Custom N Type SiC Seed Substrate Dia153/155mm Mo Malosiaga Fa'aeletonika

Fa'asinomaga N Type SiC Seed Substrate Dia153/155mm Mo Power Electronics Featured Image

Fa'amatalaga Puupuu:

Silicon Carbide (SiC) fatu mea'ai e fai ma mea fa'avae mo semiconductors tolu-augatupulaga, fa'ailogaina i le maualuga o le fa'aogaina o le vevela, sili atu le malepelepe malosi o le eletise, ma le maualuga o le eletise eletise. O nei meatotino e matua taua tele mo eletise eletise, masini RF, taʻavale eletise (EVs), ma faʻaaogaina malosiaga faʻafouina. XKH faʻapitoa i le R & D ma le gaosiga o fatu fatu SiC sili ona lelei, faʻaaogaina auala faʻalauteleina tioata faʻapitoa e pei o le Physical Vapor Transport (PVT) ma le High-Temperature Chemical Vapor Deposition (HTCVD) e faʻamautinoa ai le tulaga lelei o le tioata e taʻitaʻia ai pisinisi.

Auina imeli ia matou

Vaega

Faailoa atu

XKH ofo 4-inisi, 6-inisi, ma 8-inisi SiC substrates fatu ma customizable N-ituaiga / P-ituaiga doping, ausia tulaga resistivity o le 0.01-0.1 Ω·cm ma dislocation densities i lalo ifo 500 cm⁻², faia latou lelei mo le gaosiga o MOSFETs, Schottky Barriers Dio, ma Schottky Barriers. O la matou faʻagasologa tuʻufaʻatasia tuʻufaʻatasia e aofia ai le tuputupu aʻe tioata, faʻapipiʻiina, faʻamalama, ma asiasiga, faʻatasi ai ma le gaosiga o masina taʻitasi e sili atu i le 5,000 wafers e faʻafetaui ai manaʻoga eseese o faʻalapotopotoga suʻesuʻe, gaosi semiconductor, ma kamupani malosi faʻafouina.

E le gata i lea, matou te tuʻuina atu fofo masani, e aofia ai:

Fa'ata'ita'iga fa'ata'ita'iga tioata (4H-SiC, 6H-SiC)

Doping faʻapitoa (Aluminium, Nitrogen, Boron, ma isi)

Fa'aiila fa'alelei tele (Ra <0.5 nm)

XKH lagolago fa'ata'ita'iga fa'ata'ita'iga fa'ata'ita'iga fa'ata'ita'iga, fa'atalanoaga fa'apitoa, ma fa'ata'ita'iga fa'ata'ita'iga laiti e tu'uina atu ai fofo sili ona lelei SiC substrate.

Fa'agata fa'atekinisi

Silicon carbide fatu mafi
Polytype	4H
Fa'asagaga i luga ole mea sese	4° agai i<11-20>±0.5º
Tete'e	aganu'u
Diamita	205±0.5mm
mafiafia	600±50μm
Talatala	CMP,Ra≤0.2nm
Micropipe Density	≤1 ea/cm2
Masisi	≤5, Aofa'i Length≤2 * Diamita
pito meataalo/indents	Leai
Faailoga leisa pito i luma	Leai
Masisi	≤2, Aofa'i Length≤Diameter
pito meataalo/indents	Leai
Polytype vaega	Leai
Faailoga leisa tua	1mm (mai le pito i luga)
pito	Chamfer
afifiina	Kaseti tele-wafer

SiC Seed Substrates - Uiga Autu

1. Meatotino Faaletino Tulaga

· O le maualuga o le vevela (~ 490 W / m · K), e sili atu le silicon (Si) ma le gallium arsenide (GaAs), e faʻaogaina ai le faʻamafanafanaina o masini maualuga.

· Fa'aletonu le malosi o le fanua (~ 3 MV/cm), fa'amalosia le fa'agaioiga mautu i lalo o tulaga maualuga-voltage, e taua tele mo fa'aliliuina EV ma fa'aoga eletise.

· Lautele bandgap (3.2 eV), fa'aitiitia le tafega i le vevela maualuga ma fa'aleleia le fa'atuatuaina o masini.

2. Tulaga Sili Crystalline

· PVT + HTCVD fa'atekonolosi tuputupu a'e fa'aitiitiga fa'aletonu micropipe, fa'atumauina le tele o va'aiga i lalo ole 500 cm⁻².

· Wafer aufana / warp <10 μm ma luga roughness Ra <0.5 nm, fa'amautinoa le fetaui lelei ma lithography maualuga-saʻo ma faʻagasologa o le faʻapipiʻiina o ata manifinifi.

3. Filifiliga Fa'asa'oga Eseese

· N-ituaiga (Nitrogen-doped): Low resistivity (0.01-0.02 Ω·cm), optimized mo masini RF maualuga.

· P-ituaiga (Aluminum-doped): Lelei mo le malosi MOSFETs ma IGBTs, faʻaleleia atili le feʻaveaʻi.

· Semi-insulating SiC (Vanadium-doped): Resistivity> 10⁵ Ω·cm, faʻatulagaina mo 5G RF pito i luma modules.

