Gallium Nitride i luga ole Silicon wafer 4inch 6inch Fa'atonu Si Substrate Fa'atonuga, Resistivity, ma N-ituaiga/P-ituaiga Filifiliga
Vaega
●Apo'a Lautele:GaN (3.4 eV) e maua ai se faʻaleleia atili i le maualuga-televave, maualuga-malosi, ma le maualuga o le vevela faʻatusatusa i le silikoni masani, faʻapitoa mo masini eletise ma RF amplifiers.
● Fa'asinomaga Si Substrate:Filifili mai tulaga eseese Si substrate e pei o <111>, <100>, ma isi e fetaui ma manaoga faapitoa o masini.
●Customized Resistivity:Filifili i le va o filifiliga tetee eseese mo Si, mai le semi-insulating i le maualuga-resistivity ma le maualalo-resistivity e sili ona lelei le faatinoga o masini.
● Ituaiga Doping:E maua ile N-type po'o le P-type doping e fetaui ma mana'oga o masini eletise, RF transistors, po'o LED.
●Mata'amiloga Malosi maualuga:GaN-on-Si wafers e maualuga le malepelepe voltage (e oʻo atu i le 1200V), faʻatagaina i latou e faʻatautaia talosaga maualuga-voltage.
●Saosaoa Suiga vave:O le GaN e maualuga atu le eletise eletise ma maualalo le gau o suiga nai lo le silikoni, ma avea ai GaN-on-Si wafers lelei mo taʻavale televave.
●Fa'aleleia le fa'atinoga o le vevela:E ui lava i le maualalo o le vevela o le silikoni, o le GaN-on-Si o loʻo ofoina atu pea le faʻamautuina o le vevela, faʻatasi ai ma le faʻafefeina o le vevela sili atu nai lo masini kasa masani.
Fa'amatalaga Fa'apitoa
| Parameter | Taua |
| Tele ole Wafer | 4-inisi, 6-inisi |
| Si Fa'asinomaga Fa'avae | <111>, <100>, aga masani |
| Si Resistivity | Faʻasaʻo maualuga, Semi-insulating, Low-resistivity |
| Ituaiga Doping | N-ituaiga, P-ituaiga |
| GaN Layer Mafiafia | 100 nm – 5000 nm (fa'atonu) |
| AlGaN Pa puipui | 24% – 28% Al (e masani 10-20 nm) |
| Malolo malepe | 600V – 1200V |
| Feavea'i Electron | 2000 cm²/V·s |
| Suiga Auala | E oʻo i le 18 GHz |
| Fa'asaa ole Laupapa | RMS ~0.25 nm (AFM) |
| GaN Pepa Tetee | 437.9 Ω·cm² |
| Aofa'i Wafer Warp | <25 µm (maualuga) |
| Amioga vevela | 1.3 – 2.1 W/cm·K |
Talosaga
Malosiaga Faaeletonika: GaN-on-Si e lelei mo le eletise eletise e pei o le eletise eletise, faʻaliliuga, ma faʻaliliuga faʻaaogaina i faiga faʻafouina faʻafouina, taʻavale eletise (EVs), ma meafaigaluega faʻapisinisi. O lona maualuga gau gau ma maualalo i luga-tetee mautinoa lelei le liua malosiaga, e oo lava i talosaga maualuga-mana.
Feso'ota'iga RF ma Microwave: GaN-on-Si wafers e ofoina atu le maualuga-telefoni gafatia, faʻapena lelei mo RF power amplifiers, satelite fesoʻotaʻiga, radar system, ma 5G tekinolosi. Faʻatasi ai ma le maualuga o le suiga o le saoasaoa ma le mafai ona faʻagaioi i laina maualuga (e oʻo atu i18 GHz), GaN masini e ofoina atu le faatinoga sili atu i nei talosaga.
Taavale eletise: GaN-on-Si o loʻo faʻaaogaina i masini eletise, e aofia aiuta i luga ole laupapa (OBCs)maDC-DC liliu. O lona gafatia e galue i le maualuga o le vevela ma tetee atu i le maualuga o le maualuga o le voltage e mafai ai ona fetaui lelei mo taʻavale eletise e manaʻomia ai le suiga malosi.
LED ma Optoelectronics: GaN o mea e filifilia mo lanu moana ma paʻepaʻe LED. GaN-on-Si wafers o loʻo faʻaaogaina e gaosia ai le maualuga o le faʻaogaina o moli moli, e maua ai le faʻatinoga sili ona lelei i moli, faʻaaliga tekinolosi, ma fesoʻotaʻiga mata.
Q&A
Q1: O le a le aoga o le GaN i luga o le silikoni i masini eletise?
A1:GaN e iai sevaeluaga lautele (3.4 eV)nai lo le silikoni (1.1 eV), lea e mafai ai ona tatalia voltage maualuga ma le vevela. O lenei meatotino e mafai ai e GaN ona faʻatautaia faʻaoga maualuga-malosi sili atu ona lelei, faʻaitiitia le paʻu o le eletise ma faʻateleina le faʻatinoga o faiga. E ofoina atu foi e le GaN le televave o suiga, e taua tele mo masini maualuga e pei o RF amplifiers ma malosiaga liliu.
Q2: E mafai ona ou faʻavasegaina le faʻasologa o le Si substrate mo laʻu talosaga?
A2:Ioe, matou te ofoina atucustomizable Si substrate orientationspei o le<111>, <100>, ma isi fa'atonuga fa'atatau ile mana'oga o lau masini. O le faʻatonuga o le Si substrate o loʻo i ai se sao taua i le faʻatinoina o masini, e aofia ai uiga eletise, amioga faʻafefe, ma le mautu masini.
Q3: O a faʻamanuiaga o le faʻaaogaina o gaN-on-Si wafers mo faʻaoga maualuga?
A3:GaN-on-Si wafers ofoina silisuiga saoasaoa, e mafai ai ona fa'agaoioia vave i laina maualuga pe a fa'atusatusa i le silikoni. O lenei mea latou te fetaui lelei moRFmamicrowavetalosaga, faʻapea foʻi ma le maualuga o taimimasini eletisepei o leHEMTs(High Electron Mobility Transistors) maRF amplifiers. Ole maualuga ole eletise ole gaN e mafua ai foi ona maualalo le gau o suiga ma faʻaleleia atili le lelei.
Q4: O a filifiliga doping o loʻo avanoa mo GaN-on-Si wafers?
A4:Matou te ofoina umaN-ituaigamaP-ituaigafilifiliga doping, lea e masani ona faʻaaogaina mo ituaiga eseese o masini semiconductor.N-ituaiga dopinge fetaui lelei motransistors malosimaRF amplifiers, a oP-ituaiga dopinge masani ona faʻaaogaina mo masini optoelectronic e pei o LED.
Fa'ai'uga
O la matou Customized Gallium Nitride i luga ole Silicon (GaN-on-Si) Wafers e maua ai le fofo lelei mo faʻaoga maualuga, maualuga, ma le maualuga o le vevela. Fa'atasi ai ma fa'asinomaga Si substrate fa'apitoa, resistivity, ma le N-type/P-type doping, o nei wafers e fa'afetaui e fa'afetaui mana'oga fa'apitoa o alamanuia e amata mai i le eletise eletise ma masini ta'avale i feso'otaiga RF ma tekonolosi LED. O le fa'aogaina o meatotino maualuluga a le GaN ma le fa'alauteleina o le silikoni, o nei mea fa'apipi'i e ofoina atu le fa'aleleia atili o le fa'atinoga, lelei, ma le fa'amaonia i le lumana'i mo masini o isi augatupulaga.
Auiliili Ata
