Fa'apitoa GaN-on-SiC Epitaxial Wafers (100mm, 150mm) – Filifiliga SiC Substrate Options (4H-N, HPSI, 4H/6H-P)

Fa'apena GaN-on-SiC Epitaxial Wafers (100mm, 150mm) – Filifiliga Fa'asa'o SiC Tele (4H-N, HPSI, 4H/6H-P) Ata Fa'aalia

Fa'amatalaga Puupuu:

O a matou GaN-on-SiC Epitaxial Wafers e ofoina atu le faʻatinoga sili atu mo le maualuga-mamana, maualuga-vave faʻaoga e ala i le tuʻufaʻatasia o meatotino faʻapitoa o Gallium Nitride (GaN) faʻatasi ai ma le malosi o le vevela ma le malosi faʻainisinia oSilicon Carbide (SiC). E maua i le 100mm ma le 150mm wafer sizes, o nei wafers e fausia i luga o le tele o filifiliga SiC substrate, e aofia ai ituaiga 4H-N, HPSI, ma 4H / 6H-P, faʻatulagaina e faʻafetaui ai manaʻoga faʻapitoa mo eletise eletise, RF amplifiers, ma isi masini semiconductor. Faʻatasi ai ma faʻapipiʻi faʻapipiʻi epitaxial ma mea faʻapitoa SiC substrates, o matou wafers ua mamanuina e faʻamautinoa ai le maualuga o le lelei, faʻaogaina o le vevela, ma le faʻamaoni mo le manaʻomia o mea tau pisinisi.

Auina imeli ia matou

Fa'amatalaga Oloa

Faailoga o oloa

Vaega

●Epitaxial Layer Mafiafia: Fa'apitoa mai1.0 µmia3.5 µm, sili ona lelei mo le maualuga o le malosi ma le faʻatinoina o taimi.

●SiC Substrate Filifiliga: Avanoa i mea eseese SiC, e aofia ai:

4H-N: Tulaga maualuga Nitrogen-doped 4H-SiC mo faʻaoga maualuga, maualuga le malosi.
HPSI: High-Purity Semi-Insulating SiC mo talosaga e manaʻomia ai le faʻaesea eletise.
4H/6H-P: Faʻafefiloi 4H ma 6H-SiC mo le paleni o le maualuga maualuga ma le faʻamaoni.

● Laisene Wafer: Avanoa i totonu100mmma150mmdiameters mo versatility i masini fua ma tuufaatasia.

● Maualuluga Malolo malepe: GaN i luga ole SiC tekonolosi e maua ai le eletise gau maualuga, e mafai ai ona malosi le faʻatinoga i talosaga maualuga-malosi.

●Fa'aoso maualuga maualuga: O le fa'aosoina o le vevela o le SiC (tusa 490 W/m·K) faʻamautinoaina le faʻamalo lelei o le vevela mo le faʻaogaina o le malosi.

Fa'amatalaga Fa'apitoa

Parameter	Taua
Fuafu lapoa	100mm, 150mm
Epitaxial Layer Mafiafia	1.0 µm – 3.5 µm (fa'atonu)
SiC Substrate Ituaiga	4H-N, HPSI, 4H/6H-P
SiC Thermal Conductivity	490 W/m·K
SiC Resistivity	4H-N: 10^6 Ω·cm,HPSI: Semi-Insulating,4H/6H-P: Fa'afefiloi 4H/6H
GaN Layer Mafiafia	1.0 µm – 2.0 µm
GaN Carrier Concentration	10^18 cm^-3 i le 10^19 cm^-3 (fa'atonu)
Tulaga lelei ole Laupapa	RMS Malosi: < 1 nm
Dislocation Density	<1 x 10^6 cm^-2
Aufana apa	<50 µm
Wafer mafolafola	<5 µm
Mata'utia Fa'agaioiga Vevela	400°C (masani mo masini GaN-on-SiC)

Talosaga

●Power Electronics:GaN-on-SiC wafers e maua ai le maualuga maualuga ma le faʻafefe o le vevela, faʻapena lelei mo faʻamalosi eletise, masini faʻaliliuina eletise, ma faʻaogaina eletise eletise faʻaaogaina i taʻavale eletise, faiga faʻafouina malosi, ma masini fale gaosi oloa.
●RF Power Amplifiers:O le tu'ufa'atasiga o le GaN ma le SiC e lelei atoatoa mo fa'aoga RF maualuga-maualuga, maualuga-mana e pei o feso'ota'iga, feso'ota'iga satelite, ma fa'aoga radar.
●Aerospace ma le Puipuiga:O nei wafers e talafeagai mo aerospace ma tekinolosi puipuiga e manaʻomia ai le maualuga o le eletise eletise ma faiga fesoʻotaʻiga e mafai ona faʻaogaina i lalo o tulaga faigata.
●Tausaga Taavale:Lelei mo faiga eletise maualuga i taʻavale eletise (EVs), taʻavale faʻapipiʻi (HEVs), ma nofoaga faʻapipiʻi, faʻamalosia lelei le liua ma le pulea lelei.
●Military and Radar Systems:GaN-on-SiC wafers o loʻo faʻaaogaina i le radar system mo lo latou maualuga maualuga, mana faʻaogaina gafatia, ma le faʻaogaina o le vevela i siosiomaga faigata.
●Fa'aogaina ole Galulue Malili ma Milimita-Galu:Mo feso'ota'iga feso'ota'iga o lo'o soso'o mai, e aofia ai le 5G, GaN-on-SiC e maua ai le fa'atinoga sili ona lelei i le microwave ma le millimita-galu laina maualuga.

