LiTaO3 Lithium Tantalate Ingots ma Fe/Mg Doping Fa'apitoa 4inch 6inch 8inch mo le Fa'alogoina Alamanuia

LiTaO3 Lithium Tantalate Ingots ma Fe/Mg Doping Fa'apitoa 4inch 6inch 8inch mo Industrial Sensing Fa'aaliga Ata

Fa'amatalaga Puupuu:

LiTaO3 Ingots (Lithium Tantalate Ingots), e avea ma mea autu mo le tolu-augatupulaga lautele-bandgap semiconductors ma optoelectronics, faʻaaogaina lo latou maualuga Curie vevela (607°C), lautele manino lautele (400-5,200 nm), sili electromechanical coupling coefficient (Kt²> 15%), ma maualalo dielectric gau (tanδ <2%) e suia 5G fesootaiga, quantum computing, ma photonic tuufaatasia. E ala mai i tekonolosi faufale e pei o le felauaiga ausa faaletino (PVT) ma le teuina o ausa vailaʻau (CVD), matou te tuʻuina atu le X/Y/Z-cut, 42°Y-cut, ma poled i taimi taʻitasi (PPLT) i 3-8-inisi faʻamatalaga, faʻaalia micropipe density <0.1 cm⁻² ma dislocation density <500 cm². O a matou 'au'aunaga e aofia ai le Fe / Mg doping, fa'aliliuga fa'afefeteina o le proton, ma le fa'aogaina o le heterogeneous integration (POI) e fa'avae i luga o le silicon, fa'afeso'ota'ia filiga mata'utia, fa'apogai o le malamalama fa'atele, ma fa'amatalaga infrared. O lenei mea e faʻaosoina ai faʻalavelave i le faʻaitiitiga, faʻagaioiga maualuga, ma le faʻamautuina o le vevela, faʻavavevave le suia o aiga ma le alualu i luma faatekinolosi.

Auina imeli ia matou

Vaega

Fa'agata fa'atekinisi

Fa'amatalaga	masani	Sa'o Maualuga
Meafaitino	LiTaO3(LT)/ LiNbO3 wafers	LiTaO3(LT)/LiNbO3 wafers
Fa'atonuga	X-112°Y,36°Y,42°Y±0.5°	X-112°Y,36°Y,42°Y±0.5°
Fa'atasi	30″	10''
Fa'asa'o	10′	5'
tulaga maualuga	40/20	20/10
Fa'asesega i luma galu	λ/4@632nm	λ/8@632nm
Lau'ele'ele mafolafola	λ/4@632nm	λ/8@632nm
Avanoa manino	>90%	>90%
Chamfer	<0.2×45°	<0.2×45°
Mafia/Diamita Fa'apalepale	±0.1 mm	±0.1 mm
Aupito maualuga	dia150×50mm	dia150×50mm

XKH Au'aunaga

1. Fa'ato'aga Ingot Tele'

Tele ma le tipiina: 3–8-inisi ingots ma le X/Y/Z-cut, 42°Y-cut, ma le masani tipi angular (±0.01° le faapalepale).

Puleaina o le Doping: Fe/Mg co-doping e ala i le Czochralski method (concentration range 10¹⁶–10¹⁹ cm⁻³) e fa'amalieina ai le tete'e o le photorefractive ma le mautu o le vevela.

2. Fa'atekonolosi Fa'agasologa Maua'i'

Tu'ufa'atasiga Fa'atasi: LiTaO3 fa'apipi'i fa'apipi'i (POI) fa'atatau i le silisi ma le mafiafia (300-600 nm) ma le fa'avevelaina o le vevela e o'o atu i le 8.78 W/m·K mo fa'amama sa'o maualuga o le SAW.

Faiga Fa'ata'i Galu: Fa'aliliuga o le Proton (PE) ma le fesuia'iga o le proton exchange (RPE), fa'ataunu'uina ta'iala fa'asolo (Δn>0.7) mo fa'atonuga eletise eletise (bandwidth>40 GHz).

3. Faiga Pulea Tulaga Lelei

Su'ega Fa'ai'uga: Fa'ailoga Raman (fa'amaonia polytype), XRD (crystallinity), AFM (surface morphology), ma su'esu'ega tutusa opitika (Δn <5×10⁻⁵).

4. Lagolago i le Global Supply Chain

Gaosi Gaosi: Fa'alemasina masina>5,000 ingots (8-inisi: 70%), lagolago 48-itula fa'alavelave fa'afuase'i.

Feso'ota'iga Logistics: Fa'asalalauina i Europa, Amerika i Matu, ma Asia-Pasefika e ala i uta ea/sami fa'atasi ai ma afifi e pulea le vevela.

5. Atina'e Fa'ainisinia

Labs R&D Soofaatasi: Galulue faʻatasi i luga o faʻasalalauga tuʻufaʻatasia faʻataʻitaʻiga (faʻataʻitaʻiga, SiO2 faʻapipiʻi lalo-maualalo lapisi).

Aotelega

LiTaO3 Ingots o lo'o avea ma mea fa'ata'atia e toe fa'afo'i ai le optoelectronics ma le quantum technologies. E ala i mea fou i le tuputupu aʻe tioata (faʻataʻitaʻiga, PVT), faʻaitiitia faʻaletonu, ma tuʻufaʻatasiga eseese (faʻataʻitaʻiga, POI), matou te tuʻuina atu fofo maualuga-faʻalagolago, taugofie mo fesoʻotaʻiga 5G / 6G, quantum computing, ma fale gaosi oloa IoT. O le tautinoga a le XKH i le faʻalauteleina o le faʻaitiitia o le faaletonu o le ingot ma le faʻalauteleina o le 8-inisi le gaosiga e faʻamautinoa ai le taʻitaʻia e tagata faʻatau i filifili sapalai o le lalolagi, faʻatautaia le isi vaitau o faʻalapotopotoga faʻanatura semiconductor lautele-bandgap.