6 inisi Conductive tioata tasi SiC i polycrystalline SiC substrate tu'ufa'atasi le lautele 150mm P ituaiga N ituaiga

6 inisi Conductive tioata tasi SiC i luga o polycrystalline SiC substrate tu'ufa'atasi le lautele 150mm P ituaiga N ituaiga Ata Fa'aalia

Fa'amatalaga Puupuu:

O le 6-inisi monocrystalline SiC i luga o le polycrystalline SiC composite substrate o lo'o fa'atusalia ai se fa'afofoga fa'ameamea fou o le silicon carbide (SiC) ua fa'atulagaina mo masini fa'aeletonika maualuga-maualuga, maualuga-vevela, ma maualuga. O lenei mea fa'apipi'i e fa'aalia ai se fa'amaufa'ailoga SiC e tasi e fa'apipi'iina i se fa'avae polycrystalline SiC e ala i faiga fa'apitoa, tu'ufa'atasia mea tau eletise sili o monocrystalline SiC ma le tau lelei o le polycrystalline SiC.
Pe a faatusatusa i mea masani o le SiC monocrystalline, o le 6-inch conductive monocrystalline SiC i luga o le polycrystalline SiC composite substrate e faatumauina ai le maualuga o le eletise eletise ma le maualuga-voltage tetee ae matua faaitiitia tau gaosiga. O lona lapopoa 6-inisi (150 mm) e mautinoa ai le fetaui ma laina o lo'o i ai nei semiconductor gaosiga, mafai ai ona fa'aogaina le gaosiga. E le gata i lea, o le mamanu faʻataʻitaʻiga e mafai ai ona faʻaogaina saʻo i le gaosiga o masini eletise (faʻataʻitaʻiga, MOSFETs, diodes), faʻaumatia le manaʻoga mo faʻaopoopoga faʻagasologa o le doping ma faʻafaigofie le gaosiga o galuega.

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Fa'amatalaga Oloa

Faailoga o oloa

Fa'agata fa'atekinisi

Tele:	6 inisi
lapoa:	150 mm
Mafiafia:	400-500 μm
Monocrystalline SiC Parameters Ata Ata
Polytype:	4H-SiC poʻo le 6H-SiC
Fa'atosina o le Doping:	1×10¹⁴ - 1×10¹⁸ cm⁻³
Mafiafia:	5-20 μm
Pepa Tetee:	10-1000 Ω/sq
Fe'avea'i Electron:	800-1200 cm²/Vs
Avega o Pu:	100-300 cm²/Vs
Polycrystalline SiC Fa'asaga Fa'asaga Fa'asaga
Mafiafia:	50-300 μm
Amioga vevela:	150-300 W/m·K
Monocrystalline SiC Substrate Parameters
Polytype:	4H-SiC poʻo le 6H-SiC
Fa'atosina o le Doping:	1×10¹⁴ - 1×10¹⁸ cm⁻³
Mafiafia:	300-500 μm
Tele o Saito:	> 1 mm
Fa'asaa ole Laupapa:	<0.3mm RMS
Meatotino & Eletise
Malosi:	9-10 Mohs
Malosi fa'amalosi:	3-4 GPa
Malosi o le Tensile:	0.3-0.5 GPa
Malosi o fanua malepe:	> 2 MV/cm
Fa'apalepale Aofa'iga:	> 10 Mrad
Tete'e A'afiaga Tasi Tasi:	> 100 MeV·cm²/mg
Amioga vevela:	150-380 W/m·K
Fa'agaoioi Va'a vevela:	-55 i le 600°C

Uiga Autu

O le 6-inisi conductive monocrystalline SiC i luga o le polycrystalline SiC composite substrate e ofoina atu se paleni tulaga ese o le fausaga o meafaitino ma le faatinoga, e talafeagai ai mo siosiomaga faigata tau pisinisi:

1.Cost-Effectiveness: O le polycrystalline SiC base e matua faʻaitiitia ai tau pe a faʻatusatusa i le monocrystalline SiC atoa, ae o le monocrystalline SiC active layer e faʻamautinoa ai le faʻatinoina o masini-grade, e fetaui lelei mo le faʻaogaina o tau.

2.Exceptional Eletise Meatotino: O le monocrystalline SiC layer o loʻo faʻaalia ai le maualuga o le feʻaveaʻi (> 500 cm² / V · s) ma le maualalo o le faʻaletonu, lagolagoina le faʻaogaina o masini eletise ma maualuga.

3. High-Temperature Stable: O le maualuga o le vevela o le SiC (> 600 ° C) e faʻamautinoa ai le tumau pea o le substrate tuʻufaʻatasia i lalo o tulaga ogaoga, e talafeagai ai mo taʻavale eletise ma faʻaoga afi afi.

4.6-inisi Standardized Wafer Size: Fa'atusatusa i mea masani 4-inisi SiC substrates, o le 6-inisi le fa'aputuina fa'atuputeleina tupe maua e sili atu i le 30%, fa'aitiitia tau o masini ta'itasi.

