P-ituaiga SiC substrate SiC wafer Dia2inch oloa fou

Fa'amatalaga Puupuu:

2 inisi P-Type Silicon Carbide (SiC) Wafer i le 4H poʻo le 6H polytype. E iai mea tutusa e pei o le N-type Silicon Carbide (SiC) wafer, e pei o le maualuga o le vevela, maualuga le vevela, maualuga eletise eletise, ma isi P-ituaiga SiC substrate e masani ona faʻaaogaina mo le gaosiga o masini eletise, aemaise lava le gaosiga o Insulated. Faitotoa Bipolar Transistors (IGBT). O le mamanu o le IGBT e masani ona aofia ai PN junctions, lea P-ituaiga SiC e mafai ona aoga mo le puleaina o amioga a masini.

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Fa'amatalaga Oloa

Faailoga o oloa

P-ituaiga silicon carbide substrates e masani ona faʻaaogaina e fai ai masini eletise, e pei ole Insulate-Gate Bipolar transistors (IGBTs).

IGBT = MOSFET + BJT, o se ki-off ki. MOSFET=IGFET(metal oxide semiconductor field effect tube, poʻo le insulated gate type field effect transistor). BJT (Bipolar Junction Transistor, lea e taʻua foi o le transistor), bipolar o lona uiga e lua ituaiga o eletise ma pu e aofia ai i le faʻagasologa o galuega, e masani lava o loʻo i ai le PN junction o loʻo aʻafia i le faʻatautaia.

O le 2-inisi p-type silicon carbide (SiC) wafer o loʻo i le 4H poʻo le 6H polytype. E i ai uiga tutusa i le n-type silicon carbide (SiC) wafers, e pei o le maualuga o le vevela, maualuga le vevela, ma le maualuga o le eletise. p-ituaiga SiC substrates e masani ona faʻaaogaina i le fausiaina o masini eletise, aemaise lava mo le faʻaogaina o le insulated-gate bipolar transistors (IGBTs). o le mamanu o IGBT e masani ona aofia ai PN junctions, lea e aoga ai le p-ituaiga SiC mo le puleaina o amioga a le masini.