Fa'asinomaga SiC Seed Crystal Substrates Dia 205/203/208 Ituaiga 4H-N mo Feso'ota'iga Mata.

Fa'amatalaga Puupuu:

SiC (silicon carbide) fatu tioata substrates, e avea ma ave autu o lona tolu-augatupulaga semiconductor meafaitino, faʻaaogaina lo latou maualuga vevela conductivity (4.9 W/cm·K), ultra-maualuga malepelepe malosi fanua (2-4 MV/cm), ma le lautele gap (3.2 eV) e avea o ni mea faavae mo optoelectronics, feʻaveaʻi malosiaga fou, 5. E ala mai i tekonolosi faufale e pei o felauaiga ausa faaletino (PVT) ma epitaxy vaega vai (LPE), XKH e maua ai le 4H/6H-N-ituaiga, semi-insulating, ma le 3C-SiC polytype seed substrates i 2-12-inisi wafer formats, ma micropipe densities i lalo ole 0.3 cm⁻2 m², Ω. talatala (Ra) <0.2 nm. O a matou auaunaga e aofia ai le tuputupu aʻe o le heteroepitaxial (faʻataʻitaʻiga, SiC-on-Si), nanoscale precision machining (± 0.1 μm tolerance), ma le tuʻuina atu vave o le lalolagi, faʻamalosia tagata faʻatau e faʻatoʻilaloina pa puipui faʻapitoa ma faʻavavevave le neutrality carbon ma suiga atamai.

Auina imeli ia matou

Vaega

Fa'agata fa'atekinisi

Silicon carbide fatu mafi
Polytype	4H
Fa'asagaga i luga ole mea sese	4° agai i<11-20>±0.5º
Tete'e	aganu'u
Diamita	205±0.5mm
mafiafia	600±50μm
Talatala	CMP,Ra≤0.2nm
Micropipe Density	≤1 ea/cm2
Masisi	≤5, Aofa'i Length≤2 * Diamita
pito meataalo/indents	Leai
Faailoga leisa pito i luma	Leai
Masisi	≤2, Aofa'i Length≤Diameter
pito meataalo/indents	Leai
Polytype vaega	Leai
Faailoga leisa tua	1mm (mai le pito i luga)
pito	Chamfer
afifiina	Kaseti tele-wafer

Uiga Autu

1. Fa'atonuga tioata ma Fa'atinoga Fa'aeletise

· Fa'amautu Crystallographic: 100% 4H-SiC polytype pule'aga, zero multicrystalline inclusions (fa'ata'ita'iga, 6H/15R), fa'atasi ai ma le XRD lulu pupuni atoa-lautele i le afa-maualuga (FWHM) ≤32.7 arcsec.

· Maualuluga Avea ma Avega: Eletonika fe'avea'i o le 5,400 cm²/V·s (4H-SiC) ma le pu e 380 cm²/V·s, e mafai ai ona fa'atulagaina masini fa'akomepiuta.

· Malosi o le Radiation: Tatalia le 1 MeV neutron irradiation faʻatasi ai ma le faʻaleagaina o le faʻaleagaina o le 1 × 10¹⁵ n / cm², lelei mo le vaalele ma le faʻaogaina o mea faaniukilia.

2. Meatotino vevela ma masini

· Tulaga Fa'avevela Fa'avevela: 4.9 W/cm·K (4H-SiC), fa'atoluina le silikoni, lagolago le fa'agaioiga i luga ole 200°C.

· Fa'asao Fa'alautele Fa'amama maualalo: CTE o le 4.0 × 10⁻⁶ / K (25-1000 ° C), fa'amautinoa le fetaui lelei ma le fa'apipi'iina o le silicon ma fa'aitiitia ai le mamafa o le vevela.

3. Puleaina o Fa'aletonu ma Fa'agaoioiga Sa'o

· O'o'o ole paipa: <0.3 cm⁻² (8-inisi sifi), ma'ema'e ma'ema'e <1,000 cm⁻² (fa'amaonia e ala i le togitogiina o le KOH).

· Tulaga Lelei: CMP-polesi i le Ra <0.2 nm, fa'afeiloa'i EUV lithography-grade mafolafola mana'oga.

