Sapphire Ingot Growth Mea

Sapphire Ingot Growth Mequipment Czochralski CZ Metotia mo le gaosia 2inch-12inch Safaira Wafers Ata Fa'aalia

Fa'amatalaga Puupuu:

Sapphire Ingot Growth Equipment (Metotia Czochralski) ose faiga fa'apitoa e fa'atulagaina mo le maualuga-mama, maualalo le fa'aletonu o le safaira tasi-ma'ila tuputupu a'e. O le auala Czochralski (CZ) e mafai ai ona fa'atonu sa'o le saoasaoa o le tosoina o fatu tioata (0.5-5 mm/h), suiga o le fua (5-30 rpm), ma fa'agasologa o le vevela i totonu o se iridium crucible, e maua ai tioata axisymmetric e o'o atu i le 12 inisi (300 mm) le lautele. O nei meafaigaluega e lagolagoina le C/A-vaalele fa'ata'ita'iga tioata, e mafai ai ona fa'atuputeleina le fa'aogaina o mata, fa'aeletoroni-grade, ma safaira doped (fa'ata'ita'iga, Cr³⁺ ruby, Ti³⁺ star sapphire).

O le XKH o loʻo tuʻuina atu fofo faʻaiʻuga, e aofia ai le faʻavasegaina o meafaigaluega (2-12-inisi le gaosiga o le wafer), faʻaogaina o le faʻagasologa (defect density <100/cm²), ma aʻoaʻoga faʻapitoa, faʻatasi ai ma le gaosiga o masina taʻitasi o le 5,000+ wafers mo talosaga e pei o substrates LED, GaN epitaxy, ma semiconductor afifiina.

Auina imeli ia matou

Vaega

Galuega Fa'avae

O le auala CZ e faʻaogaina i laasaga nei:
1. Liusuavai Mea Mata: Al₂O₃ maualuga-mama (mama >99.999%) o loʻo faʻafefeteina i totonu o le iridium crucible i le 2050–2100°C.
2. Seed Crystal Folasaga: E tu'u ifo se tioata fatu i le liusuavai, sosoo ai ma le tosoina vave e fai ai se ua (diamita <1 mm) e aveese ai le ma'i.
3. Fausia Tau'au ma Fa'ateleina Fa'atuputeleina: O le saoasaoa o le tosoina ua fa'aitiitia i le 0.2-1 mm/h, fa'asolosolo malie le fa'alauteleina o le lautele tioata i le fua fa'atatau (fa'ata'ita'iga, 4-12 inisi).
4. Fa'amauina ma Fa'alili: O lo'o fa'alili le tioata ile 0.1-0.5°C/min e fa'aiti'itia ai le ta'e fa'aoso fa'amamafa.
5. Ituaiga tioata talafeagai:
Vasega Fa'aeletonika: Su'ega Semiconductor (TTV <5 μm)
Vasega Mata: UV leisa fa'amalama (transmittance>90%@200 nm)
Fua'iga Fa'apipi'i: Ruby (Cr³⁺ concentration 0.01–0.5 wt.%), paipa safaira lanumoana

Vaega Autu System

1. Fa'aliusuavai faiga
Iridium Crucible: Tetee i le 2300°C, e mafai ona pala, fetaui ma liusuavai tetele (100–400 kg).
Ogaumu Fa'avevela: Fa'atonu le vevela tuto'atasi sone tele (± 0.5°C), fa'amalieina fa'alelei vevela.

2. Tosoina ma le Taamilomilo System
Maualuluga-Sa'o Servo Motor: Toso iugafono 0.01 mm/h, fa'asolo fa'atotonuga <0.01 mm.
Fa'amaufa'ailoga Sua maneta: Fa'asalalauga e le fa'afeso'ota'i mo le fa'aauau pea o le tuputupu a'e (>72 itula).

3. Faiga Fa'atonu Fa'avela
PID Closed-Loop Control: Fa'atonu taimi moni (50-200 kW) e fa'amautu ai le vevela.
Puipuiga Inert Gas: Ar / N₂ faʻafefiloi (99.999% mama) e puipuia ai le faʻamaʻiina.

