InSb wafer 2 inisi 3 inisi le fa'asalaina Ntype P fa'asinomaga 111 100 mo Infrared Detectors

Fa'amatalaga Puupuu:

Indium Antimonide (InSb) wafers o mea autu ia e faʻaaogaina i tekinolosi e iloa ai infrared ona o lo latou vaapiapi vaapiapi ma le maualuga o le eletise eletise. E maua i le 2-inisi ma le 3-inisi le lautele, o nei wafers o loʻo ofoina atu i le le faʻaogaina, N-ituaiga, ma le P-ituaiga fesuiaiga. E fau ma fau ma fa'ata'ita'iga o le 100 ma le 111, e mafai ai ona fetu'una'i mo su'esu'ega infrared ma fa'aoga semiconductor. O le maualuga o le maaleale ma le maualalo o le pisapisao o InSb wafers e sili ona lelei mo le faʻaogaina i totonu ole vaeluaga o le galu infrared (MWIR) detectors, infrared imaging system, ma isi faʻaoga optoelectronic e manaʻomia ai le saʻo ma le maualuga o le faʻatinoga.

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Fa'amatalaga Oloa

Faailoga o oloa

Vaega

Filifiliga Doping:
1. Fa'amuta:O nei wafers e saoloto mai soʻo se vailaʻau doping ma e faʻaaoga muamua mo faʻaoga faʻapitoa e pei o le tuputupu aʻe o le epitaxial, lea e galue ai le wafer o se mea mama mama.
2.N-Type (Te Doped):Tellurium (Te) doping o loʻo faʻaaogaina e fai ai N-type wafers, e ofoina atu le maualuga o le eletise ma faʻaogaina mo faʻamatalaga infrared, eletise televave, ma isi talosaga e manaʻomia ai le lelei o le eletise.
3.P-Type (Ge Doped):O le Germanium (Ge) doping e fa'aaogaina e fai ai fa'aputu P-ituaiga, e maua ai le maualuga o le pu ma ofoina atu le fa'atinoga sili ona lelei mo masini infrared ma photodetectors.

Tele Filifiliga:
1. O lo'o maua i le 2-inisi ma le 3-inisi le lautele. E fa'amautinoaina le feso'ota'iga ma fa'agaioiga ma masini faufale semiconductor eseese.
2. O le 2-inisi wafer o loʻo i ai le 50.8 ± 0.3mm le lautele, ae o le 3-inch wafer ei ai le 76.2 ± 0.3mm le lautele.

Fa'atonuga:
1. O loʻo maua le wafers faʻatasi ai ma faʻasologa o le 100 ma le 111. O le 100 orientation e lelei tele mo le televave o le eletise ma le infrared detectors, ae o le 111 orientation e masani ona faʻaaogaina mo masini e manaʻomia ai mea faʻapitoa eletise poʻo mea faʻapitoa.

Tulaga Tulaga:
1. O nei wafers e sau i luga o le polesi / etched mo le lelei sili ona lelei, e mafai ai ona sili atu le faatinoga i talosaga e manaʻomia ai uiga faʻapitoa poʻo le eletise.
2.O le sauniuniga i luga e mautinoa ai le maualalo o le faʻaletonu o le tino, o le faʻaogaina o nei wafers lelei mo faʻamatalaga infrared detection lea e taua tele ai le faʻatinoina o le faʻatinoga.

Epi-Sauni:
1. O nei wafers e epi-saunia, faia latou talafeagai mo talosaga e aofia ai le tuputupu aʻe epitaxial lea o le a teuina isi vaega o mea i luga o le wafer mo semiconductor alualu i luma po o le optoelectronic masini fabrication.

Talosaga

1. Infrared Detectors:InSb wafers o loʻo faʻaaogaina lautele i le fausiaina o mea e iloa ai le infrared, aemaise lava ile vaeluaga o le umi ole galu (MWIR) laina. E taua mo faiga va'ai i le po, fa'ata vevela, ma fa'aoga a le militeri.
2. Infrared Imaging Systems:O le maualuga o le maaleale o InSb wafers e mafai ai ona saʻo ata infrared i vaega eseese, e aofia ai le saogalemu, mataʻituina, ma suʻesuʻega faasaienisi.
3. Saosaoa Fa'aeletonika:Ona o le maualuga o le eletise eletise, o nei wafers o loʻo faʻaaogaina i masini faʻaeletoroni faʻapitoa e pei o transistors televave ma masini optoelectronic.
4. Quantum Well Devices:InSb wafers e lelei mo fa'aoga lelei i le lasers, detectors, ma isi optoelectronic system.

