3inch SiC substrate Gaosiga Dia76.2mm 4H-N

Fa'amatalaga Puupuu:

O le 3-inisi Silicon Carbide 4H-N wafer o se mea semiconductor sili atu, ua fuafuaina faapitoa mo le maualuga-faatinoga faaeletonika ma optoelectronic applications.Renowned mo ona tulaga tulaga ese faaletino ma le eletise, o lenei wafer o se tasi o mea taua i le fanua o le eletise eletise. .

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Fa'amatalaga Oloa

Faailoga o oloa

O uiga autu o 3 inisi silicon carbide mosfet wafers e pei ona taua i lalo;

Silicon Carbide (SiC) o se mea lautele-bandgap semiconductor mea, faʻaalia i le maualuga o le vevela, le maualuga o le eletise eletise, ma le maualuga o le malosi o le eletise eletise. O nei meatotino e tulaga ese ai siC wafers i faʻaoga maualuga, maualuga, ma maualuga-vevela. Aemaise lava i le 4H-SiC polytype, o lona fausaga tioata e maua ai le faʻaogaina lelei o le eletise, ma avea ai ma mea e filifilia mo masini eletise eletise.

O le 3-inisi Silicon Carbide 4H-N wafer o se fa'ama'i fa'ato'aga fa'ama'i fa'amasani fa'atasi ma le fa'aulu o le N-type. O lenei metotia o le doping e maua ai e le wafer le maualuga o le eletise eletise, ma faʻaleleia ai le faʻatinoina o le masini. Ole tele ole wafer, ile 3 inisi (diameter o le 76.2 mm), o se fua masani faʻaaogaina i totonu ole alamanuia semiconductor, talafeagai mo gaioiga eseese o gaosiga.

O le 3-inisi Silicon Carbide 4H-N wafer e gaosia e faʻaaoga ai le Physical Vapor Transport (PVT) metotia. O lenei faiga e aofia ai le suia o le paʻu SiC i tioata taʻitasi i le maualuga o le vevela, faʻamautinoaina le lelei tioata ma le tutusa o le wafer. E le gata i lea, o le mafiafia o le wafer e masani lava e tusa ma le 0.35 mm, ma o lona pito e faʻapipiʻiina i le lua itu e faʻafefeteina e ausia ai se maualuga maualuga o le mafolafola ma le lamolemole, lea e taua tele mo le gaosiga mulimuli o semiconductor.

O le faʻaogaina o le 3-inisi Silicon Carbide 4H-N wafer e lautele, e aofia ai masini eletise eletise, masini eletise maualuga, masini RF, ma masini optoelectronic. O lona fa'atinoga lelei ma le fa'atuatuaina e mafai ai e nei masini ona fa'agaoioia i lalo o tulaga ogaoga, fa'amalieina le mana'oga mo mea semiconductor maualuga fa'atinoga i alamanuia fa'aeletonika fa'aonaponei.

E mafai ona matou tuʻuina atu le 4H-N 3inch SiC substrate, togi eseese o mea faʻapipiʻi faʻasoa. E mafai foi ona matou faʻatulagaina customization e tusa ai ma ou manaʻoga. Fa'afeiloa'i su'esu'ega!