4inch SiC Epi wafer mo MOS poʻo SBD

Fa'amatalaga Puupuu:

SiCC o loʻo i ai le SiC (Silicon Carbide) wafer substrate production line atoatoa, tuʻufaʻatasia le tuputupu aʻe tioata, faʻapipiʻiina, faʻapipiʻiina, faʻamalo, faʻamamaina ma suʻega.I le taimi nei, e mafai ona matou tuʻuina atu axial poʻo ese-axis semi-insulating ma semi-conductive 4H ma 6H SiC wafers ma lapopoa o 5x5mm2, 10x10mm2, 2″, 3″, 4″ ma 6″, talepeina e ala i le taofiofia faaletonu, gaosiga fatu tioata. ma le tuputupu aʻe vave ma isi Ua malepe i tekinolosi autu e pei o le taofiofia o faaletonu, gaosiga fatu tioata ma le tuputupu aʻe vave, ma faʻalauteleina le suʻesuʻega autu ma le atinaʻeina o le silicon carbide epitaxy, masini ma isi suʻesuʻega faʻavae e fesoʻotaʻi.

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Fa'amatalaga Oloa

Faailoga o oloa

Epitaxy o lo'o fa'atatau i le tuputupu a'e o se vaega o mea tioata tasi e sili atu le lelei i luga o se mea fa'apipi'i carbide silicon.Faatasi ai ma i latou, o le tuputupu aʻe o le gallium nitride epitaxial layer i luga o se semi-insulating silicon carbide substrate e taʻua o le heterogeneous epitaxy;o le tuputupu aʻe o se lapisi epitaxial silicon carbide i luga o le pito i luga o se substrate carbide conductive e taʻua o le epitaxy homogeneous.

Epitaxial e tusa ai ma manaoga mamanu masini o le tuputupu aʻe o le vaega autu o galuega, e tele lava ina fuafuaina le faatinoga o le pu ma le masini, le tau o le 23%.O auala autu o le SiC thin film epitaxy i lenei laasaga e aofia ai: vailaʻau vaʻa vevela (CVD), molecular beam epitaxy (MBE), vai vaega epitaxy (LPE), ma pulsed laser deposition ma sublimation (PLD).

Epitaxy ose feso'ota'iga taua tele i le alamanuia atoa.E ala i le fa'atupuina o le gaN epitaxial layers i luga o le semi-insulating silicon carbide substrates, GaN epitaxial wafers e fa'avae i luga o le silicon carbide e gaosia, lea e mafai ona fa'aopoopoina i le GaN RF masini e pei o transistors mobility eletise maualuga (HEMTs);

E ala i le tuputupu aʻe o le silicon carbide epitaxial layer i luga o le conductive substrate e maua ai le silicon carbide epitaxial wafer, ma i le epitaxial layer i luga o le gaosiga o Schottky diodes, auro-oxygen afa-field effect transistors, insulated gate bipolar transistors ma isi masini eletise, o lea o le lelei o le o le epitaxial i luga o le faatinoga o le masini e matua tele aafiaga i luga o le atinae o le alamanuia o loo taʻalo ai foi se matafaioi taua tele.