GaN i luga ole Matatio 4-Inisi: Filifiliga Mataiata Fa'apitoa E aofia ai le JGS1, JGS2, BF33, ma le Kuata masani.
Vaega
●Apo'a Lautele:GaN ei ai le 3.4 eV bandgap, lea e mafai ai ona sili atu le lelei ma sili atu le tumau i lalo o tulaga maualuga-voltage ma maualuga-vevela faʻatusatusa i mea masani semiconductor e pei o le silicon.
●Liga tioata e mafai ona fa'atulagaina:Avanoa ma JGS1, JGS2, BF33, ma Ordinary Quartz glass options e fa'amalieina ai mana'oga eseese fa'avevela, fa'ainisinia, ma fa'atinoga.
●Avea maualuga:O le maualuga o le vevela o le GaN e fa'amautinoa ai le fa'amama lelei o le vevela, ma fa'alelei lelei ai nei mea'ai mo fa'aoga eletise ma masini e maua ai le vevela maualuga.
●Mata'amiloga Malosi maualuga:O le malosi ole GaN e fa'atumauina ai volita maualuga e talafeagai ai nei mea'ai mo transistors eletise ma fa'aoga maualuga.
●Malosi Fa'ainisinia Lelei:O mea tioata, faʻatasi ma meatotino a GaN, e maua ai le malosi faʻainisinia, faʻaleleia le tumau o le wafer i siosiomaga faigata.
●Fa'aiti'itia tau o le gaosiga:Pe a faʻatusatusa i le GaN-on-Silicon poʻo le GaN-on-Sapphire wafers, o le GaN-on-glass o se fofo sili atu ona taugofie mo le gaosiga tele o masini maualuga.
●Tailored Optical Properties:O filifiliga tioata eseese e mafai ai mo le faʻavasegaina o uiga faʻapitoa o le wafer, e talafeagai mo faʻaoga i optoelectronics ma photonics.
Fa'amatalaga Fa'apitoa
| Parameter | Taua |
| Tele ole Wafer | 4-inisi |
| Filifiliga Lapisi tioata | JGS1, JGS2, BF33, Kuata masani |
| GaN Layer Mafiafia | 100 nm – 5000 nm (fa'atonu) |
| GaN Bandgap | 3.4 eV (ava lautele) |
| Malolo malepe | E oʻo atu i le 1200V |
| Amioga vevela | 1.3 – 2.1 W/cm·K |
| Feavea'i Electron | 2000 cm²/V·s |
| Fa'asaa ole Laupapa | RMS ~0.25 nm (AFM) |
| GaN Pepa Tetee | 437.9 Ω·cm² |
| Tete'e | Semi-insulating, N-ituaiga, P-ituaiga (fa'atonuina) |
| Fa'aliliuga Mata | >80% mo va'aia ma UV umi galu |
| Wafer Warp | <25 µm (maualuga) |
| Fa'ai'uga | SSP (faaiila itu-tasi) |
Talosaga
Optoelectronics:
GaN-on-glass wafers o lo'o fa'aaogaina lautele iLEDmadiodes leisaona o le GaN's maualuga le lelei ma le faʻatinoina o galuega. Le mafai ona filifili substrates tioata e pei oJGS1maJGS2fa'ataga mo le fa'avasegaina i le fa'amalamalama manino, fa'apena lelei mo le malosi-maualuga, maualuga-malamalamalanu moana / lanu meamata LEDmaUV lasers.
Photonics:
GaN-on-glass wafers e lelei mophotodetectors, fa'ainiti fa'atasi (PICs), mamasini fa'apitoa. O a latou mea e sili ona lelei e tuʻuina atu ai le malamalama ma le mautu maualuga i faʻaoga maualuga-telefoni e talafeagai aifesootaigamatekinolosi fa'alogo.
Malosiaga Faaeletonika:
Ona o lo latou vaeluaga lautele ma maualuga gau gau, GaN-on-glass wafers e faʻaaogaina i totonutransistors maualuga-manamafa'aliliuga malosi maualuga. O le mafaia e GaN ona faʻatautaia le maualuga o voltage ma le faʻamalo vevela e faʻamalieina aifa'aola malosi, Transistors mana RF, maeletise eletisei alamanuia ma tagata faatau talosaga.
Talosaga maualuga-Talosaga:
GaN-on-glass wafers e fa'aalia leleife'avea'i eletisema e mafai ona fa'agaoioi i le maualuga o le suiga o le saoasaoa, ma fa'amalieina aimasini eletise maualuga, masini microwave, maRF amplifiers. O vaega taua ia i totonu5G faiga feso'ota'iga, faiga radar, mafesootaiga satelite.
Talosaga Ta'avale:
GaN-on-glass wafers o loʻo faʻaaogaina foi i masini eletise, aemaise lava iuta i luga ole laupapa (OBCs)maDC-DC liliumo taavale eletise (EVs). O le malosi o le wafers e taulimaina ai le maualuga o le vevela ma le voltages e mafai ai ona faʻaogaina i le eletise eletise mo EVs, e ofoina atu le sili atu le lelei ma le faʻatuatuaina.
