6 Inisi 4H SEMI Ituaiga SiC tu'ufa'atasi substrate Mafiafia 500μm TTV≤5μm MOS vasega

Fa'amatalaga Puupuu:

Faatasi ai ma le televave o le alualu i luma o fesootaiga 5G ma tekinolosi radar, o le 6-inisi semi-insulating SiC composite substrate ua avea ma mea autu mo le gaosiga o masini maualuga. Pe a faatusatusa i le gaAs substrates masani, o lenei substrate e faatumauina le maualuga o le resistivity (> 10⁸ Ω·cm) aʻo faʻaleleia le faʻaogaina o le vevela e sili atu i le 5x, faʻafeiloaʻi lelei luitau faʻafefe vevela i masini millimeter-galu. O mea faʻapipiʻi eletise i totonu o masini masani e pei o 5G smartphones ma satelite fesoʻotaʻiga faʻamau e ono fausia i luga o lenei mea. O le fa'aogaina o la matou fa'atekonolosi "buffer layer doping compensation", ua matou fa'aititia ai le tele o le micropipe i lalo ifo o le 0.5/cm² ma maua ai le gau o le microwave ultra-low o le 0.05 dB/mm.


Fa'amatalaga Oloa

Faailoga o oloa

Fa'agata fa'atekinisi

Aitema

Fa'amatalaga

Aitema

Fa'amatalaga

Diamita

150±0.2 mm

Luma (Si-foliga) talatala

Ra≤0.2 nm (5μm×5μm)

Polytype

4H

Tipi Tipi, Tala, Ta'e (su'esu'ega va'aia)

Leai

Tete'e

≥1E8 Ω·cm

TTV

≤5 μm

Fa'afesuia'i vaega Mafiafia

≥0.4 μm

A'ai

≤35 μm

Gaogao (2mm>D>0.5mm)

≤5 ea/Wafer

mafiafia

500±25 μm

Vaega Autu

1. Tulaga Maualuga Fa'atinoga Fa'atele
O le 6-inisi semi-insulating SiC composite substrate faʻaaogaina se faʻavasegaina o le dielectric layer design, faʻamautinoa le fesuiaiga faifaipea o le dielectric <2% i le Ka-band (26.5-40 GHz) ma faʻaleleia le tulaga tutusa i le 40%. 15% faʻateleina le lelei ma 20% faʻaititia le mana faʻaaogaina i T / R modules faʻaaogaina lenei mea.

2. Pulea Fa'avela
O se fausaga tu'ufa'atasi "laupapa fa'avela" e mafai ai ona fa'aosoina le vevela i le 400 W/m·K. I le 28 GHz 5G base station PA modules, o le vevela o le so'oga e na'o le 28°C e si'itia pe a mae'a le 24 itula o le fa'aauau pea-50°C lalo ifo nai lo fofo masani.

3. Tulaga lelei o le Wafer
E ala i se auala sili ona lelei o Felauaiga Ausa Faaletino (PVT), matou te ausia ai le mamafa o le vaeluaga <500/cm² ma le Aofa'iga o le Mafiafia (TTV) <3 μm.
4. Fa'agaio'iga Fa'ameaalofa
O la matou fa'agasologa fa'amauina leisa na fa'atupuina fa'apitoa mo le 6-inisi semi-insulating SiC mea fa'apipi'i fa'aitiitiga fa'aitiitiga tulaga maualuga i luga o fa'atonuga e lua a'o le'i epitaxy.

Talosaga Autu

1. 5G Base Station Core Vaega
I Massive MIMO antenna arrays, GaN HEMT masini i luga ole 6-inisi semi-insulating SiC substrates composite maua le 200W mana fa'aulu ma> 65% lelei. Ole su'ega ole fanua ile 3.5 GHz na fa'aalia ai le 30% fa'atuputeleina ole fa'asalalauga.

2. Faiga Feso'ota'iga Satelite
Low-Earth orbit (LEO) satelite transceivers faʻaaogaina lenei substrate faʻaalia le 8 dB maualuga EIRP i le Q-band (40 GHz) aʻo faʻaititia le mamafa i le 40%. SpaceX Starlink terminals ua faʻaaogaina mo le gaosiga tele.