Q&A

Q1: O a faʻamanuiaga o le faʻaaogaina o le SiC e fai ma sui mo GaN?

A1:Silicon Carbide (SiC) e ofoina atu le maualuga o le vevela, voltage malepelepe maualuga, ma le malosi faʻainisinia pe a faʻatusatusa i mea masani e pei o le silicon. O le mea lea e lelei ai le gaN-on-SiC wafers mo le maualuga o le malosi, maualuga-televave, ma le maualuga o le vevela. O le SiC substrate e fesoasoani e faʻaumatia le vevela e gaosia e masini GaN, faʻaleleia le faʻamaoni ma le faʻatinoga.

Q2: E mafai ona faʻapipiʻiina le mafiafia o le epitaxial layer mo faʻaoga faʻapitoa?

A2:Ioe, o le mafiafia o le epitaxial layer e mafai ona faʻapipiʻiina i totonu o le tele o1.0 µm i le 3.5 µm, fa'alagolago ile mana ma taimi ole mana'omia ole talosaga. E mafai ona matou fa'avasegaina le mafiafia o le GaN e fa'amalieina ai le fa'atinoga mo masini fa'apitoa e pei o fa'amalo eletise, faiga RF, po'o ta'amilosaga maualuga.

Q3: O le a le eseesega i le va o 4H-N, HPSI, ma 4H/6H-P SiC substrates?

A3:

4H-N: Nitrogen-doped 4H-SiC e masani ona faʻaaogaina mo faʻaoga maualuga-telefoni e manaʻomia ai le maualuga o le eletise.
HPSI: High-Purity Semi-Insulating SiC e tuʻuina atu le faʻaesea eletise, lelei mo talosaga e manaʻomia ai le faʻaogaina o le eletise.
4H/6H-P: O se faʻafefiloi o le 4H ma le 6H-SiC e paleni faʻatinoga, e ofoina atu se tuʻufaʻatasiga o le maualuga maualuga ma le malosi, talafeagai mo faʻaoga eletise eletise eseese.

Q4: O nei GaN-on-SiC wafers talafeagai mo talosaga maualuga-malosi pei o taavale eletise ma malosiaga faʻafouina?

A4:Ioe, GaN-on-SiC wafers e fetaui lelei mo faʻaoga maualuga e pei o taʻavale eletise, malosi faʻafouina, ma faiga faʻapisinisi. O le maualuga o le gau, le maualuga o le vevela, ma le faʻaogaina o le malosi o le GaN-on-SiC masini e mafai ai ona latou faʻatinoina lelei i le manaʻomia o le liua o le mana ma le pulea o taʻaloga.

Q5: O le a le tele o le fa'a'ese'ese masani mo nei ufi?

A5:Ole tele ole va'aiga ole gaN-on-SiC wafers e masani lava<1 x 10^6 cm^-2, lea e faʻamautinoa ai le maualuga o le epitaxial tuputupu aʻe, faʻaitiitia faʻaletonu ma faʻaleleia le faʻaogaina o masini ma le faʻamaoni.

Q6: E mafai ona ou talosagaina se lapoʻa faʻapitoa poʻo se ituaiga substrate SiC?

A6:Ioe, matou te ofoina atu lapopo'a fa'apitoa (100mm ma 150mm) ma ituaiga substrate SiC (4H-N, HPSI, 4H/6H-P) e fa'afetaui ai mana'oga patino o lau talosaga. Fa'amolemole fa'afeso'ota'i mai matou mo nisi fa'avasegaga ma fa'atalanoa ou mana'oga.

Q7: E fa'afefea ona fa'atino gaN-on-SiC wafers i si'osi'omaga ogaoga?

A7:GaN-on-SiC wafers e lelei mo si'osi'omaga ogaoga ona o lo latou mautu maualuga vevela, fa'afoega maualuga le mana, ma sili atu le malosi o le fa'amama. O nei wafers e faʻatinoina lelei i tulaga maualuga-vevela, maualuga-malosi, ma tulaga maualuga e masani ona faʻafeiloaʻi i le aerospace, puipuiga, ma faʻaoga pisinisi.

Fa'ai'uga

O a matou GaN-on-SiC Epitaxial Wafers faʻapitoa e tuʻufaʻatasia meatotino maualuluga o le GaN ma le SiC e tuʻuina atu ai le faʻatinoga sili atu i faʻaoga maualuga ma maualuga. Faatasi ai ma le tele o SiC substrate filifiliga ma customizable epitaxial layers, o nei wafers e lelei mo alamanuia e manaʻomia ai le maualuga maualuga, pulega vevela, ma le faʻamaoni. Pe mo le eletise eletise, faiga RF, poʻo le puipuiga, o matou GaN-on-SiC wafers e ofoina atu le faʻatinoga ma le fetuutuunai e te manaʻomia.