Fa'apitoa N Type SiC Seed Substrate Dia153/155mm Mo le Eletise Malosiaga

O mea e fai ai fatu o le Silicon Carbide (SiC) e avea ma mea faavae mo semiconductors o le tupulaga lona tolu, e iloga i lo latou maualuga tele o le conductivity thermal, le malosi sili atu o le breakdown electric field, ma le maualuga o le electron mobility. O nei meatotino e taua tele ai mo le power electronics, masini RF, taavale eletise (EVs), ma faʻaaogaina o le malosiaga faʻafouina. E faʻapitoa le XKH i le R&D ma le gaosiga o mea e fai ai fatu SiC maualuga le lelei, faʻaaogaina metotia faʻatuputupu tioata e pei o le Physical Vapor Transport (PVT) ma le High-Temperature Chemical Vapor Deposition (HTCVD) e faʻamautinoa ai le tulaga lelei o le crystalline i le alamanuia.

E ofoina atu e le XKH ni substrates SiC e 4-inisi, 6-inisi, ma le 8-inisi faatasi ai ma le doping N-type/P-type e mafai ona fetuutuunai, e ausia ai le maualuga o le resistivity o le 0.01-0.1 Ω·cm ma le dislocation densities i lalo ifo o le 500 cm⁻², ma avea ai ma mea lelei mo le gaosiga o MOSFET, Schottky Barrier Diodes (SBDs), ma IGBTs. O la matou faagasologa gaosiga ua tuufaatasia i luga e aofia ai le tuputupu ae o le crystal, wafer slicing, polishing, ma le siakiina, faatasi ai ma le gafatia gaosiga faalemasina e sili atu i le 5,000 wafers e faafetaiaia ai manaoga eseese o faalapotopotoga suesue, kamupani gaosi semiconductor, ma kamupani malosiaga faafouina.

E le gata i lea, matou te tuʻuina atu fofo faʻapitoa, e aofia ai:

Fa'atulagaina o le fa'atulagaga o le tioata (4H-SiC, 6H-SiC)

Fa'aaogāina fa'apitoa o vaila'au fa'asusu (Alumini, Nitrogen, Boron, ma isi)

Fa'apala'au lamolemole tele (Ra < 0.5 nm)

E lagolagoina e le XKH le fa'agasologa fa'avae i fa'ata'ita'iga, feutagaiga fa'apitoa, ma fa'ata'ita'iga laiti e tu'uina atu ai fofo fa'alelei SiC substrate.