12 inisi SiC Substrate N Ituaiga Lapopo'a Tele Talosaga RF Fa'atinoga

12 inisi SiC Substrate N Ituaiga Lapopo'a Lapo'a Maualuga Fa'atinoga RF Talosaga Fa'aalia Ata

Fa'amatalaga Puupuu:

O le 12-inisi SiC substrate o loʻo faʻatusalia ai se alualu i luma o le eleele i tekinolosi mea semiconductor, ofoina atu faʻamanuiaga suiga mo eletise eletise ma faʻaoga maualuga. I le avea ai o le alamanuia silicon carbide wafer format fa'atau, o le 12-inisi SiC substrate e mafai ai ona fa'atupuina le tamaoaiga o fua a'o fa'atumauina le tulaga lelei o mea o le vaeluaga o uiga ma mea fa'apitoa fa'avela. Pe a fa'atusatusa ile 6-inisi pe la'ititi SiC wafers, o le 12-inch platform e tu'uina atu ai le 300% sili atu avanoa fa'aoga i le wafer, fa'ateleina le fa'atupuina o mate ma fa'aitiitia tau o gaosiga mo masini eletise. O le suiga tele lea e atagia mai ai le fa'asolosolo fa'asolopito o u'amea wafers, lea na fa'atupuina ai le fa'aitiitiga o le ta'ele ta'itasi ma fa'aitiitiga taua ma le fa'aleleia atili o galuega. O le 12-inisi SiC substrate's sili conductivity vevela (toetoe lava 3x lena o le silikoni) ma le maualuga tulaga malepelepe malosi fanua faʻapitoa e taua tele mo le isi augatupulaga 800V eletise eletise, lea e mafai ai ona sili atu le faʻaogaina ma le lelei o le eletise. I totonu ole atina'e 5G, o le maualuga o le saosaoa o le eletise eletise e mafai ai e masini RF ona fa'agaoioia i laina maualuga ma maualalo le gau. O le feso'ota'iga a le mea'ai ma mea fa'apipi'i fa'apipi'i e fa'afaigofie ai le fa'aogaina o fa'agamea o lo'o iai, e ui ina mana'omia le fa'apitoa ona o le ma'a'a tele o le SiC (9.5 Mohs). A'o fa'atupula'ia le aofa'i o le gaosiga, o le 12-inisi SiC substrate e fa'amoemoe e avea ma tulaga fa'atauva'a mo fa'aoga maualuga-malosi, fa'aosoina mea fou i totonu o ta'avale, malosi fa'afouina, ma faiga fa'aliliuga eletise.

Auina imeli ia matou

Fa'amatalaga Oloa

Faailoga o oloa

Fa'agata fa'atekinisi

12 inisi Silicon Carbide (SiC) Substrate Fa'amatalaga
Vasega		ZeroMPD Gaosiga Vasega(Z Vasega)	Gaosiga Fa'ata'atia Vasega(P Vasega)		Fa'ailoga Tulaga (D Vasega)
Diamita		3 0 0 mm~1305mm
mafiafia	4H-N	750μm±15μm	750μm±25μm
	4H-SI	750μm±15μm	750μm±25μm
Fa'asinomaga ole Wafer		Tu'u ese: 4.0° agai i le <1120 >±0.5° mo le 4H-N, I luga ole axis: <0001>±0.5° mo le 4H-SI
Micropipe Density	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Tete'e	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Primary Flat Orientation		{10-10} ±5.0°
Primary Flat Umi	4H-N	N/A
	4H-SI	Notch
Tuusaunoaga Tupito		3 mm
LTV/TTV/Bow/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Talatala		Polani Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Ta'eta'e Tu'u I le Malamalama Maualuluga Papatusi Hex I Malamalama Maualuga Maualuga Polytype Areas I le Malamalama Maualuga Vaaiga Carbon Inclusions Su'ega Sili Sili I luga o le Malamalama Maualuga		Leai Vaega fa'aopoopo ≤0.05% Leai Vaega fa'aopoopo ≤0.05% Leai			Fa'aputu umi ≤ 20 mm, tasi umi≤2 mm Vaega fa'aopoopo ≤0.1% Vaega fa'aopoopo≤3% Vaega fa'aopoopo ≤3% Fa'aopoopo umi≤1×wafer diameter
Tipi Chips E Malamalama Malosi Maualuga		Leai se faatagaina ≥0.2mm lautele ma loloto			7 faatagaina, ≤1 mm taitasi
(TSD) Fa'ase'e fa'avili fa'a filo		≤500 cm-2		N/A
(BPD) Fa'avae va'alele va'alele		≤1000 cm-2		N/A
Silicon Surface Contamination E le Malamalama Maualuga		Leai
afifiina		Tele-wafer kaseti po'o se atigi apa e tasi
Fa'amatalaga:
1 Fa'agata fa'aletonu e fa'atatau i luga atoa o ga'o masi se'i vagana ai le pito e fa'ate'aina. 2E tatau ona siaki na'o mata Si. 3 O fa'amaumauga fa'aletonu e na'o le KOH wafers ua togitogia.

