150mm 6 inisi 0.7mm 0.5mm Safaira Wafer Substrate Lavea C-vaalele SSP/DSP

150mm 6 inisi 0.7mm 0.5mm Safaira Wafer Substra Carrier C-Vaeleele SSP/DSP Ata Fa'aalia

Fa'amatalaga Puupuu:

O mea uma o loʻo i luga o faʻamatalaga saʻo ia o tioata safaira.O le faʻatinoga sili ona lelei o le tioata safaira e faʻaaogaina lautele i matata faʻapitoa maualuga.Faatasi ai ma le televave o atinaʻe o le LED alamanuia, o le manaʻoga mo mea tioata safaira ua faʻateleina foi.

Auina imeli ia matou

Fa'amatalaga Oloa

Faailoga o oloa

Talosaga

Talosaga mo 6-inisi safaira wafers e aofia ai:

1. LED gaosiga: safaira wafer e mafai ona faʻaaogaina e fai ma sui o chips LED, ma o lona maʻaʻa ma le faʻafefe faʻafefe e mafai ona faʻaleleia ai le mautu ma le ola tautua o meataalo LED.

2. Laser gaosiga: Sapphire wafer e mafai foi ona faʻaaogaina e fai ma sui o le laser, e fesoasoani e faʻaleleia le faʻatinoga o le laser ma faʻaumiumi le ola tautua.

3. Semiconductor gaosiga: Sapphire wafers o loʻo faʻaaogaina lautele i le gaosiga o masini faʻaeletoroni ma optoelectronic, e aofia ai le faʻaogaina o mea faʻapipiʻi, solar cell, masini eletise eletise, ma isi.

4. Isi talosaga: Sapphire wafer e mafai foi ona faʻaaogaina e gaosia ai le paʻi paʻi, masini faʻapipiʻi, ata manifinifi sola sela ma isi oloa tekonolosi.

Fa'amatalaga

Meafaitino	Ole tioata tasi ole Al2O3 mama, ole safaira wafer.
Fua	150 mm +/- 0.05 mm, 6 inisi
mafiafia	1300 +/- 25 um
Fa'atonuga	C vaalele (0001) ese M (1-100) vaalele 0.2 +/- 0.05 tikeri
Primary flat orientation	O se vaalele +/- 1 tikeri
Muamua mafolafola umi	47.5 mm +/- 1 mm
Aofa'iga Mafia Eseese (TTV)	<20 um
punou	<25 um
A'ai	<25 um
Coefficient Fa'alauteleina o le vevela	6.66 x 10-6 / °C e tutusa ma le C, 5 x 10-6 /°C e sa'o ile C axis
Malosiaga Dielectric	4.8 x 105 V/cm
Dielectric tumau	11.5 (1 MHz) i le C axis, 9.3 (1 MHz) fa'asaga i le C axis
Dielectric Loss Tangent (fa'aigoa fa'ameamea)	itiiti ifo i le 1 x 10-4
Amioga vevela	40 W/(mK) ile 20℃
Faila	tasi itu polesi (SSP) po lua itu polesi (DSP) Ra <0.5 nm (e AFM).O le pito i tua o le SSP wafer sa lelei le eleele i Ra = 0.8 - 1.2 um.
Tuuina atu	88% +/-1 % @460 nm