6 inisi-8 inisi LN-on-Si Composite Substrate Mafiafia 0.3-50 μm Si/SiC/Safaira o Mea

Fa'amatalaga Puupuu:

O le 6-inisi i le 8-inisi LN-on-Si substrate composite o se mea maualuga-faatinoga o loʻo tuʻufaʻatasia tasi-crystal lithium niobate (LN) ata manifinifi ma silicon (Si) substrates, ma mafiafia e amata mai le 0.3 μm i le 50 μm. Ua mamanuina mo semiconductor alualu i luma ma optoelectronic masini faiga. O le fa'aogaina o le fa'aogaina o feso'ota'iga po'o le fa'atupuina o le epitaxial, o lenei mea e fa'amautinoa ai le maualuga o le tioata o le ata manifinifi LN a'o fa'aogaina le tele o le wafer (6-inisi i le 8-inisi) o le silicon substrate e fa'aleleia ai le gaosiga lelei ma le tau-lelei.
Fa'atusatusa i mea masani LN tele, o le 6-inisi i le 8-inisi LN-on-Si substrate tu'ufa'atasi e ofoina atu le maualuga maualuga o le vevela ma le mautu fa'ainisinia, e talafeagai ai mo le fa'agaoioiga o le wafer-level lapopo'a. E le gata i lea, o isi mea faʻavae e pei o le SiC poʻo le safaira e mafai ona filifilia e faʻafetaui ai manaʻoga faʻapitoa, e aofia ai masini RF maualuga, faʻapipiʻi photonics, ma MEMS sensors.

Auina imeli ia matou

Fa'amatalaga Oloa

Faailoga o oloa

Fa'agata fa'atekinisi

0.3-50μm LN/LT i luga o Insulators
Laupapa pito i luga
Diamita	6-8 inisi
Fa'atonuga	X, Z, Y-42 ma isi.
Meafaitino	LT, LN
mafiafia	0.3-50μm
Fa'asa'o (Customized)
Mea	Si, SiC, Safaira, Spinel, Quartz

Vaega Autu

O le 6-inisi i le 8-inisi LN-on-Si substrate composite e iloga ona o mea faʻapitoa faʻapitoa ma faʻataʻitaʻiga tunable, e mafai ai ona faʻaogaina lautele i semiconductor ma optoelectronic alamanuia:

1. Large Wafer Compatibility: O le 6-inisi i le 8-inch wafer size e faʻamautinoa ai le tuʻufaʻatasia faʻatasi ma laina faʻapipiʻi semiconductor o loʻo i ai nei (faʻataʻitaʻiga, faiga CMOS), faʻaitiitia tau o gaosiga ma mafai ai le gaosiga tele.

2.High Crystalline Quality: Optimized epitaxial or bonding techniques mautinoa ai le maualalo o le faaletonu i le ata manifinifi LN, e faʻaogaina ai le maualuga o le faʻaogaina o masini faʻapipiʻi, faʻafefe o le galu (SAW), ma isi masini saʻo.

3.Adjustable Mafiafia (0.3-50 μm): Ultrathin LN layers (<1 μm) e fetaui lelei mo meataalo photonic tuʻufaʻatasia, ae o laupepa mafiafia (10-50 μm) e lagolagoina ai masini RF maualuga poʻo piezoelectric sensors.

4.Multiple Substrate Options: I le faaopoopo atu i le Si, SiC (maualuga le vevela conductivity) poʻo le safaira (maualuga insulation) e mafai ona filifilia e avea ma mea faʻavae e faʻafetaui ai manaʻoga o le maualuga-tele, maualuga-vevela, poʻo le maualuga-mana talosaga.

5.Thermal and Mechanical Stability: O le silicon substrate e maua ai le lagolago faʻainisinia malosi, faʻaitiitia le faʻafefe poʻo le taʻe i le taimi o le gaosiga ma le faʻaleleia o le gaosiga o masini.

O nei uiga fa'atūina le 6-inisi i le 8-inisi LN-on-Si substrate tu'ufa'atasi e fai ma mea e sili ona fiafia i ai mo tekonolosi fa'aonaponei e pei ole 5G feso'ota'iga, LiDAR, ma quantum optics.

