Oloa
-
O le Industrial Sapphire Lift Rod ma le Pin, High Hard Al2O3 Sapphire Pin mo le Wafer Handling, Radar System ma le Semiconductor Processing – Diameter 1.6mm i le 2mm
-
Pin Siitia Safaira Fa'apitoa, Vaega Optika Kilisitala Tasi Al2O3 Maualuga le Ma'a'a mo le Fa'aliliuina o Wafer - Lapo'a 1.6mm, 1.8mm, E Mafai ona Fa'apitoa mo Fa'aoga Fa'apisinisi
-
tioata polo safaira vasega opitika Al2O3 mea tau fesiitaiga 0.15-5.5um Dia 1mm 1.5mm
-
polo safaira Dia 1.0 1.1 1.5 mo tioata polo opitika maualuga le maaa o le tioata e tasi
-
safaira dia lanu safaira dia mo le uati, fa'apitoa diameter 40 38mm mafiafia 350um 550um, maualuga manino
-
Wafer InSb 2 inisi 3 inisi e le'i fa'apipi'iina le ituaiga Ntype P fa'atulagaina 111 100 mo Mea e Su'e ai le Infrared
-
Wafer Indium Antimonide (InSb) ituaiga N ituaiga P ituaiga Epi ua sauni e le'i fa'apipi'iina Te doped po'o Ge doped 2 inisi 3 inisi 4 inisi le mafiafia
-
2inisi pusa wafer kaseti wafer e tasi le mea PP po'o le PC Fa'aaogaina i fofo tupe wafer 1inisi 3inisi 4inisi 5inisi 6inisi 12inisi e maua
-
SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C ituaiga 2inch 3inch 4inch 6inch 8inch
-
Paipa KY ma le EFG Sapphire Method O paipa sapphire rods e maualuga le mamafa
-
maa safaira 3 inisi 4 inisi 6 inisi Monocrystal CZ KY metotia Fetuuna'i
-
GaAs epitaxial wafer substrate gallium arsenide wafer power laser wavelength 905nm mo togafitiga faafoma'i laser