HPSI SiCOI wafer 4 6inch Hydropholic fusifusia

HPSI SiCOI wafer 4 6inch Hydropholic So'oga Fa'apitoa Ata

Fa'amatalaga Puupuu:

O faʻamaʻi faʻamaʻi maualuga (HPSI) 4H-SiCOI o loʻo faʻalauteleina e faʻaogaina ai le faʻaogaina o fesoʻotaʻiga ma tekinolosi faʻamaʻi. E fauina le fafie e ala i le fa'apipi'iina o mea fa'apipi'i 4H HPSI silicon carbide i luga o fa'amea vevela e ala i auala autu e lua: fa'apipi'i hydrophilic (tu'usa'o) ma le fa'aogaina o luga. O le mea mulimuli e faʻafeiloaʻi ai se faʻavasegaga faʻaleleia (e pei o le silicon amorphous, alumini oxide, poʻo le titanium oxide) e faʻaleleia ai le lelei o le fusi ma faʻaitiitia ai faʻamaʻi, aemaise lava talafeagai mo faʻaoga mata. O le pulea mafiafia o le lapisi carbide silicon e maua e ala i le fa'avaeina o le ion implantation-based SmartCut po'o le oloina ma le CMP polesi faiga. O le SmartCut e ofoina atu le maualuga o le mafiafia o le mafiafia (50nm-900nm ma le ± 20nm tutusa) ae mafai ona faʻaleagaina sina tioata ona o le faʻapipiʻiina o ion, e aʻafia ai le faʻaogaina o masini mata. O le oloina ma le CMP polesi e aloese mai le faaleagaina o mea ma e sili atu mo ata mafiafia (350nm-500µm) ma quantum poʻo PIC talosaga, e ui lava e itiiti ifo le mafiafia tutusa (± 100nm). Fa'amauina 6-inisi wafers o lo'o iai le 1µm ±0.1µm SiC layer i luga ole 3µm SiO2 layer i luga ole 675µm Si substrates ma tulaga ese le lamolemole (Rq <0.2nm). O nei HPSI SiCOI wafers e faʻafeiloaʻi i MEMS, PIC, quantum, ma masini faʻapipiʻi faʻapipiʻi faʻatasi ai ma mea sili ona lelei ma le faʻaogaina o gaioiga.

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Vaega

SiCOI Wafer (Silicon Carbide-on-Insulator) Meatotino Vaaiga Aoao

SiCOI wafers o se mea fou-tupulaga semiconductor substrate tuufaatasia Silicon Carbide (SiC) ma se insulating layer, masani SiO₂ po o le safaira, e faaleleia ai le faatinoga i le eletise eletise, RF, ma photonics. O loʻo i lalo se faʻamatalaga auiliili o latou meatotino ua faʻavasegaina i vaega autu:

Meatotino	Fa'amatalaga
Meafaitino	Silicon Carbide (SiC) fa'amau fa'apipi'i i luga o se mea fa'amama (e masani lava SiO₂ po'o le safaira)
Fauga tioata	E masani lava 4H poʻo 6H polytypes o SiC, lauiloa mo le maualuga tioata ma le tutusa
Eletise Meatotino	Malosi eletise malepelepe maualuga (~ 3 MV / cm), vaeluaga lautele (~ 3.26 eV mo 4H-SiC), maualalo leakage i le taimi nei
Amioga vevela	O le maualuga o le vevela (~ 300 W / m · K), e mafai ai ona faʻafefe lelei le vevela
Laega Dielectric	Laega fa'amama (SiO₂ po'o le safaira) e maua ai le fa'aesea o le eletise ma fa'aitiitia ai le malosi o le parasitic.
Meatotino Fa'ainisinia	Malosi maualuga (~ 9 Mohs scale), sili atu le malosi faʻainisinia, ma le faʻamautuina o le vevela
Fa'ai'uga	E masani lava ultra-smooth ma maualalo le tele o faaletonu, talafeagai mo le gaosiga o masini
Talosaga	Malosiaga eletise, masini MEMS, masini RF, masini e manaʻomia ai le maualuga o le vevela ma le faʻapalepale voltage