Mea Fa'afoma'i:
O meatotino a GaN ua avea ai foi ma mea faatosina mo le faaaogaina i totonuata fa'afoma'imamasini fa'afoma'i. O lona gafatia e faʻagaioi i voluma maualuga ma lona teteʻe i le faʻavevela e faʻalelei ai mo faʻaoga i totonumeafaigaluega fa'apitoamalasers faafomai.
Q&A
Q1: Aisea ua avea ai le GaN-on-glass ma se filifiliga lelei pe a faatusatusa i le GaN-on-Silicon poʻo le GaN-on-Sapphire?
A1:GaN-on-glass e ofoina atu le tele o mea lelei, e aofia aitau-leleimasili atu le puleaina o le vevela. E ui o le GaN-on-Silicon ma le GaN-on-Sapphire e maua ai le faʻatinoga sili ona lelei, o mea tioata tioata e taugofie, sili atu ona maua, ma faʻapitoa i tulaga o mea faʻapitoa ma masini. E le gata i lea, o gaN-on-glass wafers e maua ai le fa'atinoga lelei i mea uma e luaopitikamafa'aoga eletise maualuga.
Q2: O le a le eseesega i le va o le JGS1, JGS2, BF33, ma le masani o tioata Quartz?
A2:
- JGS1maJGS2o mea mata'eta'e mata'utia tulaga maualuga e iloa mo latoumaualuga le manino o matamafa'alauteleina vevela maualalo, faia lelei mo masini photonic ma optoelectronic.
- BF33ofo tioatamaualuga fa'asino fa'asinoma e fetaui lelei mo talosaga e manaʻomia ai le faʻaleleia atili o le faʻatinoga, pei olediodes leisa.
- Quartz masanimaua maualugamautu vevelamatetee atu i le radiation, e fa'atatau mo le maualuga o le vevela ma le fa'aogaina o le siosiomaga.
Q3: E mafai ona ou faʻavasegaina le resistivity ma le doping type mo GaN-on-glass wafers?
A3:Ioe, matou te ofoina atucustomizable resistivitymaituaiga doping(N-ituaiga poʻo le P-ituaiga) mo GaN-i-mata tioata mafimata. O lenei fetuutuuna'i e mafai ai ona fa'afetaui ia mea'ai i fa'aoga fa'apitoa, e aofia ai masini eletise, LED, ma faiga fa'ata.
Q4: O a faʻaoga masani mo GaN-on-glass i optoelectronics?
A4:I optoelectronics, GaN-on-glass wafers e masani ona faʻaaogaina molanu moana ma lanu meamata LED, UV lasers, maphotodetectors. O mea fa'apitoa fa'apitoa o le tioata fa'atagaina mo masini e maualugamoli moli, fa'apena lelei mo talosaga i totonufa'aalia tekinolosi, moli, mafaiga fa'afeso'ota'i mata.
Q5: E faʻafefea ona faʻatino e GaN-on-glass i faʻaoga maualuga?
A5:GaN-on-glass wafers ofo atulelei tele le gaoioi eletise, e mafai ai ona latou faia lelei i totonufa'aoga maualugapei o leRF amplifiers, masini microwave, ma5G faiga feso'ota'iga. O le maualuga o le malepelepe ma le maualalo o le gau o suiga e talafeagai momasini RF maualuga.
Q6: O le a le voltage malepe masani o gaN-on-glass wafers?
A6:GaN-on-glass wafers e masani ona lagolagoina voltage malepe e oo atu i1200V, ia talafeagai momaualuga-malosimamaualuga-voltagetalosaga. O la latou fa'alava lautele e mafai ai ona latou fa'aogaina le maualuga o voltage nai lo mea masani semiconductor pei o le silicon.
Q7: E mafai ona faʻaaogaina gaN-on-glass wafers i mea tau taavale?
A7:Ioe, o lo'o fa'aaogaina gaN-on-glass waferseletise eletise eletise, e aofia aiDC-DC liliumauta i luga o le laupapa(OBCs) mo taavale eletise. O lo latou gafatia e galue i le maualuga o le vevela ma le faʻaogaina o voltage maualuga e faʻamaonia ai mo nei talosaga faigata.
Fa'ai'uga
O la matou GaN i luga o Glass 4-Inch Wafers e ofoina atu se fofo tulaga ese ma faʻapitoa mo le tele o talosaga i optoelectronics, eletise eletise, ma photonics. Fa'atasi ai ma filifiliga fa'amea tioata e pei o le JGS1, JGS2, BF33, ma le Ordinary Quartz, e tu'uina atu ai e nei u'amea le agava'a i mea fa'ainisinia ma mea fa'apitoa, e mafai ai ona fa'aogaina fofo mo masini maualuga ma maualuga. Pe mo LED, laser diodes, poʻo RF talosaga, GaN-i-mata tioata wafers
Auiliili Ata