3. Military Radar Systems
Fa'asologa fa'asologa o le radar T / R modules i luga o lenei substrate e maua ai le bandwidth 6-18 GHz ma le pisapisao e maualalo e pei o le 1.2 dB, fa'alauteleina le va'aiga i le 50 km i faiga fa'alauiloa vave.

4. Taavale Milimita-Galu Radar
79 GHz meataavale radar taʻavale faʻaaogaina lenei mea e faʻaleleia atili ai le faʻaiʻuga i le 0.5 °, faʻafeiloaʻi L4 manaʻoga taʻavale tutoʻatasi.

Matou te ofoina atu se fofo faʻapitoa faʻapitoa mo le 6-inisi semi-insulating SiC substrates composite. E tusa ai ma le faʻavasegaina o mea faʻapitoa, matou te lagolagoina le faʻatonuga tonu o le resistivity i totonu ole va o le 10⁶-10¹⁰ Ω·cm. Aemaise lava mo talosaga faamiliteli, e mafai ona tatou ofoina atu se filifiliga ultra-maualuga tetee o> 10⁹ Ω·cm. O loʻo ofoina atu faʻamatalaga mafiafia e tolu o le 200μm, 350μm ma le 500μm i le taimi lava e tasi, faʻatasi ai ma le faʻapalepale faʻatonuina i totonu ole ± 10μm, faʻafeiloaʻi manaoga eseese mai masini maualuga i luga ole mana.

E tusa ai ma faiga o togafitiga i luga o le eleele, matou te ofoina atu ni fofo faʻapolofesa se lua: Chemical Mechanical Polishing (CMP) e mafai ona ausia le faʻamafolaina o le atomic-level ma Ra<0.15nm, faʻafeiloaʻi manaʻoga epitaxial tuputupu aʻe sili ona faigata; Ole epitaxial ready surface treatment technology mo le gaosiga vave mana'omia e mafai ona maua ai luga ole ultra-smooth ile Sq<0.3nm ma le mafiafia ole oxide totoe <1nm, fa'afaigofieina le fa'agasologa o le mua'i togafiti ile fa'ai'uga a le kalani.

O lo'o tu'uina atu e le XKH ni fofo fa'apitoa fa'apitoa mo le 6-inisi semi-insulating SiC substrates composite

1. Mea Fa'asinomaga Fa'asinomaga
Matou te ofoina atu le faʻalogoina o le resistivity saʻo i totonu ole laina ole 10⁶-10¹⁰ Ω·cm, faʻatasi ai ma filifiliga faʻapitoa ultra-maualuga resistivity> 10⁹ Ω·cm avanoa mo talosaga militeri/aerospace.

2. Mafiafia Fa'amatalaga
Tolu fa'avasegaina mafiafia filifiliga:

· 200μm (fa'amalieina mo masini maualuga-televave)

· 350μm (fa'amatalaga masani)

· 500μm (faʻatulagaina mo talosaga maualuga-malosi)
· O fesuiaiga uma e faatumauina tolerances mafiafia mafiafia o ± 10μm.

3. Fa'atekonolosi Togafitiga i luga

Faila Mechanical Chemical (CMP): Ausia le tulaga atomic luga mafolafola ma Ra<0.15nm, faʻafeiloaʻi malosi epitaxial tuputupu ae manaoga mo RF ma masini eletise.

4. Epi-Sauni Laufanua Fa'atonuga

· Tu'uina atu mea e sili ona lamolemole ma Sq<0.3nm talatala

· Puleaina le mafiafia o le oxide moni i le <1nm

· Fa'ate'aina e o'o atu i le 3 la'asaga a'o le'i fa'agaioiina i fale fa'atau

6-inisi semi-insulating SiC mea'ai tu'ufa'atasi 1
6-inisi semi-insulating SiC mea'ai tu'ufa'atasi 4

  • Muamua:
  • Sosoo ai:

  • Tusi lau savali iinei ma lafo mai ia i matou