N-Type SiC i luga ole Si Composite Substrates Dia6inisi

等级Vasega

U 级

P级

D级

Maulalo BPD Vasega

Gaosia Vasega

Fa'ailoga Tulaga

直径Diamita

150.0 mm±0.25mm

厚度mafiafia

500 μm±25μm

晶片方向Fa'asinomaga ole Wafer

Tu'u ese: 4.0° agai i le <11-20 > ±0.5°mo le 4H-N I luga ole axis: <0001>±0.5°mo le 4H-SI

主定位边方向Primary Flat

{10-10}±5.0°

主定位边长度Primary Flat Umi

47.5 mm±2.5 mm

边缘Fa'aesea pito

3 mm

总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp

≤15μm /≤40μm /≤60μm

微管密度和基面位错MPD&BPD

MPD≤1 cm-2

MPD≤5 cm-2

MPD≤15 cm-2

BPD≤1000cm-2

电阻率Tete'e

≥1E5 Ω·cm

表面粗糙度Talatala

Polani Ra≤1 nm

CMP Ra≤0.5 nm

裂纹(强光灯观测) #

Leai

Fa'aputu umi ≤10mm, tasi umi≤2mm

Ta'e i le malamalama maualuga

六方空洞（强光灯观测）*

Vaega fa'aopoopo ≤1%

Vaega fa'aopoopo ≤5%

Papatusi Hex ile malamalama maualuga

多型(强光灯观测)*

Leai

Vaega fa'aopoopo≤5%

Polytype Area e ala ile malamalama maualuga

划痕(强光灯观测)*&

3 matasi i le 1×wafer diameter

5 matasi i le 1×wafer diameter

Mata'ia i le malamalama maualuga

fa'aputuga umi

fa'aputuga umi

崩边# Pisinisi pito

Leai

5 faatagaina, ≤1 mm taitasi

表面污染物（强光灯观测）

Leai

Fa'aleagaina e le malamalama maualuga