Gallium Nitride (GaN) Epitaxial Tuputupu i luga ole Safaira Wafers 4inch 6inch mo MEMS
Meatotino a GaN i luga ole Safaira Wafers
● Maualuluga Lelei:GaN-faʻavae masini e maua ai le lima taimi sili atu le malosi nai lo masini faʻavae silicon, faʻaleleia le faʻatinoga i faʻaoga faʻaeletoroni eseese, e aofia ai le RF amplification ma optoelectronics.
●Apo'a Lautele:Ole gap lautele ole GaN e mafai ai ona maualuga le lelei ile vevela maualuga, ma fa'alelei mo fa'aoga maualuga ma maualuga.
●Tumau:GaN's gafatia e taulimaina tulaga ogaoga (maualuga vevela ma radiation) faʻamautinoa le faʻatinoga umi i totonu o siosiomaga faigata.
●Laiti Laiti:GaN faʻatagaina le gaosiga o masini faʻapipiʻi ma mama faʻatusatusa i mea masani semiconductor, faʻafaigofie mea laiti ma sili atu le malosi eletise.
Avanoa
Gallium Nitride (GaN) o loʻo faʻaalia e avea ma semiconductor o filifiliga mo talosaga faʻapitoa e manaʻomia ai le malosi maualuga ma le lelei, e pei o RF pito i luma modules, fesoʻotaʻiga televave fesoʻotaʻiga, ma moli moli. GaN epitaxial wafers, pe a tupu i luga o le safaira substrates, ofoina atu se tuufaatasiga o le conductivity vevela maualuga, maualuga malepelepe voltage, ma le tele o tali masani, o le ki mo le faatinoga lelei i masini fesootaiga uaea, radar, ma jammers. O lo'o maua nei u'amea i le 4-inisi ma le 6-inisi le lautele, fa'atasi ai ma le mafiafia o le GaN e fetaui ma mana'oga fa'apitoa eseese. O meatotino tulaga ese a GaN ua avea ai ma sui autu mo le lumanaʻi o eletise eletise.
Fua Fa'atatau
| Oloa Fa'ailoga | Fa'amatalaga |
| Fuafu lapoa | 50mm, 100mm, 50.8mm |
| Alafua | Safaira |
| GaN Layer Mafiafia | 0.5 μm - 10 μm |
| GaN Ituaiga/Doping | N-ituaiga (P-ituaiga avanoa pe a talosagaina) |
| GaN Crystal Orientation | <0001> |
| Ituaiga Faila | Polesi Itu Tasi (SSP), Failaila Itu Lua (DSP) |
| Al2O3 Mafiafia | 430 μm - 650 μm |
| TTV (Vaega Mafiafia Aofa'i) | ≤ 10 μm |
| punou | ≤ 10 μm |
| A'ai | ≤ 10 μm |
| Lau'ele'ele | Nofoaga Fa'aoga Fa'aoga > 90% |
Q&A
Q1: O a mea taua o le faʻaaogaina o le GaN nai lo semiconductors faʻavae faʻavae masani?
A1: Ua ofoina atu e le GaN le tele o mea taua i luga o le silikoni, e aofia ai se vaeluaga lautele, lea e mafai ai ona taulimaina voltage malepelepe maualuga ma galue lelei i le maualuga o le vevela. O le mea lea e lelei ai le GaN mo fa'aoga maualuga-maualuga, fa'atelevave pei o RF modules, power amplifiers, ma LEDs. Ole malosi ole GaN ile fa'aogaina o le malosi maualuga e mafai ai fo'i ona la'ititi ma sili atu le lelei o masini fa'atusatusa i isi mea e fa'atatau ile silicon.
Q2: E mafai ona faʻaogaina le GaN i luga o Sapphire wafers i talosaga MEMS (Micro-Electro-Mechanical Systems)?
A2: Ioe, GaN on Sapphire wafers e fetaui lelei mo talosaga MEMS, aemaise lava pe a manaʻomia le maualuga o le mana, faʻamautu o le vevela, ma le pisapisao maualalo. O le umi o le meafaitino ma le lelei i siosiomaga maualuga-telefoni e faʻaogaina lelei mo masini MEMS o loʻo faʻaogaina i fesoʻotaʻiga uaea, lagona, ma faʻaogaina o le radar.
Q3: O a ni faʻaoga talafeagai a GaN i fesoʻotaʻiga uaea?
A3: GaN o loʻo faʻaaogaina lautele i RF pito i luma modules mo fesoʻotaʻiga uaealesi, e aofia ai le 5G infrastructure, radar system, ma jammers. O lona malosi maualuga ma le vevela e faʻamalieina mo le maualuga-mamana, maualuga-vave masini, mafai ai ona sili atu le faʻatinoga ma mea laiti foliga faʻatusatusa i fofo faʻavae.
Q4: O a taimi taʻimua ma aofaʻi laʻititi o faʻatonuga mo GaN i luga o sapphire wafers?
A4: Taimi ta'ita'i ma le aofa'i la'ititi o le fa'atonuga e fesuisuia'i e fa'atatau i le tele o le wafer, le mafiafia o le GaN, ma mana'oga fa'apitoa a tagata fa'atau. Fa'amolemole fa'afeso'ota'i sa'o mai mo tau fa'amatalaga ma avanoa e fa'atatau i au fa'amatalaga.
Q5: E mafai ona ou maua le mafiafia o le gaN layer poʻo le doping level?
A5: Ioe, matou te ofoina atu aganuʻu o GaN mafiafia ma doping tulaga e fetaui ma manaoga faapitoa talosaga. Fa'amolemole ta'u mai ia i matou au fa'amatalaga mana'omia, ma o le a matou tu'uina atu se fofo fa'apitoa.
Auiliili Ata
