HPSI SiC Wafer ≥90% Transmittance Optical Grade mo AI/AR Matatioata

Fa'amatalaga Puupuu:

Parameter	Vasega	Alafua 4-Inisi	6-Inisi Alafua
Diamita	Z Vasega / D Vasega	99.5 mm – 100.0 mm	149.5 mm – 150.0 mm
Poly-ituaiga	Z Vasega / D Vasega	4H	4H
mafiafia	Z Vasega	500 μm ± 15 μm	500 μm ± 15 μm
mafiafia	D Vasega	500 μm ± 25 μm	500 μm ± 25 μm
Fa'atonuga ole wafer	Z Vasega / D Vasega	I luga ole axis: <0001> ± 0.5°	I luga ole axis: <0001> ± 0.5°
Micropipe Density	Z Vasega	≤ 1 cm²	≤ 1 cm²
Micropipe Density	D Vasega	≤ 15 cm²	≤ 15 cm²
Tete'e	Z Vasega	≥ 1E10 Ω·cm	≥ 1E10 Ω·cm
Tete'e	D Vasega	≥ 1E5 Ω·cm	≥ 1E5 Ω·cm

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Fa'atomuaga Autu: Le Matafaioi a HPSI SiC Wafers i Matatioata AI/AR...

HPSI (High-Purity Semi-Insulating) Silicon Carbide wafers o wafers fa'apitoa e fa'aalia i le maualuga o le tete'e (>10⁹ Ω·cm) ma le maualalo tele o fa'aletonu. I matatioata AI / AR, e masani ona avea ma mea autu mo matatioata faʻataʻavalevale mataʻutia, faʻafesoʻotaʻi fagu e fesoʻotaʻi ma mea faʻapitoa masani i tulaga o mea manifinifi-ma-malamalama, vevela vevela, ma faʻatinoga faʻapitoa. Mo se faʻataʻitaʻiga, AR tioata faʻaaogaina tioata SiC waveguide e mafai ona ausia se ultra-wide field of view (FOV) o le 70°-80°, ae faʻaititia le mafiafia o se tasi tioata i le naʻo le 0.55mm ma le mamafa i le na o le 2.7g, faʻaleleia atili le ofuina o le mafanafana ma le faatofu vaaia.

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Uiga Autu: Fa'afefea ona fa'amalosia e le SiC Material le AI/AR Glasses Design

Fa'asinomaga Maualuluga Fa'asinomaga ma le Optical Performance Optimization

Ole fa'asino ole su'esu'e a le SiC (2.6–2.7) e toetoe lava 50% maualuga atu nai lo tioata masani (1.8–2.0). Ole mea lea e mafai ai ona faʻaogaina faʻataʻitaʻiga faʻafefete ma sili atu ona lelei, faʻalauteleina le FOV. E fesoasoani foi le faasino igoa maualuga e taofia ai le "aafiaga o le nuanua" masani i ta'iala galu eseese, fa'aleleia atili le mama o ata.

Malosiaga Pulea Fa'avevela Fa'apitoa

Fa'atasi ai ma se fa'avevela vevela e o'o atu i le 490 W/m·K (latalata i le apamemea), e mafai ona vave fa'ate'a'ese e le SiC le vevela e maua mai fa'aaliga fa'aaliga Micro-LED. E taofia ai le fa'aleagaina o le fa'atinoga po'o le matua o masini ona o le maualuga o le vevela, fa'amautinoa le umi o le ola maa ma le mautu maualuga.

Malosi fa'ainisinia ma le tumau

O le SiC e 9.5 le maaa o le Mohs (na'o le taimane lona lua), e ofo mai ai le maoa'e tulaga ese, ma fa'alelei ai mo matatioata fa'aaoga masani. E mafai ona fa'atonutonuina lona mata'utia i le Ra <0.5 nm, fa'amautinoaina le maualalo o le gau ma le fa'aogaina o le malamalama maualuga i ta'iala galu.

