Oloa
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Auala e fa'aogaina ai luga ole laisa leisa tioata safaira-doped titanium-doped
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8inch 200mm Silicon Carbide SiC Wafers 4H-N ituaiga Gaosia vasega 500um mafiafia
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2Inisi 6H-N Silicon Carbide Substrate Sic Wafer Faila Faila Fa'aa'oa'i Palemia Vasega Mos Vasega
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200mm 8inch GaN i luga o le safaira Epi-layer wafer substrate
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Sapphire tube KY Method all transparent Customizable
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6 Inisi Conductive SiC Composite Substrate 4H Diameter 150mm Ra≤0.2nm Warp≤35μm
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Infrared Nanosecond Laser Drilling mea faigaluega mo Glass Drilling thickness≤20mm
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Microjet leisa meafaigaluega masini wafer tipi SiC meafaitino gaosi
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Silicon carbide taimane uaea tipi masini 4/6/8/12 inisi SiC ingot faagasologa
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Metotia CVD mo le gaosia maualuga mama SiC mea mata'utia i totonu o le ogaumu faʻapipiʻi carbide silicon i le 1600 ℃
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Silicon carbide tete'e ogaumu tioata umi tuputupu 6/8/12 inisi SiC ingot tioata PVT auala.
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Fa'ato'a fa'afa'ato'aga masini fa'ato'aga monocrystalline to'oto'o fa'agaoioiga 6/8/12 inisi luga mafolafola Ra≤0.5μm