuga o le thermal conductivity ma le lautele o le bandgap e avea ai ma mea lelei mo masini optoelectronic e maualuga le fa'atinoga.

·Fa'aoga i le Vevela Maualuga
E fetaui lelei wafers 4H-N 6H-N SiC mo siosiomaga e maualuga le vevela, e pei o masini fa'alogo ma masini eletise e fa'aaogaina i vaalele, ta'avale, ma fale gaosi oloa lea e taua tele ai le fa'aitiitia o le vevela ma le mautu i le maualuga o le vevela.

·Masini RF
E fa'aaogaina wafers 4H-N 6H-N SiC i masini leitio (RF) e fa'agaoioia i vaega maualuga o le televave. E fa'aaogaina i faiga feso'ota'iga, tekinolosi radar, ma feso'ota'iga satelite, lea e mana'omia ai le maualuga o le lelei ma le fa'atinoga o le eletise.

·Fa'aoga Fa'a-Fonika
I le photonics, e faʻaaogaina SiC wafers mo masini e pei o photodetectors ma modulators. O uiga tulaga ese o le meafaitino e mafai ai ona aoga i le gaosiga o le malamalama, modulation, ma le iloa i faiga fesoʻotaʻiga opitika ma masini ata.

·Sensors
E fa'aaogaina masini SiC i le tele o fa'aoga o masini fa'alogo, aemaise lava i siosiomaga faigata e ono fa'aletonu ai isi meafaitino. E aofia ai masini fa'alogo o le vevela, mamafa, ma vaila'au, ia e taua tele i vaega e pei o ta'avale, suau'u ma kesi, ma le mata'ituina o le siosiomaga.

·Faiga Fa'aeletise mo le Aveta'avale
E taua tele le sao o le tekinolosi SiC i ta'avale eletise e ala i le fa'aleleia atili o le lelei ma le fa'atinoga o faiga fa'aeletise. Fa'atasi ai ma semiconductors eletise SiC, e mafai e ta'avale eletise ona ausia le ola sili atu o le maa, vave le taimi e fa'atumu ai, ma sili atu le lelei o le fa'aogaina o le malosiaga.

·Sensors Fa'atekonolosi ma Photonic Converters
I tekinolosi fa'atekonolosi fa'aonaponei, e fa'aaogaina ai SiC wafers mo le fatuina o sensors sa'o maualuga mo fa'aoga i robotics, masini fa'afoma'i, ma le mata'ituina o le siosiomaga. I photonic converters, e fa'aaogaina meatotino a le SiC e mafai ai ona liua lelei le malosiaga eletise i fa'ailo opitika, lea e taua tele i feso'ota'iga ma atina'e initaneti saoasaoa maualuga.

Fesili ma Tali

Q：O le ā le 4H i le 4H SiC?
A：O le "4H" i le 4H SiC e faasino i le fausaga tioata o le silicon carbide, aemaise lava o se foliga hexagonal ma vaega e fa (H). O le "H" e faailoa mai ai le ituaiga o le hexagonal polytype, e iloa ai mai isi SiC polytypes e pei o le 6H po o le 3C.

Q：O le a le conductivity vevela o le 4H-SiC?
AO le fa'avevela o le 4H-SiC (Silicon Carbide) e tusa ma le 490-500 W/m·K i le vevela o le potu. O lenei maualuga o le fa'avevela e fetaui lelei mo fa'aoga i mea fa'aeletoronika eletise ma siosiomaga e maualuga le vevela, lea e taua tele ai le fa'asa'olotoina lelei o le vevela.

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