SiCOI wafers (Silicon Carbide-on-Insulator) o loʻo faʻatusalia ai se fausaga semiconductor substrate maualuga, e aofia ai se vaega manifinifi maualuga maualuga o le silicon carbide (SiC) faʻapipiʻi i luga o se mea faʻapipiʻi, e masani lava o le silicon dioxide (SiO₂) poʻo le safaira. Silicon carbide o se semiconductor lautele-bandgap lauiloa mo lona gafatia e tetee atu i voluma maualuga ma le maualuga o le vevela, faʻatasi ai ma le lelei tele o le faʻaogaina o le vevela ma le malosi faʻainisinia sili atu, e faʻalelei ai mo le maualuga o le mana, maualuga, ma le maualuga o le vevela eletise.

O le insulating layer i SiCOI wafers e maua ai le faʻaesea eletise lelei, faʻaitiitia ai le malosi o le parasitic ma le tafe i le va o masini, ma faʻaleleia ai le faʻaogaina o le masini atoa ma le faʻamaoni. E fa'alelei sa'o le fa'aele'ele ina ia maua ai le ultra-smoothness fa'atasi ai ma ni fa'aletonu laiti, e fa'afetaui ai le mana'oga fa'apitoa o le fa'atupuina o masini fa'atosina ma nano.

O lenei fausaga meafaitino e le gata ina faʻaleleia ai uiga eletise o masini SiC ae faʻaleleia atili ai le puleaina o le vevela ma le mautu o masini. O le iʻuga, o le SiCOI wafers e faʻaaogaina lautele i le eletise eletise, vaega ole leitio (RF), masini microelectromechanical system (MEMS), ma mea tau eletise maualuga. Aotelega, SiCOI wafers tu'ufa'atasia tulaga fa'apitoa fa'aletino o le silicon carbide fa'atasi ai ma fa'amanuiaga fa'amama fa'aeletise o se insulator layer, e maua ai se fa'avae lelei mo le isi augatupulaga o masini semiconductor maualuga-faatinoga.

SiCOI wafer's talosaga

Mea Fa'aeletonika Malosiaga

Su'e eletise ma maualuga, MOSFET, ma diodes

Fa'amanuiaga mai le va tele a le SiC, maualuga le malepelepe voltage, ma le mautu o le vevela

Faʻaitiitia le paʻu o le paoa ma faʻaleleia atili le lelei i faiga faʻaliliuina eletise

Leitio Auala (RF) Vaega

Transistors ma amplifiers maualuga

Ole malosi ole parasitic maualalo ona o le insulating layer e faʻaleleia ai le faʻatinoga o le RF

E talafeagai mo fesoʻotaʻiga 5G ma faʻaoga radar

Microelectromechanical System (MEMS)

Sensors ma actuators galue i siosiomaga faigata

O le malosi fa'ainisinia ma le inertness o vaila'au e fa'alautele ai le ola ole masini

E aofia ai masini fa'amalosi, fa'avavevave, ma gyroscopes

Mea Fa'aeletonika Maualuluga

Fa'aeletonika mo ta'avale, va'alele, ma fa'aoga tau alamanuia

Fa'atino ma le fa'atuatuaina i le maualuga o le vevela e fa'aletonu ai le silikoni

Meafaigaluega Photonic

Tu'ufa'atasi ma vaega optoelectronic i luga o mea fa'apipi'i

Fa'aagaaga ata fa'ainitaneti fa'atasi ma fa'aleleia atili le fa'aogaina o le vevela

SiCOI wafer's Q&A

Q：o le a le SiCOI wafer

A:SiCOI wafer e tu mo le Silicon Carbide-on-Insulator wafer. O se ituaiga o mea fa'apipi'i semiconductor lea e fa'apipi'i ai se vaega manifinifi o le silicon carbide (SiC) i luga o se mea fa'amama, e masani lava o le silicon dioxide (SiO₂) po'o nisi taimi o le safaira. O lenei fausaga e foliga tutusa i le manatu i le sili lauiloa Silicon-on-Insulator (SOI) wafers ae faʻaoga SiC nai lo le silicon.