150mm 6 inisi 0.7mm 0.5mm Safaira Wafer Substrate Lavea C-vaalele SSP/DSP
Talosaga
Talosaga mo 6-inisi safaira wafers e aofia ai:
1. LED gaosiga: safaira wafer e mafai ona faʻaaogaina e fai ma sui o chips LED, ma o lona maʻaʻa ma le faʻafefe faʻafefe e mafai ona faʻaleleia ai le mautu ma le ola tautua o meataalo LED.
2. Laser gaosiga: Sapphire wafer e mafai foi ona faʻaaogaina e fai ma sui o le laser, e fesoasoani e faʻaleleia le faʻatinoga o le laser ma faʻaumiumi le ola tautua.
3. Semiconductor gaosiga: Sapphire wafers o loʻo faʻaaogaina lautele i le gaosiga o masini faʻaeletoroni ma optoelectronic, e aofia ai le faʻaogaina o mea faʻapipiʻi, solar cell, masini eletise eletise, ma isi.
4. Isi talosaga: Sapphire wafer e mafai foi ona faʻaaogaina e gaosia ai le paʻi paʻi, masini faʻapipiʻi, ata manifinifi sola sela ma isi oloa tekonolosi.
Fa'amatalaga
Meafaitino | Ole tioata tasi ole Al2O3 mama, ole safaira wafer. |
Fua | 150 mm +/- 0.05 mm, 6 inisi |
mafiafia | 1300 +/- 25 um |
Fa'atonuga | C vaalele (0001) ese M (1-100) vaalele 0.2 +/- 0.05 tikeri |
Primary flat orientation | O se vaalele +/- 1 tikeri |
Muamua mafolafola umi | 47.5 mm +/- 1 mm |
Aofa'iga Mafia Eseese (TTV) | <20 um |
punou | <25 um |
A'ai | <25 um |
Coefficient Fa'alauteleina o le vevela | 6.66 x 10-6 / °C e tutusa ma le C, 5 x 10-6 /°C e sa'o ile C axis |
Malosiaga Dielectric | 4.8 x 105 V/cm |
Dielectric tumau | 11.5 (1 MHz) i le C axis, 9.3 (1 MHz) fa'asaga i le C axis |
Dielectric Loss Tangent (fa'aigoa fa'ameamea) | itiiti ifo i le 1 x 10-4 |
Amioga vevela | 40 W/(mK) ile 20℃ |
Faila | tasi itu polesi (SSP) po lua itu polesi (DSP) Ra <0.5 nm (e AFM). O le itu i tua o le SSP wafer sa lelei le eleele i Ra = 0.8 - 1.2 um. |
Tuuina atu | 88% +/-1 % @460 nm |
Auiliili Ata