Faiga Fa'aeletise Meatotonu

O le tetee a le HPSI SiC (>10⁹ Ω·cm) e fesoasoani e taofia ai le faalavelaveina o faailo. E mafai foi ona avea o se masini eletise lelei meafaitino, sili ona lelei le puleaina o le eletise i matatioata AR.

Fa'atonuga Talosaga Tulaga Muamua

Vaega Matagofie Autu mo AI/AR Glasses

Diffractive Waveguide Lenses: SiC substrates o loʻo faʻaaogaina e fausia ai ni taʻiala faʻafefete e sili ona manifinifi e lagolagoina ai le FOV tetele ma le faʻaumatiaina o le nuanua.
Papatusi Faʻamalama ma Prisms: E ala i le tipiina ma le faʻamalo, e mafai ona faʻaogaina le SiC i faʻamalama puipui poʻo prisms faʻapipiʻi mo matatioata AR, faʻaleleia le faʻamalamalamaina o le malamalama ma le faʻaogaina o le faʻaogaina.

Fa'aopoopoina Talosaga i Isi Fields

Malosiaga Fa'aeletonika: Fa'aaogaina i tulaga maualuga-telefoni, maualuga-malosi fa'aaliga pei o mea fou fa'aliliu taavale malosi ma fa'atautaia afi fa'apisinisi.
Quantum Optics: E fai ma talimalo mo nofoaga autu lanu, faʻaaogaina i mea e faʻaogaina mo fesoʻotaʻiga tele ma masini faʻalogo.

4 Inisi & 6 Inisi HPSI SiC Substrate Fa'atusatusaga Fa'atusatusaga

Parameter	Vasega	Alafua 4-Inisi	6-Inisi Alafua
Diamita	Z Vasega / D Vasega	99.5 mm - 100.0 mm	149.5 mm - 150.0 mm
Poly-ituaiga	Z Vasega / D Vasega	4H	4H
mafiafia	Z Vasega	500 μm ± 15 μm	500 μm ± 15 μm
mafiafia	D Vasega	500 μm ± 25 μm	500 μm ± 25 μm
Fa'atonuga ole wafer	Z Vasega / D Vasega	I luga ole axis: <0001> ± 0.5°	I luga ole axis: <0001> ± 0.5°
Micropipe Density	Z Vasega	≤ 1 cm²	≤ 1 cm²
Micropipe Density	D Vasega	≤ 15 cm²	≤ 15 cm²
Tete'e	Z Vasega	≥ 1E10 Ω·cm	≥ 1E10 Ω·cm
Tete'e	D Vasega	≥ 1E5 Ω·cm	≥ 1E5 Ω·cm
Primary Flat Orientation	Z Vasega / D Vasega	(10-10) ± 5.0°	(10-10) ± 5.0°
Primary Flat Umi	Z Vasega / D Vasega	32.5 mm ± 2.0 mm	Notch
Lua mafolafola Umi	Z Vasega / D Vasega	18.0 mm ± 2.0 mm	-
Fa'ate'a pito	Z Vasega / D Vasega	3 mm	3 mm
LTV / TTV / Aufana / Warp	Z Vasega	≤ 2.5 μm / ≤ 5 μm / ≤ 15 μm / ≤ 30 μm	≤ 2.5 μm / ≤ 6 μm / ≤ 25 μm / ≤ 35 μm
LTV / TTV / Aufana / Warp	D Vasega	≤ 10 μm / ≤ 15 μm / ≤ 25 μm / ≤ 40 μm	≤ 5 μm / ≤ 15 μm / ≤ 40 μm / ≤ 80 μm
Fa'asaa	Z Vasega	Polani Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm	Polani Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm
Fa'asaa	D Vasega	Polani Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm	Polani Ra ≤ 1 nm / CMP Ra ≤ 0.5 nm
Ta'eta'e pito	D Vasega	Vaega fa'aopoopo ≤ 0.1%	Umi fa'aputu ≤ 20 mm, tasi ≤ 2 mm
Polytype Areas	D Vasega	Vaega fa'aopoopo ≤ 0.3%	Vaega fa'aopoopo ≤ 3%
Fa'aaofia o le Carbon Visual	Z Vasega	Vaega fa'aopoopo ≤ 0.05%	Vaega fa'aopoopo ≤ 0.05%
Fa'aaofia o le Carbon Visual	D Vasega	Vaega fa'aopoopo ≤ 0.3%	Vaega fa'aopoopo ≤ 3%
Mata'i Silikoni	D Vasega	5 faatagaina, taitasi ≤1mm	Umi fa'aputu ≤ 1 x lautele
Edge Chips	Z Vasega	Leai se faatagaina (lautele ma loloto ≥0.2mm)	Leai se faatagaina (lautele ma loloto ≥0.2mm)
Edge Chips	D Vasega	7 faatagaina, taitasi ≤1mm	7 faatagaina, taitasi ≤1mm
Fa'a'ese'ese le siu fa'amea filo	Z Vasega	-	≤ 500 cm²
afifiina	Z Vasega / D Vasega	Tele-wafer kaseti po'o se atigi apa e tasi	Tele-wafer kaseti po'o se atigi apa e tasi