5.Conductive Design: Pre-doped N-type poʻo P-type layers e faʻaitiitia ai laasaga faʻapipiʻi ion i le gaosiga o masini, faʻaleleia le lelei o le gaosiga ma le gaosiga.

6.Superior Thermal Management: O le polycrystalline SiC base's thermal conductivity (~ 120 W / m · K) faʻalatalata atu i le monocrystalline SiC, faʻafeiloaʻi lelei luitau faʻafefe vevela i masini maualuga-mana.

O nei uiga e fa'atūina ai le 6-inisi monocrystalline SiC i luga ole polycrystalline SiC composite substrate e fai ma fofo fa'atauva mo alamanuia e pei ole malosi fa'afouina, felauaiga o nofoaafi, ma le vateatea.

Talosaga Tulaga Muamua

O le 6-inisi monocrystalline SiC i luga o le polycrystalline SiC composite substrate ua faʻapipiʻiina ma le manuia i le tele o manaʻoga maualuga:
1.Ta'avale Fa'aeletise: Fa'aaogaina i le maualuga-voltage SiC MOSFETs ma diodes e fa'aleleia ai le fa'aogaina o le inverter ma fa'alautele le tele o maa (eg, Tesla, BYD models).

2.Industrial Motor Drives: E mafai ai le maualuga o le vevela, maualuga-sui-suiga eletise eletise, faʻaitiitia le faʻaaogaina o le malosi i masini mamafa ma matagi.

3.Photovoltaic Inverters: O masini SiC e faʻaleleia ai le lelei o le liua o le la (> 99%), ae o le mea faʻapipiʻi faʻapipiʻi e faʻaitiitia ai le tau o le polokalama.

4.Rail Transportation: Faʻaaogaina i le traction converters mo nofoaafi televave ma ala i lalo o auala, ofoina atu maualuga-voltage teteʻe (> 1700V) ma mea faʻapipiʻi.

5.Aerospace: Lelei mo satelite eletise eletise ma vaʻalele afi faʻatautaia taʻavale, e mafai ona tatalia le vevela vevela ma le vevela.

I le fa'atinoga fa'atino, o le 6-inisi fa'ata'ita'i monocrystalline SiC i luga o le polycrystalline SiC fa'apipi'i substrate e matua fetaui lelei ma faiga masani SiC masini (fa'ata'ita'iga, lithography, etching), e le mana'omia se tupe fa'aopoopo fa'aopoopo.

XKH Au'aunaga

XKH saunia lagolago atoatoa mo le 6-inisi conductive monocrystalline SiC i polycrystalline SiC substrate composite, ufiufi R&D i le tele o gaosiga:

1.Customization: Fa'atonuina le mafiafia o le monocrystalline layer (5-100 μm), doping concentration (1e15-1e19 cm⁻³), ma le fa'ata'ita'iga tioata (4H/6H-SiC) e fa'amalieina ai mana'oga masini eseese.

2.Wafer Processing: Tuuina atu tele o substrates 6-inisi faatasi ma thining tua ma auaunaga metallization mo plug-ma-taʻalo tuufaatasia.

3. Fa'amaoniga Fa'atekinisi: E aofia ai su'esu'ega tioata XRD, su'esu'ega o le Hall, ma le fuaina o le vevela e fa'avave ai le agava'a o mea.

4.Rapid Prototyping: 2- i le 4-inisi faʻataʻitaʻiga (faʻasologa tutusa) mo faʻalapotopotoga suʻesuʻe e faʻavavevave ai taʻamilosaga atinaʻe.

5. Su'esu'ega Fa'aletonu & Fa'alelei: Fa'ato'a fa'ameamea mo le fa'agaioia o lu'itau (fa'ata'ita'iga, fa'aletonu o le epitaxial layer).

O la matou misiona o le faʻavaeina lea o le 6-inch conductive monocrystalline SiC i luga o le polycrystalline SiC composite substrate e avea ma fofo sili ona lelei tau-faatinoga mo le eletise eletise SiC, ofoina atu le lagolago pito i luga mai le faʻataʻitaʻiga i le gaosiga o le voluma.

Fa'ai'uga

O le 6-inisi ta'avale monocrystalline SiC i luga o le polycrystalline SiC mea fa'apipi'i e maua ai se paleni fa'aletonu i le va o le fa'atinoga ma le tau e ala i lona fausaga fou o le mono/polycrystalline hybrid. A'o fa'ateleina ta'avale eletise ma aga'i i luma le Alamanuia 4.0, o lenei mea fa'apipi'i e maua ai se fa'avae fa'atuatuaina mo mea fa'aeletonika e sosoo ai. Faʻafeiloaʻi e le XKH le galulue faʻatasi e suʻesuʻe atili le gafatia o tekinolosi SiC.