4 inisi Safaira Wafer C-Vaeleele SSP/DSP 0.43mm 0.65mm
Talosaga
● Suʻega tuputupu aʻe mo vaega III-V ma II-VI.
● Fa'aeletonika ma optoelectronics.
● IR talosaga.
● Silicon On Sapphire Integrated Circuit(SOS).
● Leitio Fa'asao Fa'atasi (RFIC).
I le gaosiga o le LED, o loʻo faʻaaogaina sapphire wafers e fai ma sui mo le tuputupu aʻe o tioata gallium nitride (GaN), e faʻamalama pe a faʻaogaina se eletise eletise.O le Safaira o se mea faʻapipiʻi lelei mo le tuputupu aʻe o le GaN ona o loʻo i ai se fausaga tioata tutusa ma le faʻalauteleina o le vevela i le GaN, lea e faʻaitiitia ai faʻaletonu ma faʻaleleia le tulaga tioata.
I optics, sapphire wafers e faʻaaogaina e fai ma faʻamalama ma tioata i le maualuga o le mamafa ma le maualuga o le vevela, faʻapea foʻi ma le faʻaogaina o ata infrared, ona o le maualuga o le manino ma le faigata.
Fa'amatalaga
| Aitema | 4-inisi C-vaalele(0001) 650μm Safaira Wafers | |
| Mea tioata | 99,999%, Mama maualuga, Monocrystalline Al2O3 | |
| Vasega | Palemia, Epi-Sauni | |
| Fa'asagaga i luga | C-vaalele(0001) | |
| C-vaalele ese-matamata agai i M-axis 0.2 +/- 0.1° | ||
| Diamita | 100.0 mm +/- 0.1 mm | |
| mafiafia | 650 μm +/- 25 μm | |
| Primary Flat Orientation | A-vaalele(11-20) +/- 0.2° | |
| Primary Flat Umi | 30.0 mm +/- 1.0 mm | |
| Ituaiga Tasi Faila | Laufanua Luma | Epi-poila, Ra <0.2 nm (e AFM) |
| (SSP) | Laufanua i tua | eleele lelei, Ra = 0.8 μm i le 1.2 μm |
| Faila Itulua | Laufanua Luma | Epi-poila, Ra <0.2 nm (e AFM) |
| (DSP) | Laufanua i tua | Epi-poila, Ra <0.2 nm (e AFM) |
| TTV | <20 μm | |
| FUA | <20 μm | |
| WARP | <20 μm | |
| Fa'amama / Fa'auma | Vasega 100 fa'amamaina potu mama ma fa'apipi'i gaogao, | |
| 25 fasi pepa i totonu o le kaseti faʻapipiʻi e tasi poʻo le afifiina o le fasi pepa e tasi. | ||
afifiina ma uta
I se tulaga lautele, matou te tuʻuina atu le afifi e 25pcs pusa kaseti;e mafai fo'i ona matou fa'aputuina i se atigipusa mama e tasi i lalo ole 100 potu fa'amamaina vasega e tusa ai ma mana'oga a le tagata o tausia.
Auiliili Ata
