8Inisi 200mm 4H-N SiC Wafer Conductive dummy su'esu'ega vasega
Ona o lona tulaga faʻapitoa faʻaletino ma mea faʻaeletoroni, 200mm SiC wafer semiconductor mea e faʻaaogaina e fatu ai le maualuga-faʻatinoga, maualuga-vevela, faʻavevela faʻavevela, ma masini eletise maualuga.8inch SiC substrate tau o loʻo faʻaitiitia malie aʻo faʻateleina le tekonolosi ma faʻatupulaia le manaʻoga.O atina'e fa'atekonolosi talu ai nei e o'o atu ai i le gaosiga o fua o le gaosiga o 200mm SiC wafers.O mea taua o le SiC wafer semiconductor mea faʻatusatusa i Si ma GaAs wafers: O le eletise eletise o le 4H-SiC i le taimi o le avalanche e sili atu nai lo le faʻatonuga o le maualuga maualuga atu nai lo tau tutusa mo Si ma GaAs.O lenei mea e taʻitaʻia ai se faʻaititia tele i luga o le setete resistivity Ron.Le maualalo i luga o le setete resistivity, faʻatasi ma le maualuga maualuga o loʻo i ai nei ma le vevela conductivity, faʻatagaina le faʻaogaina o tamaʻi oti mo masini eletise.O le maualuga o le vevela o le SiC e faʻaitiitia ai le faʻafefeteina o le pu.O mea faʻaeletoroni o masini e faʻavae i SiC wafers e matua mautu i le taimi ma luga ole vevela, lea e faʻamautinoa ai le maualuga o le faʻatuatuaina o oloa.Silicon carbide e matua teteʻe i faʻamalama malosi, lea e le faʻaleagaina ai mea faʻaeletoroni o le pu.Ole maualuga fa'atapula'aina o le vevela ole ga'o ole tioata (sili atu i le 6000C) e mafai ai ona e faia ni masini fa'atuatuaina tele mo tulaga fa'aletonu ma fa'aoga fa'apitoa.I le taimi nei, e mafai ona matou tuʻuina atu 200mmSiC wafers laʻititi ma faʻaauau pea ma maua ni faʻasoa i totonu o le faleteuoloa.
Fa'amatalaga
| Numera | Aitema | Vaega | Gaosiga | Suesuega | Faafoliga |
| 1. Parata | |||||
| 1.1 | polytype | -- | 4H | 4H | 4H |
| 1.2 | fa'asinomaga luga | ° | <11-20>4±0.5 | <11-20>4±0.5 | <11-20>4±0.5 |
| 2. Parakalafa eletise | |||||
| 2.1 | dopant | -- | n-ituaiga Nitrogen | n-ituaiga Nitrogen | n-ituaiga Nitrogen |
| 2.2 | teteega | ohm ·cm | 0.015~0.025 | 0.01~0.03 | NA |
| 3. Parakalafa fa'ainisinia | |||||
| 3.1 | lautele | mm | 200±0.2 | 200±0.2 | 200±0.2 |
| 3.2 | mafiafia | μm | 500±25 | 500±25 | 500±25 |
| 3.3 | Fa'asinomaga notch | ° | [1- 100]±5 | [1- 100]±5 | [1- 100]±5 |
| 3.4 | Notch Deep | mm | 1~1.5 | 1~1.5 | 1~1.5 |
| 3.5 | LTV | μm | ≤5(10mm*10mm) | ≤5(10mm*10mm) | ≤10(10mm*10mm) |
| 3.6 | TTV | μm | ≤10 | ≤10 | ≤15 |
| 3.7 | punou | μm | -25~25 | -45~45 | -65~65 |
| 3.8 | A'ai | μm | ≤30 | ≤50 | ≤70 |
| 3.9 | AFM | nm | Ra≤0.2 | Ra≤0.2 | Ra≤0.2 |
| 4. Fa'atulagaga | |||||
| 4.1 | micropipe density | ea/cm2 | ≤2 | ≤10 | ≤50 |
| 4.2 | mea uamea | atoms/cm2 | ≤1E11 | ≤1E11 | NA |
| 4.3 | TSD | ea/cm2 | ≤500 | ≤1000 | NA |
| 4.4 | BPD | ea/cm2 | ≤2000 | ≤5000 | NA |
| 4.5 | TED | ea/cm2 | ≤7000 | ≤10000 | NA |
| 5. Tulaga lelei | |||||
| 5.1 | luma | -- | Si | Si | Si |
| 5.2 | fa'ai'uga luga | -- | Si-foliga CMP | Si-foliga CMP | Si-foliga CMP |
| 5.3 | fasimea | ea/wafer | ≤100(tele≥0.3μm) | NA | NA |
| 5.4 | maosi | ea/wafer | ≤5, Aofa'i Length≤200mm | NA | NA |
| 5.5 | pito tupe meataalo/indents/ta'e/pisa/faaleagaina | -- | Leai | Leai | NA |
| 5.6 | Polytype vaega | -- | Leai | Vaega ≤10% | Vaega ≤30% |
| 5.7 | makaina i luma | -- | Leai | Leai | Leai |
| 6. Tu'u lelei | |||||
| 6.1 | i tua | -- | C-foliga MP | C-foliga MP | C-foliga MP |
| 6.2 | maosi | mm | NA | NA | NA |
| 6.3 | pito faaletonu tua chips/indents | -- | Leai | Leai | NA |
| 6.4 | Talatala tua | nm | Ra≤5 | Ra≤5 | Ra≤5 |
| 6.5 | Faailoga i tua | -- | Notch | Notch | Notch |
| 7. Tupito | |||||
| 7.1 | pito | -- | Chamfer | Chamfer | Chamfer |
| 8. afifi | |||||
| 8.1 | afifiina | -- | Epi-sauni ma le gaogao afifiina | Epi-sauni ma le gaogao afifiina | Epi-sauni ma le gaogao afifiina |
| 8.2 | afifiina | -- | Tele-wafer afifiina o kaseti | Tele-wafer afifiina o kaseti | Tele-wafer afifiina o kaseti |
Auiliili Ata