Vaega Autu

1. Large Size Advantage: O le 12-inch SiC substrate (12-inch silicon carbide substrate) e ofoina atu le tele o le tasi-wafer area, e mafai ai ona sili atu tupe meataalo e gaosia i le wafer, ma faʻaitiitia ai tau o gaosiga ma faʻateleina fua.
2. Mea Maualuga Maualuga: O le maualuga o le vevela o le Silicon carbide ma le maualuga o le malepelepe malosi o le fanua e faʻaogaina ai le substrate 12-inisi mo le maualuga-voltage ma le tele o taimi, e pei o le EV inverters ma le faʻapipiʻiina vave.
3. Faʻagasologa Faʻatasi: E ui lava i le maualuga o le faigata ma le faʻagasologa o luʻitau o le SiC, o le 12-inch SiC substrate e maua ai faʻaletonu pito i lalo e ala i le faʻaogaina o le tipiina ma le faʻalelei, faʻaleleia le gaosiga o masini.
4. Pulea Maualuga Maualuga: Faʻatasi ai ma le sili atu o le faʻaogaina o le vevela nai lo mea faʻavae silicon, o le 12-inch substrate e faʻafeiloaʻi lelei ai le faʻafefe o le vevela i masini maualuga, faʻalauteleina le ola o meafaigaluega.

Talosaga Autu

1. Taavale eletise: O le 12-inch SiC substrate (12-inch silicon carbide substrate) o se vaega autu o le isi augatupulaga eletise eletise, e mafai ai ona faʻaogaina le tele o mea faʻaleleia e faʻaleleia ai le vaʻaia ma faʻaitiitia le taimi o le tau.

2. 5G Base Stations: SiC substrates tetele-tele e lagolago ai masini RF maualuga, faʻafeiloaʻi manaʻoga o nofoaga autu 5G mo le malosi maualuga ma maualalo le gau.

3.Sapalai Malosiaga Fa'ainisinia: I totonu o le la inverters ma smart grids, o le substrate 12-inisi e mafai ona tatalia voltage maualuga a'o fa'aitiitia le malosi.

4. Consumer Electronics: O lo'o fa'atau vave ma sapalai eletise nofoaga autu o fa'amatalaga e mafai ona fa'aaogaina 12-inisi SiC substrates e ausia ai le lapo'a fa'atusatusa ma le maualuga maualuga.

Au'aunaga a le XKH

Matou te faʻapitoa i auaunaga faʻapitoa mo le gaosiga o le 12-inisi SiC substrates (12-inisi silicon carbide substrates), e aofia ai:
1. Dicing & Polishing: La'ititi-fa'aleagaina, maualuga-flatness substrate faagasologa e fetaui ma manaoga o tagata faatau, fa'amautinoa le fa'atinoina o masini mautu.
2. Epitaxial Growth Support: Au'aunaga wafer epitaxial maualuga maualuga e faatelevave ai le gaosiga o chip.
3. Laiti-Batch Prototyping: Lagolago R&D fa'amaonia mo fa'alapotopotoga su'esu'e ma atina'e, fa'apu'upu'u ta'amilosaga atina'e.
4. Faufautua Fa'atekinisi: Fa'ai'uga fa'ai'uga fa'ai'uga mai le filifilia o meafaitino e fa'agasolo ai fa'atonuga, fesoasoani i tagata fa'atau e fa'ato'ilaloina lu'itau fa'agaioiga SiC.
Pe mo le tele o gaosiga poʻo faʻapitoa faʻapitoa, o matou 12-inisi SiC substrate 'auʻaunaga e fetaui ma au galuega faʻatino, faʻamalosia le alualu i luma faatekinolosi.