4. Mauaina o le Siosiomaga

· Tete'e o le vevela maualuga (> 1600 ° C) ma le faʻamalosi faʻamalositino, talafeagai mo le vateatea, masini faaniukilia, ma isi siosiomaga ogaoga.

SiC Seed Substrates - Talosaga Tulaga Muamua

1. Malosiaga Fa'aeletonika

· Ta'avale Fa'aeletise (EVs): Fa'aaogaina i luga ole va'a (OBC) ma fa'aliliu'esega e fa'aleleia atili ai le lelei ma fa'aitiitia mana'oga tau pulega fa'amama.

· Alamanuia Malosiaga Faiga: Faʻaleleia le faʻaliliuina o le photovoltaic ma faʻataʻitaʻiga atamai, ausia> 99% malosiaga liua malosi.

2. RF masini

· 5G Base Stations: Semi-insulating SiC substrates mafai ai GaN-on-SiC RF power amplifiers, lagolagoina le maualuga-telefoni, maualuga-mana faʻasalalau faʻailoga.

Feso'ota'iga Satelite: O uiga maualalo e leiloa e talafeagai mo masini millimita-galu.

3. Malosiaga Fa'afouina & Malosiaga Teuina

· Malosiaga o le la: SiC MOSFET e fa'ateleina le fa'aliliuina o le DC-AC a'o fa'aitiitia le tau o faiga.

· Malosiaga Teuina Faiga (ESS): Fa'asilisiliina fa'aliliu fa'alua ma fa'alautele le ola o le ma'a.

4. Puipuiga & Aerospace

· Radar Systems: O masini SiC maualuga e faʻaaogaina i AESA (Active Electronically Scanned Array) radars.

· Va'a Va'alele Malosiaga Pulea: Fa'asa'o-tetesi SiC substrates taua mo misiona loloto-vateatea.

5. Su'esu'ega & Fa'atekonolosi Fa'afou

· Quantum Computing: SiC mama-maualuga e mafai ai ona vili su'esu'ega qubit.

· Su'esu'e maualuga-Suavai: Fa'atino i su'esu'ega suau'u ma mata'itū faaniukilia.

SiC Seed Substrates - XKH Services

1. Avanoa Fa'asologa o Sapalai

· Tu'ufa'atasiga tu'ufa'atasiga tu'ufa'atasiga: Pulea atoatoa mai le pa'u SiC maualuga mama i le fa'auma fa'ama'i, fa'amautinoa taimi ta'ita'i o le 4-6 vaiaso mo oloa masani.

· Fa'atauvaga tau: O le tamaoaiga o fua fa'atatau e mafai ai e le 15-20% le maualalo o tau nai lo tagata tauva, fa'atasi ai ma le lagolago mo Maliega Tumau (LTA).

2. Au'aunaga Fa'apitoa

· Fa'asinomaga tioata: 4H-SiC (tulaga masani) po'o le 6H-SiC (fa'aoga fa'apitoa).

· Fa'ata'ita'iina o le Doping: Fa'atonu N-ituaiga/P-ituaiga/semi-insulating meatotino.

· Faʻamaʻi faʻalelei: CMP faʻalelei ma togafitiga faʻapipiʻi epi (Ra <0.3 nm).

3. Lagolago Fa'atekinisi

· Fa'ata'ita'iga fa'ata'ita'iga fua: E aofia ai le XRD, AFM, ma le Hall lipoti fua fa'atatau.

· Fesoasoani faʻataʻitaʻiga masini: Lagolagoina le tuputupu aʻe o le epitaxial ma le faʻatulagaina o masini mamanu.

4. Tali vave

· Fa'ata'ita'iga fa'ata'ita'i: Fa'ata'ita'i la'ititi la'ititi o le 10 wafers, tu'u i totonu ole 3 vaiaso.

· Fa'alapotopotoga fa'alelalolagi: Fa'apa'aga ma le DHL ma le FedEx mo le tu'uina atu mai lea fale i lea faitoto'a.

5. Fa'amautinoaga Tulaga

· Su'esu'ega atoa: E ufiufi fa'afanua X-ray (XRT) ma su'esu'ega fa'aletonu.

· Fa'ailoga Fa'ava-o-malo: Fa'amalieina IATF 16949 (ta'avale-va'aiga) ma AEC-Q101 fa'ata'ita'iga.

Fa'ai'uga

XKH's SiC seed substrates sili i le tioata, faʻamautu filifili filifili, ma fetuunaiga faʻapitoa, tautua eletise eletise, fesoʻotaʻiga 5G, malosi faʻafouina, ma tekonolosi puipuiga. O loʻo faʻaauau pea ona matou faʻalauteleina le 8-inisi SiC masini faʻapipiʻi tele e faʻaosoina ai le faʻalapotopotoga lona tolu o le semiconductor i luma.

Muamua: SiC ipu sima/ fata mo le 4 inisi 6 inisi mea wafer u'u mo ICP

Sosoo ai: Fa'asinomaga SiC Seed Crystal Substrates Dia 205/203/208 Ituaiga 4H-N mo Feso'ota'iga Mata.