Talosaga Autu

Malo	Fa'atinoga Fa'atusa	Tulaga Fa'ainisinia
Feso'ota'iga Optical	100G/400G lasers, fa'akomepi photonics hybrid modules	InP fatu substrates e mafai ai le bandgap tuusaʻo (1.34 eV) ma le heteroepitaxy faʻavae Si, faʻaitiitia le gau o fesoʻotaʻiga mata.
Ta'avale Malosi Fou	800V feliuliua'i maualuga-volt, luga o uta (OBC)	4H-SiC substrates e fa'asagatau> 1,200 V, fa'aitiitia le gau o le fa'aosoina i le 50% ma le voluma o le polokalama e 40%.
5G Feso'ota'iga	Melimita-galu RF masini (PA/LNA), fa'atūlaga fa'aola eletise	Semi-insulating SiC substrates (resistivity> 10⁵ Ω·cm) mafai ai le maualuga-alave (60 GHz +) faʻapipiʻi passive.
Meafaigaluega Fa'apisinisi	Su'e vevela maualuga, transformers o lo'o i ai nei, mata'itū fa'aaniukilia reactor	InSb fatu fatu (0.17 eV bandgap) e maua ai le maaleale maaleale e oo atu i le 300%@10 T.

Tulaga Autu

SiC (silicon carbide) substrates tioata fatu e tuʻuina atu faʻatinoga e le mafaatusalia ma le 4.9 W / cm · K faʻavevela vevela, 2-4 MV / cm faʻaleagaina le malosi o le fanua, ma le 3.2 eV lautele bandgap, e mafai ai ona faʻaogaina le malosi maualuga, maualuga, ma le maualuga o le vevela. O lo'o fa'aalia ai le maualuga ole micropipe ma le <1,000 cm⁻² le tele o le fa'a'ese'ese, o nei mea e fa'amautinoa ai le fa'atuatuaina i tulaga ogaoga. O latou vaila'au inertness ma CVD-compatible surfaces (Ra <0.2 nm) lagolagoina le alualu i luma heteroepitaxial tuputupu ae (eg, SiC-on-Si) mo optoelectronics ma EV malosiaga faiga.

Au'aunaga XKH:

1. Oloa Fa'apitoa

· Fa'apena Fa'alelei Fa'alelei: 2–12-inisi sifi ma li'o, fa'afa'afa'afa, po'o fa'ailoga fa'apitoa (±0.01 mm fa'apalepale).

· Puleaina o le Doping: Sa'o le nitrogen (N) ma le alumini (Al) doping e ala i le CVD, ausia le resistivity e amata mai le 10⁻³ i le 10⁶ Ω·cm.

2. Fa'atekonolosi Fa'agasologa Maua'i'

· Heteroepitaxy: SiC-on-Si (fesoʻotaʻi ma laina silicon 8-inisi) ma SiC-on-Diamond (conductivity vevela> 2,000 W / m · K).

· Fa'aitiitia le fa'aletonu: fa'agata vaita'i ma fa'amalo e fa'aitiitia ai le fa'aletonu o le micropipe/density, fa'aleleia atili le fua o le wafer i> 95%.

3. Faiga Fa'atonuga Lelei'

· Su'ega Fa'ai'u i le Fa'ai'uga: Raman spectroscopy (polytype verification), XRD (crystallinity), ma le SEM (su'esu'ega fa'aletonu).

· Faʻamaonia: Faʻamaonia ma le AEC-Q101 (taavale), JEDEC (JEDEC-033), ma le MIL-PRF-38534 (vaega-militeri).

4. Lagolago i le Global Supply Chain'

· Gaosia Gaosi: Fa'alemasina fa'ameamea>10,000 wafers (60% 8-inisi), fa'atasi ai ma le 48-itula fa'alavelave fa'afuase'i.

· Logistics Network: Kava i Europa, Amerika i Matu, ma Asia-Pasefika e ala i uta ea / sami ma afifi e pulea le vevela.

5. Atina'e Fa'ainisinia'

· Tu'ufa'atasiga R&D Labs: Galulue fa'atasi ile SiC power module fa'apipi'iina lelei (fa'ata'ita'iga, DBC substrate integration).

· Laisene IP: Tuuina atu le GaN-on-SiC RF epitaxial growth technology laisene e faʻaitiitia ai tau o le R&D.

Aotelega

SiC (silicon carbide) substrates tioata fatu, e avea o se mea faʻapitoa, o loʻo toe faʻafouina filifili pisinisi a le lalolagi e ala i faʻalavelave i le tuputupu aʻe tioata, puleaina o faaletonu, ma le tuʻufaʻatasia eseese. E ala i le faʻaauauina pea o le faʻaitiitia o le faʻaleagaina o le wafer, faʻateleina le 8-inisi le gaosiga, ma le faʻalauteleina o faʻasalalauga heteroepitaxial (faʻataʻitaʻiga, SiC-on-Diamond), XKH e tuʻuina atu ai le maualuga-faʻatuatuaina, tau-lelei fofo mo optoelectronics, malosi fou, ma gaosiga alualu i luma. O la matou tautinoga i mea fou e faʻamautinoa ai le taʻitaʻia e tagata faʻatau i le carbon neutrality ma faiga faʻapitoa, faʻatautaia le isi vaitau o faʻalapotopotoga faʻanatura semiconductor lautele-bandgap.