4. Otometi ma Mata'ituina
Mata'itūina o le CCD: Fa'amatalaga moni (sa'o ± 0.01 mm).
Infrared Thermography: Mataʻituina le faʻaogaina o fesoʻotaʻiga faʻapitoa-vai.

CZ vs. KY Metotia Fa'atusatusa

Parameter	CZ auala	Metotia KY
Max. Tele tioata	12 inisi (300 mm)	400 mm (pea-pea omea)
Fa'aletonu le Density	<100/cm²	<50/cm²
Fua o le Tuputupu ae	0.5–5 mm/h	0.1–2 mm/h
Fa'aaogāga Malosi'i	50–80 kWh/kg	80–120 kWh/kg
Talosaga	Su'ega o le LED, GaN epitaxy	Fa'amalama mata'utia, ingots tetele
tau	Fa'atauva'a (maualuga mea fa'afaigaluega)	Maualuluga (faiga lavelave)

Talosaga Autu

1. Alamanuia Semiconductor
GaN Epitaxial Substrates: 2–8-inisi wafers (TTV <10 μm) mo Micro-LEDs ma laser diodes.
SOI Wafers: Talatala o luga <0.2 nm mo tupe meataalo 3D.

2. Optoelectronics
UV Laser Pupuni: Talitonu 200 W/cm² malosi malosi mo lithography optics.
Vaega Infrared: Fa'ai'uga fa'a'ai <10⁻³ cm⁻¹ mo ata fa'aavela.

3. Consumer Electronics
Ufiufi meapueata atamai: Mohs maaa 9, 10x fa'aleleia atili o le sasa.
Fa'aaliga Smartwatch: Mafiafia 0.3–0.5 mm, felauaiga >92%.

4. Puipuiga ma Aerospace
Pupuni Nuclear Reactor: Fa'apalepale fa'avevela e o'o atu i le 10¹⁶ n/cm².
Fa'ata Leisa Malosi Maualuluga: Su'ega vevela <λ/20@1064 nm.

Au'aunaga a le XKH

1. Meafaigaluega Customization
Fuafuaga Fuafuaga Maua: Φ200–400 mm fetuutuunaiga mo le 2–12-inisi le gaosiga o fafie.
Fetuuna'i Doping: Lagolagoina sese-earth (Er/Yb) ma le suiga-metal (Ti/Cr) doping mo mea fa'apitoa optoelectronic.

2. Lagolago I'uga-i-I'u
Fa'atonuga Fa'agasologa: Fua fa'amaonia muamua (50+) mo LED, masini RF, ma vaega fa'ama'a'a.
Global Service Network: 24/7 suʻesuʻega mamao ma le tausiga i luga ole laiga ma le 24-masina saisai.

3. Fa'agasolo i lalo
Faiga Wafer: Tasi, olo, ma polesi mo 2–12-inisi sifi (C/A-vaalele).
Oloa ua Fa'aopoopoina Tau:
Vaega Matagofie: UV/IR faamalama (0.5–50 mm mafiafia).
Mea Fa'aigoa-Mata'u: Cr³⁺ ruby (GIA-certified), Ti³⁺ star safaira.

4. Ta'ita'i Fa'apitoa
Tusi Faamaonia: Wafers e tausisia EMI.
Pateni: Pateni autu ile faiga fou ole CZ.

Fa'ai'uga

Ole meafaigaluega ole CZ e tu'uina atu ai le tele-dimention fegalegaleai, ultra-maualalo tulaga faaletonu, ma le maualuga o le faagasologa mautu, ma avea ma alamanuia benchmark mo LED, semiconductor, ma talosaga puipuiga. XKH e tuʻuina atu le lagolago atoatoa mai le faʻapipiʻiina o meafaigaluega i le faʻagasologa o le tuputupu aʻe, e mafai ai e tagata faʻatau ona ausia le taugofie, maualuga le gaosiga o le tioata safaira.