2 inisi 50.8mm Safaira Wafer C-Vaeleele M-vaalele R-vaalele A-vaalele Mafiafia 350um 430um 500um

2 inisi 50.8mm Safaira Wafer C-Vaeleele M-vaalele R-vaalele A-vaalele Mafiafia 350um 430um 500um Ata Fa'aalia

Fa'amatalaga Puupuu:

O le Safaira o se mea o se tuufaatasiga tulaga ese o mea faitino, vailaʻau ma mea faʻapitoa, lea e mafai ai ona faʻasaʻo i le maualuga o le vevela, teʻi vevela, vai ma oneone tafi, ma le sasa.

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Fa'amatalaga Oloa

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Fa'amatalaga o fa'atonuga eseese

Fa'atonuga	C(0001)-Axis		R(1-102)-Axis		M(10-10) -Axis	A(11-20)-Axis
Meatotino faaletino	O le C axis e iai le malamalama tioata, ae o isi tu'i e iai le malamalama leaga. Vaalele C e mafolafola, e sili ona tipi.		R-vaalele e sili atu le malosi nai lo le A.		M vaalele e laa serrated, e le faigofie ona tipi, faigofie ona tipi.	O le maaa o le A-vaalele e sili atu le maualuga nai lo le C-vaalele, lea e faʻaalia i le ofuina o le teteʻe, teteʻe ma le maaa maualuga; Itu A-vaalele o se vaalele zigzag, lea e faigofie ona tipi;
Talosaga	C-oriented safaira substrates e faʻaaogaina e faʻatupu ai III-V ma II-VI faʻapipiʻi ata, e pei o le gallium nitride, lea e mafai ona maua ai mea lanu lanumoana, laser diodes, ma infrared detector applications. E mafua ona o le faʻagasologa o le tuputupu aʻe o le tioata safaira i luga o le C-axis ua matua, o le tau e maualalo, o mea faʻaletino ma vailaʻau e mautu, ma le tekonolosi o le epitaxy i luga o le C-vaalele e matua ma mautu.		R-oriented substrate tuputupu aʻe o eseʻese kaisa extrasystals teuina, faʻaaogaina i microelectronics integrated circuits. E le gata i lea, e mafai foʻi ona faʻapipiʻiina faʻasalalauga faʻapipiʻi maualuga ma masini faʻamalosi i le faagasologa o le gaosiga o ata o le tuputupu aʻe o le silicon epitaxial. R-ituaiga substrate e mafai foi ona faaaoga i le gaosiga o le taʻitaʻia, isi vaega superconducting, tetee tetee maualuga, gallium arsenide.		E masani ona faʻaaogaina e faʻatupu ai ata epitaxial e le polar / semi-polar GaN e faʻaleleia ai le faʻaleleia o le malamalama.	A-faʻatatau i le substrate e maua ai se toniga permittivity/medium, ma se tikeri maualuga o le insulation o loʻo faʻaaogaina i tekonolosi microelectronics hybrid. E mafai ona gaosia le maualuga o le vevela superconductors mai tioata faʻalautele A-base.
Fa'atonuga gafatia	Mamanu Safaira Substrate (PSS): I le tulaga o le Tuputupu ae po o le Etching, nanoscale patino mamanu microstructure masani ua mamanuina ma faia i luga o le substrate safaira e pulea ai le foliga malamalama o le LED, ma faaitiitia le eseesega faaletonu i le GaN tuputupu ae i luga o le substrate safaira. , faʻaleleia le lelei o le epitaxy, ma faʻaleleia le faʻaogaina o le faʻaogaina o le LED ma faʻateleina le faʻaogaina o le malamalama. E le gata i lea, o le sapphire prism, faʻata, tioata, pu, cone ma isi vaega faʻavae e mafai ona faʻapipiʻiina e tusa ai ma manaoga o tagata faatau.
Ta'utinoga o meatotino	Malosi	Malosi	mea liusuavai	Fa'asinomaga fa'asa (va'aia ma infrared)	Tu'u atu (DSP)	Dielectric tumau
Ta'utinoga o meatotino	3.98g/cm3	9(mohs)	2053 ℃	1.762~1.770	≥85%	11.58@300K ile C axis(9.4 ile A axis)

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