12 Inisi SiC substrate Diameter 300mm Mafiafia 750μm 4H-N Ituaiga e mafai ona fa'avasegaina

Fa'amatalaga Puupuu:

I se tulaga ogaoga i le suiga o le alamanuia semiconductor agai atu i fofo sili atu ona lelei ma faʻatusatusa, o le tulaʻi mai o le 12-inisi SiC substrate (12-inisi silicon carbide substrate) ua matua suia ai le laufanua. Pe a fa'atusatusa i fa'amatalaga masani 6-inisi ma 8-inisi, o le tele-tele le lelei o le substrate 12-inisi e fa'ateleina ai le aofa'i o tupe meataalo e gaosia i le wafer e sili atu ma le fa. E le gata i lea, o le tau o le 12-inisi SiC substrate e faʻaititia i le 35-40% faʻatusatusa i mea masani 8-inisi, e taua tele mo le faʻalauteleina o le faʻaaogaina o oloa faʻaiʻuga.
E ala i le fa'aaogaina o la matou fa'atekonolosi fa'atupuina o felauaiga ausa, ua matou ausia ai le fa'atonutonuina o alamanuia i le tele o le fa'a'ese'ese i tioata 12-inisi, ma maua ai se fa'avae fa'apitoa mo le gaosiga o masini. O lenei alualu i luma e sili ona taua i le lotolotoi o le le lava o chip i le lalolagi i le taimi nei.

O masini eletise autu i faʻaoga i aso uma-e pei o le EV faʻapipiʻi vave ma nofoaga autu 5G-ua faʻateleina le faʻaaogaina o lenei mea lapopoa tele. Aemaise lava i le maualuga o le vevela, maualuga-voltage, ma isi siosiomaga faʻaogaina faigata, 12-inisi SiC substrate faʻaalia le sili atu le mautu pe a faʻatusatusa i mea e faʻavae i luga o le kasa.

Auina imeli ia matou

Vaega

Fa'agata fa'atekinisi

12 inisi Silicon Carbide (SiC) Substrate Fa'amatalaga
Vasega		ZeroMPD Gaosiga Vasega(Z Vasega)	Gaosiga Fa'ata'atia Vasega(P Vasega)		Fa'ailoga Tulaga (D Vasega)
Diamita		3 0 0 mm~1305mm
mafiafia	4H-N	750μm±15μm	750μm±25μm
	4H-SI	750μm±15μm	750μm±25μm
Fa'asinomaga ole Wafer		Tu'u ese: 4.0° agai i le <1120 >±0.5° mo le 4H-N, I luga ole axis: <0001>±0.5° mo le 4H-SI
Micropipe Density	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Tete'e	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Primary Flat Orientation		{10-10} ±5.0°
Primary Flat Umi	4H-N	N/A
	4H-SI	Notch
Tuusaunoaga Tupito		3 mm
LTV/TTV/Bow/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Talatala		Polani Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Ta'eta'e Tu'u I le Malamalama Maualuluga Papatusi Hex I Malamalama Maualuga Maualuga Polytype Areas I le Malamalama Maualuga Vaaiga Carbon Inclusions Su'ega Sili Sili I luga o le Malamalama Maualuga		Leai Vaega fa'aopoopo ≤0.05% Leai Vaega fa'aopoopo ≤0.05% Leai			Fa'aputu umi ≤ 20 mm, tasi umi≤2 mm Vaega fa'aopoopo ≤0.1% Vaega fa'aopoopo≤3% Vaega fa'aopoopo ≤3% Fa'aopoopo umi≤1×wafer diameter
Tipi Chips E Malamalama Malosi Maualuga		Leai se faatagaina ≥0.2mm lautele ma loloto			7 faatagaina, ≤1 mm taitasi
(TSD) Fa'ase'e fa'avili fa'a filo		≤500 cm-2		N/A
(BPD) Fa'avae va'alele va'alele		≤1000 cm-2		N/A
Silicon Surface Contamination E le Malamalama Maualuga		Leai
afifiina		Tele-wafer kaseti po'o se atigi apa e tasi
Fa'amatalaga:
1 Fa'agata fa'aletonu e fa'atatau i luga atoa o ga'o masi se'i vagana ai le pito e fa'ate'aina. 2E tatau ona siaki na'o mata Si. 3 O fa'amaumauga fa'aletonu e na'o le KOH wafers ua togitogia.

