4H-N 4 inisi SiC substrate wafer Silicon Carbide Production Dummy Research grade

4H-N 4 inisi SiC substrate wafer Silicon Carbide Gaosia Dummy Su'esu'ega vasega Ata Fa'aalia

Fa'amatalaga Puupuu:

4-inisi silicon carbide tasi tioata substrate wafer o se mea maualuga-faatinoga ma meatotino tulaga ese faaletino ma vailaau. O lo'o faia i le silicon carbide carbide tasi mea tioata ma sili atu le lelei o le vevela, mautu fa'ainisinia ma le maualuga o le vevela. Faʻafetai i lona faʻatonuga maualuga o le sauniuniga ma mea e sili ona lelei, o lenei vaʻa o se tasi o mea e sili ona fiafia i ai mo le saunia o masini eletise maualuga i le tele o matata.

Auina imeli ia matou

Fa'amatalaga Oloa

Faailoga o oloa

Talosaga

4-inisi silicon carbide tasi tioata substrate wafers faia se sao taua i le tele o fanua. Muamua, e faʻaaogaina lautele i totonu o le semiconductor alamanuia i le sauniuniga o masini eletise eletise maualuga e pei o transistors eletise, fesoʻotaʻiga tuʻufaʻatasia ma modules eletise. O le maualuga o le vevela ma le maualuga o le vevela e mafai ai ona faʻamalo lelei le vevela ma maua ai le sili atu o le galue ma le faʻamaoni. Lona lua, o lo'o fa'aogaina fo'i fa'ama'i carbide silicon i le fanua su'esu'e e faia ai su'esu'ega i mea fou ma masini. E le gata i lea, o faʻamaʻi carbide silicon e masani ona faʻaaogaina i optoelectronics, e pei o le gaosiga o le leds ma laser diodes.

O faʻamatalaga o le 4inch SiC wafer

4-inisi silicon carbide tasi tioata substrate wafer diameter o 4 inisi (e uiga i 101.6mm), faauma luga i Ra <0.5 nm, mafiafia o 600±25 μm. O le conductivity o le wafer o le ituaiga N poʻo le ituaiga P ma e mafai ona faʻatulagaina e tusa ai ma manaʻoga o tagata faʻatau. E le gata i lea, o loʻo i ai foi i le puʻupuʻu le faʻamautuina lelei o masini, e mafai ona tatalia se aofaʻi o le mamafa ma le vibration.

inisi silicon carbide tasi tioata substrate wafer o se mea maualuga-faatinoga lautele faaaogaina i semiconductor, suesuega ma optoelectronics fanua. O loʻo i ai le faʻaleleia lelei o le vevela, faʻamautu faʻainisinia ma le maualuga o le vevela, lea e talafeagai mo le saunia o masini eletise eletise ma suʻesuʻega o mea fou. Matou te ofoina atu le tele o faʻamatalaga ma filifiliga faʻapitoa e faʻafetaui ai le tele o manaʻoga o tagata faʻatau. Fa'amolemole fa'alogo i la matou 'upega tafa'ilagi tuto'atasi e a'oa'o atili e uiga i fa'amatalaga o oloa o fa'ama'i carbide silicon.

Galuega autu: Silicon carbide wafers, silicon carbide one crystal substrate wafers, 4 inisi, faʻavevela vevela, mautu faʻainisinia, maualuga maualuga le vevela, transistors eletise, fesoʻotaʻiga tuʻufaʻatasia, modules eletise, taʻitaʻia, laser diodes, faʻamaeʻa luga, conductivity, filifiliga masani.