Indium Antimonide (InSb) wafers N ituaiga P ituaiga Epi ua sauni e tatala Te doped po'o Ge doped 2inch 3inch 4inch mafiafia Indium Antimonide (InSb) wafers
Vaega
Filifiliga Doping:
1. Fa'amuta:O nei wafers e saoloto mai soʻo se vailaʻau doping, e faʻapitoa ai mo faʻaoga faʻapitoa e pei o le tuputupu aʻe o le epitaxial.
2. Te Doped (N-ituaiga):Tellurium (Te) doping e masani ona faʻaaogaina e fai ai N-type wafers, lea e fetaui lelei mo faʻaoga e pei o infrared detectors ma eletise televave.
3.Ge Doped (I-ituaiga P):Germanium (Ge) doping e fa'aaogaina e fai ai ma'i fa'ama'i P-ituaiga, e ofoina atu le pu maualuga mo fa'aoga semiconductor.
Tele Filifiliga:
1. Available i le 2-inisi, 3-inisi, ma le 4-inisi le lautele. O nei wafers e fa'amalieina mana'oga fa'atekonolosi eseese, mai su'esu'ega ma atina'e e o'o atu i gaosiga tetele.
2.Pcise diameter tolerances mautinoa le ogatasi i vaega uma, faatasi ai ma le lautele o 50.8±0.3mm (mo 2-inisi wafers) ma 76.2±0.3mm (mo 3-inisi wafers).
Pulea mafiafia:
1. O loʻo maua le wafers ma le mafiafia o le 500 ± 5μm mo le faʻatinoga lelei i faʻaoga eseese.
2. Faʻaopoopoga faʻaopoopoga e pei ole TTV (Total Thickness Variation), BOW, ma Warp e faʻatonutonuina ma le faʻaeteete ina ia mautinoa le maualuga o le tutusa ma le lelei.
Tulaga Tulaga:
1. O fafie e sau ma se mea faʻailo / togitogiina mo le faʻaleleia atili o le faʻaogaina ma le eletise.
2. O nei mea e sili ona lelei mo le tuputupu aʻe o le epitaxial, e ofoina atu se faʻavae lamolemole mo le faʻaogaina atili i masini maualuga.
Epi-Sauni:
1. O le InSb wafers e epi-sauni, o lona uiga ua latou muai togafitia mo faiga epitaxial deposition. O le mea lea e lelei ai mo fa'aoga i le gaosiga o semiconductor lea e mana'omia ona fa'atupuina ai fa'apalapala epitaxial i luga o le wafer.
Talosaga
1. Infrared Detectors:InSb wafers e masani ona fa'aoga ile infrared (IR) su'esu'eina, aemaise ile vaeluagalemu ole umi galu infrared (MWIR). E mana'omia nei fa'ama'i mo le va'ai i le po, fa'ata vevela, ma fa'aogaina o spectroscopy infrared.
2. High-Speed Electronics:Ona o le maualuga o le eletise eletise, o loʻo faʻaogaina ai le InSb wafers i masini faʻaeletonika televave e pei o transistors maualuga, quantum well device, ma high-electron mobility transistors (HEMTs).
3. Quantum Well Devices:O le vaapiapi pu'upu'u ma le lelei o le fe'avea'i fa'aeletonika e mafai ai ona fa'aoga fa'aoga i masini vaieli InSb. O nei masini o vaega autu i lasers, detectors, ma isi optoelectronic system.
4.Spintronic Devices:O lo'o su'esu'eina fo'i le InSb i fa'aoga spintronic, lea e fa'aogaina ai le vili eletise mo fa'amatalaga. Ole so'otaga fa'ata'amilo maualalo ole mea e fa'amalieina mo nei masini fa'atino maualuga.
5. Terahertz (THz) Talosaga Radiation:O masini fa'avae InSb o lo'o fa'aogaina i talosaga fa'avevela THz, e aofia ai su'esu'ega fa'asaienisi, ata, ma fa'amatalaga o mea. Latou te mafaia tekinolosi faʻapitoa e pei ole THz spectroscopy ma THz imaging system.
6. Thermoelectric masini:O mea fa'apitoa a le InSb ua avea ai ma mea fa'apitoa mo fa'aoga thermoelectric, lea e mafai ona fa'aogaina e fa'aliliu lelei ai le vevela i le eletise, ae maise i fa'aoga fa'apitoa e pei o tekonolosi avanoa po'o le gaosiga o le eletise i si'osi'omaga ogaoga.
Fua Fa'atatau
| Parameter | 2-inisi | 3-inisi | 4-inisi |
| Diamita | 50.8±0.3mm | 76.2±0.3mm | - |
| mafiafia | 500±5μm | 650±5μm | - |
| Laufanua | Faila/Usi | Faila/Usi | Faila/Usi |
| Ituaiga Doping | Tatala, Te-doped (N), Ge-doped (P) | Tatala, Te-doped (N), Ge-doped (P) | Tatala, Te-doped (N), Ge-doped (P) |
| Fa'atonuga | (100) | (100) | (100) |
| afifi | Nofofua | Nofofua | Nofofua |
| Epi-Sauni | Ioe | Ioe | Ioe |
Fa'a Eletise mo Te Doped (N-Type):
- Fe'avea'i: 2000-5000 cm²/V·s
- Tete'e: (1-1000) Ω·cm
- EPD (Fa'aletonu Fa'aletonu): ≤2000 faaletonu/cm²
Fua Fa'aeletise mo Ge Doped (P-Type):
- Fe'avea'i: 4000-8000 cm²/V·s
- Tete'e: (0.5-5) Ω·cm
- EPD (Fa'aletonu Fa'aletonu): ≤2000 faaletonu/cm²
Fa'ai'uga
Indium Antimonide (InSb) wafers o se mea taua mo le tele o faʻaoga maualuga-faʻatinoga i matata o mea tau eletise, optoelectronics, ma tekonolosi infrared. Faatasi ai ma le lelei tele o le faʻaogaina o le eletise, faʻaogaina le vaʻaia-orbit, ma le tele o filifiliga doping (Te mo N-ituaiga, Ge mo P-ituaiga), InSb wafers e lelei mo le faʻaogaina i masini e pei o infrared detectors, transistors televave, quantum well device, ma masini spintronic.
O lo'o maua i lapopo'a eseese (2-inisi, 3-inisi, ma le 4-inisi), fa'atasi ai ma le mafiafia sa'o ma le epi-sauni luga, fa'amautinoa latou te fa'amalieina mana'oga fa'aonaponei semiconductor fa'aonaponei. O nei wafers e lelei atoatoa mo faʻaoga i matāʻupu e pei ole suʻesuʻeina o le IR, eletise televave, ma le THz radiation, e mafai ai ona faʻaogaina tekonolosi i suʻesuʻega, alamanuia, ma puipuiga.
Auiliili Ata