Vaega Autu

1. Gafatia Gafatia ma Tulaga Tau: O le tele o le gaosiga o le 12-inch SiC substrate (12-inch silicon carbide substrate) e faailogaina ai se vaitau fou i le gaosiga o le semiconductor. Ole aofa'i o tupe meataalo e maua mai i le wafer e tasi e o'o ile 2.25 taimi nai lo le 8-inisi substrates, fa'aoso sa'o le oso i le gaosiga lelei. O fa'amatalaga a tagata fa'atau e fa'ailoa mai ai o le fa'aaogaina o substrate 12-inisi ua fa'aitiitia ai le tau o le gaosiga o masini eletise i le 28%, ma fa'atupuina ai se tulaga fa'atauva'a fa'atauva'a i le maketi o lo'o finau malosi.
2. Tulaga Fa'aletino Fa'aletino: O le 12-inisi SiC substrate fa'atosina uma tulaga lelei o mea carbide silicon - o lona conductivity vevela e 3 taimi o le silicon, ae o lona malepelepe fanua malosi e oʻo atu i le 10 taimi o le silicon. O nei uiga e mafai ai e masini e faʻavae i luga o le 12-inisi substrates e faʻagaioi lelei i siosiomaga maualuga-vevela e sili atu i le 200 ° C, e faʻapitoa ai mo le manaʻomia o talosaga e pei o taʻavale eletise.
3.Surface Togafitiga Tekinolosi: Ua matou atiina ae se tala fou chemical polesina (CMP) faagasologa faapitoa mo 12-inisi SiC substrates, ausia atomic-level surface flatness (Ra<0.15nm). O lenei lavelave e foia ai le luitau i le lalolagi atoa o le tele-diameter silicon carbide wafer surface treatment, faʻamama faʻalavelave mo le maualuga o le epitaxial tuputupu aʻe.
4.Thermal Pulega Fa'atinoga: I fa'atinoga fa'atino, 12-inisi SiC substrates fa'aalia le mata'ina o le fa'amamaina o le vevela. O faʻamaumauga o suʻega o loʻo faʻaalia ai i lalo o le malosi tutusa, o masini e faʻaogaina ai le 12-inisi substrates e faʻaogaina i le vevela 40-50 ° C maualalo ifo nai lo masini faʻavae silicon, faʻateleina le ola tautua meafaigaluega.

Talosaga Autu

1.New Energy Vehicle Ecosystem: O le 12-inch SiC substrate (12-inch silicon carbide substrate) o loʻo faʻafouina le fausaga eletise eletise eletise. Mai luga o uta (OBC) i le faʻaogaina o le taʻavale autu ma le faʻaogaina o maa, o le faʻaleleia lelei o le faʻaleleia o mea e 12-inisi e faʻateleina ai le taʻavale i le 5-8%. O lipoti mai se kamupani taʻutaʻua taʻutaʻua o loʻo faʻaalia ai o le faʻaaogaina o a matou mea e 12-inisi e faʻaitiitia ai le malosi o le malosi i totonu o le latou faʻaogaina vave i le 62%.
2. Fa'afouina Malosiaga Vaega: I le photovoltaic power stations, inverters e fa'avae i luga o le 12-inisi SiC substrates e le gata o lo'o fa'aalia ai mea laiti laiti ae fa'apea fo'i ona ausia le fa'aliliuga lelei e sili atu i le 99%. Aemaise lava i fa'asologa o fa'asologa fa'asoa, o lenei tulaga maualuga e fa'aliliuina i sefe fa'aletausaga o le selau afe o yuan i le pa'u eletise mo le au fa'afoe.
3.Industrial Automation: Fa'aliliuga fa'atele e fa'aaogaina 12-inisi substrates fa'aalia le lelei tele o fa'atinoga i robots fale gaosi oloa, masini masini CNC, ma isi masini. O latou uiga fa'afeso'ota'i maualuga e fa'aleleia ai le saoasaoa o le tali atu i le afi i le 30% a'o fa'aitiitia le fa'alavelave fa'aeletise i le tasi vaetolu o fofo masani.
4. Consumer Electronics Innovation: Ua amata ona faʻaaogaina e le tupulaga e sosoo ai le telefoni feaveaʻi o tekonolosi faʻapipiʻi 12-inisi SiC substrates. O loʻo faʻamoemoeina o oloa faʻapipiʻiina i luga aʻe o le 65W o le a suia atoa i vaifofo carbide silicon, faʻatasi ai ma substrates 12-inisi o loʻo faʻaalia e avea ma filifiliga sili ona lelei tau-faatinoga.

XKH Au'aunaga Fa'apitoa mo le 12-inisi SiC Substrate

Ina ia ausia manaoga faapitoa mo 12-inisi SiC substrates (12-inisi silicon carbide substrates), XKH ofo atu auaunaga lagolago atoatoa:
1.Thickness Customization:
Matou te tuʻuina atu 12-inisi substrates i faʻamatalaga mafiafia eseese e aofia ai le 725μm e faʻafetaui ai manaʻoga eseese.
2. Doping fa'atonuga:
O la matou gaosiga e lagolagoina le tele o ituaiga conductivity e aofia ai le n-ituaiga ma le p-ituaiga substrates, faʻatasi ai ma le faʻatonuina o le resistivity i le va o le 0.01-0.02Ω·cm.
3. Au'aunaga Su'ega:
Fa'atasi ai ma masini su'ega wafer-level atoatoa, matou te tu'uina atu lipoti atoa o asiasiga.
XKH malamalama o tagata fa'atau ta'itasi e iai mana'oga tulaga ese mo 12-inisi SiC substrates. O le mea lea matou te ofoina atu faʻataʻitaʻiga felagolagomai pisinisi fetuutuunai e tuʻuina atu fofo sili ona tauva, pe mo:
· Fa'ata'ita'iga R&D
· Volume gaosiga fa'atau
O a matou 'au'aunaga fa'apitoa e fa'amautinoa e mafai ona matou fa'amalieina ou mana'oga fa'apitoa fa'apitoa ma gaosiga mo 12-inisi SiC substrates.