Au'aunaga XKH: Tu'ufa'atasiga Gauai ma Fa'atonuga

O loʻo i ai i le kamupani XKH le malosi faʻapipiʻi tuʻufaʻatasia mai mea mataʻutia e maeʻa wafers, e aofia ai le filifili atoa o le SiC substrate tuputupu aʻe, tipi, polesi, ma aga masani. O tulaga lelei o auaunaga e aofia ai:

Mea Eseese:E mafai ona matou tuʻuina atu ituaiga wafer eseese e pei o le ituaiga 4H-N, ituaiga 4H-HPSI, ituaiga 4H / 6H-P, ma le ituaiga 3C-N. Resistivity, mafiafia, ma orientation e mafai ona fetuunai e tusa ai ma manaoga.
'Fetuutuunai Laisene Fa'apitoa:Matou te lagolagoina le fa'agaioiina o mea'ai mai le 2-inisi i le 12-inisi le lautele, ma e mafai fo'i ona fa'agaioia fausaga fa'apitoa e pei o fasi sikuea (fa'ata'ita'iga, 5x5mm, 10x10mm) ma prisms le masani.
Pulea Sa'o Tulaga Mata'utia:Vafer Total Thickness Variation (TTV) e mafai ona tausia i le <1μm, ma le gaogao i luga ole Ra <0.3 nm, faʻafeiloaʻi manaʻoga mafolafola nano-level mo masini taʻavale.
Tali vave Maketi:O le faʻataʻitaʻiga faʻapisinisi tuʻufaʻatasia e faʻamautinoa ai le lelei o suiga mai le R&D i le tele o gaosiga, lagolagoina mea uma mai le faʻamaoniga laiti i le tele o uta (taimi taʻitaʻi masani 15-40 aso).

FAQ ole HPSI SiC Wafer

Q1: Aisea ua manatu ai le HPSI SiC o se mea e sili ona lelei mo mata tioata AR?
A1: O lona fa'asinomaga maualuga (2.6-2.7) e mafai ai ona manifinifi, sili atu le lelei o fausaga ta'iala e lagolagoina ai le tele o le va'aiga (fa'ata'ita'iga, 70°–80°) a'o fa'aumatia le "aafiaga nuanua".
Q2: E fa'afefea ona fa'aleleia e le HPSI SiC le fa'aogaina o le vevela ile matatioata AI/AR?
A2: Faʻatasi ai ma le faʻaogaina o le vevela e oʻo atu i le 490 W / m · K (latalata i le kopa), e faʻamalo lelei le vevela mai vaega e pei o Micro-LEDs, faʻamautinoa le faʻatinoina o le faʻatinoga ma le umi o le ola o le masini.
Q3: O a ni fa'amanuiaga tumau o lo'o ofoina mai e HPSI SiC mo matatioata fa'aogaina?
A3: O lona ma'a'a fa'apitoa (Mohs 9.5) e maua ai le malosi o le maosi, ma fa'atumauina ai mo le fa'aoga i aso uma i matatioata AR fa'atau.