Talosaga Autu

O le 6-inisi i le 8-inisi LN-on-Si substrate composite ua fa'aaogaina lautele i alamanuia maualuga-tekonolosi ona o lona tulaga ese electro-optic, piezoelectric, ma acoustic meatotino:

1.Optical Communications and Integrated Photonics: E mafai ai le televave o le eletise-optic modulators, waveguides, ma photonic integrated circuits (PICs), faʻafeiloaʻi manaoga o le bandwidth o nofoaga autu o faʻamatalaga ma fesoʻotaʻiga fiber-optic.

2.5G/6G RF Devices: O le maualuga o le piezoelectric coefficient o le LN e lelei mo le galu acoustic galu (SAW) ma le tele o galu acoustic (BAW) filiga, faʻaleleia le faʻaogaina o faailo i nofoaga autu 5G ma masini feaveaʻi.

3.MEMS ma Sensors: O le piezoelectric effect o le LN-on-Si e faʻafaigofie ai le maualuga o le faʻaogaina o le accelerometers, biosensors, ma le ultrasonic transducers mo faʻafomaʻi ma alamanuia talosaga.

4. Quantum Technologies: I le avea ai o se mea fa'apipi'i e le laina, o ata manifinifi LN o lo'o fa'aogaina i fa'apogai malamalama tele (fa'ata'ita'iga, pa'aga photon fa'apipi'i) ma meataalo fa'atasi.

5.Lasers ma Nonlinear Optics: Ultrathin LN layers e mafai ai ona lelei le gaosiga lua-harmonic (SHG) ma masini oscillation parametric (OPO) mo le gaosiga o le laser ma su'esu'ega spectroscopic.

O le fa'avasegaina 6-inisi i le 8-inisi LN-on-Si substrate tu'ufa'atasi e mafai ai ona gaosia nei masini i fa'amea fa'ato'aga tetele, fa'aitiitia ai le tau o le gaosiga.

Fa'asinomaga ma Au'aunaga

Matou te tuʻuina atu le lagolago faʻapitoa faʻapitoa ma auaunaga faʻapitoa mo le 6-inisi i le 8-inisi LN-on-Si mea faʻapipiʻi tuʻufaʻatasia e faʻafetaui ai R&D eseese ma manaʻoga gaosiga:

1.Custom Fabrication: LN mafiafia ata (0.3-50 μm), faʻasologa tioata (X-cut / Y-cut), ma mea substrate (Si / SiC / saphire) e mafai ona faʻaogaina e faʻaogaina ai le faʻaogaina o masini.

2.Wafer-Level Processing: Tuuina atu tele o 6-inisi ma 8-inisi wafers, e aofia ai auaunaga pito i tua e pei o dicing, polishing, ma le ufiufi, faʻamautinoa ua saunia substrates mo le tuufaatasia o masini.

3. Faʻatalanoaga Faʻatekinisi ma Suʻega: Faʻamatalaga o meafaitino (eg, XRD, AFM), suʻega faʻataʻitaʻiga eletise-optic, ma le fesoasoani faʻataʻitaʻiga masini e faʻavave ai le faʻamaoniaina o mamanu.

O la matou misiona o le faʻavaeina lea o le 6-inisi i le 8-inch LN-on-Si substrate composite e fai ma fofo autu mo faʻaoga optoelectronic ma semiconductor, ofoina atu le lagolago pito i luga mai le R&D i le gaosiga tele.

Fa'ai'uga

O le 6-inisi i le 8-inisi LN-on-Si composite substrate, faʻatasi ai ma lona lapoʻa lapoa, sili atu le lelei o meafaitino, ma le agavaʻa, o loʻo faʻauluina le alualu i luma i fesoʻotaʻiga faʻapitoa, 5G RF, ma tekinolosi quantum. Pe mo le tele o gaosiga po'o fofo fa'apitoa, matou te tu'uina atu mea'ai fa'atuatuaina ma auaunaga fa'aopoopo e fa'amalosia ai faiga fa'atekonolosi.