Oloa fou mo le substrate SiC ituaiga-P SiC wafer Dia2inch

E masani ona faʻaaogaina mea e fai ai le silicon carbide ituaiga-P e fai ai masini eletise, e pei o Insulate-Gate Bipolar transistors (IGBTs).

IGBT= MOSFET+BJT, o se ki e ki ma tape. MOSFET=IGFET(metal oxide semiconductor field effect tube, po'o le insulated gate type field effect transistor). BJT(Bipolar Junction Transistor, e ta'ua fo'i o le transistor), o lona uiga o le bipolar e lua ituaiga o ave eletise ma pu e a'afia i le fa'agasologa o le fa'aosofiaga i le galuega, e masani lava ona i ai le PN junction e a'afia i le fa'aosofiaga.

O le 2-inisi p-type silicon carbide (SiC) wafer o loʻo i le 4H poʻo le 6H polytype. E tutusa ona uiga ma n-type silicon carbide (SiC) wafers, e pei o le teteʻe maualuga i le vevela, maualuga le thermal conductivity, ma le maualuga o le electrical conductivity. O p-type SiC substrates e masani ona faʻaaogaina i le gaosiga o masini eletise, aemaise lava mo le gaosiga o insulated-gate bipolar transistors (IGBTs). O le mamanuina o IGBTs e masani ona aofia ai PN junctions, lea e aoga ai le p-type SiC mo le puleaina o le amio a le masini.