Fua Fa'atatau

Parameter	2-inisi	3-inisi
Diamita	50.8±0.3mm	76.2±0.3mm
mafiafia	500±5μm	650±5μm
Laufanua	Faila/Usi	Faila/Usi
Ituaiga Doping	Tatala, Te-doped (N), Ge-doped (P)	Tatala, Te-doped (N), Ge-doped (P)
Fa'atonuga	100, 111	100, 111
afifi	Nofofua	Nofofua
Epi-Sauni	Ioe	Ioe

Fua Fa'aeletise mo Te Doped (N-Type):

Fe'avea'i: 2000-5000 cm²/V·s
Tete'e: (1-1000) Ω·cm
EPD (Fa'aletonu Fa'aletonu): ≤2000 faaletonu/cm²

Fua Fa'aeletise mo Ge Doped (P-Type):

Fe'avea'i: 4000-8000 cm²/V·s
Tete'e: (0.5-5) Ω·cm

EPD (Fa'aletonu Fa'aletonu): ≤2000 faaletonu/cm²

Q&A (Frequently Asked Questions)

Q1: O le a le ituaiga doping lelei mo faʻamatalaga faʻamatalaga infrared?

A1:Te-doped (ituaiga N)wafers e masani lava o le filifiliga sili lea mo talosaga infrared detectors, aua latou te ofoina atu le maualuga o le eletise ma le lelei o le faatinoga i le ogatotonu o le umi o le galu (MWIR) puʻeina ma faʻataʻitaʻiga.

Q2: E mafai ona ou faʻaogaina nei mea faʻapipiʻi mo faʻaoga eletise televave?

A2: Ioe, InSb wafers, aemaise lava i latou e iaiN-ituaiga dopingma le100 aoaoga, e fetaui lelei mo mea tau eletise maualuga e pei o transistors, quantum well device, ma vaega optoelectronic ona o le maualuga o le eletise eletise.

Q3: O a eseesega i le va o le 100 ma le 111 orientations mo InSb wafers?

A3: Le100fa'asinomaga e masani ona fa'aogaina mo masini e mana'omia ai le fa'atinoga fa'aeletonika maualuga, a'o le111fa'atonuga e masani ona fa'aoga mo fa'aoga fa'apitoa e mana'omia ai uiga fa'ale-eletise po'o fa'apitoa, e aofia ai nisi masini fa'apitoa ma masini.

Q4: O le a le taua o le Epi-Ready feature mo InSb wafers?

A4: LeEpi-Sauniuiga o lona uiga o le wafer ua uma ona togafitia mo faiga epitaxial deposition. E taua tele lenei mea mo talosaga e manaʻomia ai le tuputupu aʻe o faʻaopoopoga o mea i luga o le wafer, e pei o le gaosiga o masini semiconductor poʻo masini optoelectronic.

Q5: O a faʻaoga masani a InSb wafers i totonu ole fanua tekonolosi infrared?

A5: InSb wafers e masani ona faʻaaogaina i le suʻesuʻeina o le infrared, faʻataʻitaʻiga vevela, faiga faʻaaliga i le po, ma isi tekinolosi faʻalogoina infrared. O le maualuga o latou lagona ma le maualalo o le pisa e lelei aiinfrared ole umi ole galu (MWIR)su'esu'e.

Q6: E faʻafefea ona aʻafia e le mafiafia o le wafer lona faʻatinoga?

A6: O le mafiafia o le wafer e taua tele i lona mautu masini ma uiga eletise. E masani ona fa'aoga fa'ama'i manifinifi i fa'aoga ma'ale'ale e mana'omia ai le fa'atonu sa'o o meafaitino, a'o fa'ato'aga mafiafia e maua ai le fa'aleleia atili o le tumau mo nisi fa'aoga tau pisinisi.

Q7: E fa'afefea ona ou filifilia le lapopo'a talafeagai mo la'u talosaga?

A7: Ole tele ole wafer talafeagai e faʻalagolago ile masini faʻapitoa poʻo le faiga o loʻo mamanuina. E masani ona fa'aoga u'amea la'ititi (2-inisi) mo su'esu'ega ma fa'aoga la'ititi, a'o ufi lapo'a (3-inisi) e masani ona fa'aoga mo le gaosiga tele ma masini tetele e mana'omia ai nisi mea.

Fa'ai'uga

InSb wafers i totonu2-inisima3-inisitetele, matatalaina, N-ituaiga, maP-ituaigafesuiaiga, e sili ona taua i semiconductor ma optoelectronic talosaga, aemaise i infrared detection systems. O le100ma111orientations maua fetuutuunai mo manaoga faatekonolosi eseese, mai le televave faaeletonika i faiga infrared ata. Faatasi ai ma le tulaga ese o latou fe'avea'i eletise, maualalo le pisapisao, ma sa'o lelei tulaga, o nei wafers e lelei mova'aiga infrared umi ole ogatotonuma isi talosaga maualuga-faatinoga.