GaAs laser epitaxial wafer 4 inisi 6 inisi VCSEL fa'atulagaina o le lua luga laser wavelength 940nm single junction

O le GaAs laser epitaxial wafer 4 inisi 6 inisi VCSEL vertical cavity surface emission laser wavelength 940nm single junction Ata Fa'aalia

Fa'amatalaga Pupuu:

O le mamanu ua fa'atulagaina e le tagata fa'atau o le Gigabit Ethernet laser arrays mo le tutusa maualuga o le 6-inisi wafers 850/940nm ogatotonu optical wavelength oxide limited po'o le proton-implanted VCSEL digital data link communication, laser mouse electrical ma optical characteristics low sensitivity to temperature. O le VCSEL-940 Single Junction o se vertical cavity surface emitting laser (VCSEL) ma se emission wavelength e masani lava e tusa ma le 940 nanometers. O ia lasers e masani ona aofia ai se tasi quantum well ma e mafai ona tu'uina atu le fa'asalalauga malamalama lelei. O le wavelength o le 940 nanometers e fai ai i totonu o le infrared spectrum, e talafeagai mo le tele o fa'aoga. Pe a fa'atusatusa i isi ituaiga o lasers, o VCsels e sili atu le lelei o le electro-optical conversion efficiency. O le afifi VCSEL e la'ititi ma faigofie ona fa'apipi'i. O le lautele o le fa'aoga o le VCSEL-940 ua avea ai ma se vaega taua i tekinolosi fa'aonaponei.

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Fa'aaliga

O uiga autū o le pepa epitaxial laser GaAs e aofia ai

1. Fausaga e tasi le feso'ota'iga: O lenei laser e masani ona faia i se tasi le vaieli quantum, lea e mafai ona tu'uina atu ai le fa'asalalauina lelei o le malamalama.
2. Umi o le galu: O le umi o le galu e 940 nm e avea ai ma vaega o le infrared spectrum, e talafeagai mo le tele o faʻaoga.
3. Lelei maualuga: Pe a fa'atusatusa i isi ituaiga o lasers, o le VCSEL e maualuga lona lelei o le liua eletise-optical.
4. Laʻititi: E fai si laʻititi o le afifi VCSEL ma faigofie ona faʻapipiʻi.

5. Maualalo le tulaga o le tafe eletise ma le maualuga o le lelei: O laser heterostructure tanumia e faaalia ai le maualalo tele o le lasing threshold current density (e pei o le 4mA/cm²) ma le maualuga o le external differential quantum efficiency (e pei o le 36%), faatasi ai ma le linear output power e sili atu i le 15mW.
6. Mausali o le faiga o le waveguide: O le laser heterostructure tanumia e iai le lelei o le mausali o le faiga o le waveguide ona o lona faiga o le refractive index guided waveguide ma le lautele o le active strip (pe tusa ma le 2μm).
7. Lelei tele le lelei o le liua o le photoelectric: I le faʻaleleia atili o le faagasologa o le tuputupu aʻe o le epitaxial, e mafai ona maua ai le maualuga o le lelei o le quantum i totonu ma le lelei o le liua o le photoelectric e faʻaitiitia ai le gau i totonu.
8. Fa'atuatuaina maualuga ma le ola: e mafai e le tekonolosi tuputupu a'e epitaxial maualuga ona saunia ni pepa epitaxial ma foliga lelei ma le maualalo o le fa'aletonu, fa'aleleia atili le fa'atuatuaina o oloa ma le ola.
9. Talafeagai mo le tele o faʻaoga: O le pepa epitaxial diode laser faʻavae GAAS e faʻaaogaina lautele i fesoʻotaʻiga alava opitika, faʻaoga tau alamanuia, infrared ma photodetectors ma isi matāʻupu.

O auala autu e faʻaaogaina ai le pepa epitaxial laser GaAs e aofia ai

1. Fesootaiga opitika ma fesootaiga faʻamatalaga: O wafer epitaxial GaAs e faʻaaogaina lautele i le matata o fesootaiga opitika, aemaise lava i faiga fesoʻotaʻiga opitika saoasaoa maualuga, mo le gaosia o masini optoelectronic e pei o lasers ma detectors.

2. Fa'aoga fa'apisinisi: O laupepa epitaxial laser GaAs e iai fo'i fa'aoga taua i fa'aoga fa'apisinisi, e pei o le fa'agasologaina o le laser, fuaina ma le lagonaina.

3. Mea fa'aeletoronika a tagata fa'atau: I mea fa'aeletoronika a tagata fa'atau, e fa'aaogaina ai wafers epitaxial GaAs e gaosia ai VCsels (vertical cavity surface-emitting lasers), lea e fa'aaogaina lautele i telefonipoto ma isi mea fa'aeletoronika a tagata fa'atau.

4. Fa'aoga Rf: O meafaitino GaAs e iai ni fa'amanuiaga taua i le matata RF ma e fa'aaogaina e gaosia ai masini RF maualuga le fa'atinoga.

5. Leisa Quantum dot: O leisa quantum dot e faʻavae i le GAAS e faʻaaogaina lautele i fesoʻotaʻiga, fomaʻi ma vaega faamiliteli, aemaise lava i le fusi fesoʻotaʻiga opitika 1.31µm.

6. Passive Q switch: O le GaAs absorber e faʻaaogaina mo diode-pumped solid state lasers ma le passive Q switch, lea e talafeagai mo micro-machining, ranging ma micro-surgery.

O nei faʻaoga e faʻaalia ai le gafatia o wafers epitaxial laser GaAs i le tele o faʻaoga faʻatekonolosi maualuga.

E ofoina atu e le XKH ni wafer epitaxial GaAs ma ni fausaga eseese ma ni mafiafia e fetaui ma manaʻoga o tagata faʻatau, e aofia ai le tele o faʻaoga e pei o le VCSEL/HCSEL, WLAN, nofoaga autu 4G/5G, ma isi. O oloa a le XKH e gaosia e faʻaaoga ai masini faʻaonaponei a le MOCVD e faʻamautinoa ai le maualuga o le faʻatinoga ma le faʻatuatuaina. I tulaga o loʻo faʻaaogaina ai mea tau lokisitika, e tele a matou auala faʻavaomalo e maua mai ai, e mafai ona matou taulimaina ma le fetuutuunaʻi le tele o oka, ma tuʻuina atu auaunaga faʻaopoopo taua e pei o le faʻaitiitia o le mamafa, vaevaega, ma isi. O faiga faʻatino lelei e faʻamautinoa ai le tuʻuina atu i le taimi atofaina ma faʻamalieina manaʻoga o tagata faʻatau mo le lelei ma taimi e tuʻuina atu ai. A maeʻa ona taunuʻu mai, e mafai e tagata faʻatau ona maua le lagolago faʻapitoa atoatoa ma le auaunaga pe a uma le faʻatau atu e faʻamautinoa ai o loʻo faʻaaogaina lelei le oloa.