SiC Ingot ituaiga 4H Dia 4 inisi 6 inisi Mafiafia 5-10mm Vasega Suesuega / Dummy

Fa'amatalaga Pupuu:

Ua tula'i mai le Silicon Carbide (SiC) o se mea taua i fa'aoga fa'aeletoronika ma optoelectronic fa'aonaponei ona o ona uiga eletise, vevela, ma fa'amekanika sili ona lelei. O le 4H-SiC Ingot, e maua i le lautele o le 4-inisi ma le 6-inisi ma le mafiafia o le 5-10 mm, o se oloa fa'avae mo su'esu'ega ma atina'e po'o se mea e fai ma fa'ata'ita'iga. O lenei ingot ua mamanuina e tu'uina atu ai i tagata su'esu'e ma gaosi oloa ni mea SiC maualuga lelei e talafeagai mo le fa'atulagaina o masini fa'ata'ita'i, su'esu'ega fa'ata'ita'i, po'o fa'agasologa o le fa'atulagaina ma le su'ega. Faatasi ai ma lona fausaga tulaga ese o le hexagonal crystal, o le 4H-SiC ingot e ofoina atu le lautele o le fa'aogaina i eletise eletise, masini maualuga-frequency, ma faiga e tete'e atu i le radiation.


Fa'aaliga

Meatotino

1. Fausaga ma le Fa'asinomaga o le Kilisitala
Polytype: 4H (fauga hexagonal)
Fa'amautu o le Lattice:
a = 3.073 Å
c = 10.053 Å
Fa'asinomaga: E masani lava [0001] (C-plane), ae o isi fa'asinomaga e pei o le [11\overline{2}0] (A-plane) e maua fo'i pe a talosagaina.

2. Fua Fa'aletino
Lapoa:
Filifiliga masani: 4 inisi (100 mm) ma le 6 inisi (150 mm)
Mafiafia:
E maua i le lautele e 5-10 mm, e mafai ona fetu'una'i e fa'atatau i mana'oga o le fa'aoga.

3. Meatotino Eletise
Ituaiga Fa'aopoopo: E maua i le intrinsic (semi-insulating), n-type (fa'aopoopo i le nitrogen), po'o le p-type (fa'aopoopo i le alumini po'o le boron).

4. Meatotino Fa'avevela ma Fa'amekanika
Fa'avevela: 3.5-4.9 W/cm·K i le vevela o le potu, e mafai ai ona fa'asa'oloto lelei le vevela.
Ma'a'a: O le fua fa'atatau a le Mohs e 9, ma avea ai le SiC ma lona lua i le ma'a'a o le taimane.

Fa'atulagaga

Fa'amatalaga auiliili

Iunite

Metotia o le Tuputupu Aʻe PVT (Felauaiga Fa'aletino o le Ausa)  
Lapoa 50.8 ± 0.5 / 76.2 ± 0.5 / 100.0 ± 0.5 / 150 ± 0.5 mm
Polytype 4H / 6H (50.8 mm), 4H (76.2 mm, 100.0 mm, 150 mm)  
Fa'atulagaga o le fogaeleele 0.0˚ / 4.0˚ / 8.0˚ ± 0.5˚ (50.8 mm), 4.0˚ ± 0.5˚ (isi) tikeri
Ituaiga Ituaiga-N  
Mafiafia 5-10 / 10-15 / >15 mm
Fa'asinomaga Laulau Muamua (10-10) ± 5.0˚ tikeri
Umi Mafolafola Autū 15.9 ± 2.0 (50.8 mm), 22.0 ± 3.5 (76.2 mm), 32.5 ± 2.0 (100.0 mm), 47.5 ± 2.5 (150 mm) mm
Fa'asinomaga Mafolafola Lona Lua 90˚ CCW mai le fa'asinomaga ± 5.0˚ tikeri
Umi Mafolafola Lona Lua 8.0 ± 2.0 (50.8 mm), 11.2 ± 2.0 (76.2 mm), 18.0 ± 2.0 (100.0 mm), Leai (150 mm) mm
Vasega Su'esu'ega / Fa'ata'ita'iga  

Talosaga

1. Suesuega ma Atina'e

O le ingot 4H-SiC vasega suʻesuʻe e fetaui lelei mo fale suʻesuʻe faʻaleaʻoaʻoga ma fale gaosi oloa e taulaʻi i le atinaʻeina o masini faʻavae i le SiC. O lona tulaga sili ona lelei o le crystalline e mafai ai ona faʻataʻitaʻi saʻo i meatotino SiC, e pei o:
Su'esu'ega o le fe'avea'i o avefe'au.
Auala e fa'ailoa ai mea sese ma fa'aitiitia ai.
Fa'aleleia atili o fa'agasologa o le tuputupu a'e epitaxial.

2. Mea Fa'afoliga Fa'alilolilo
O le ingot dummy-grade e faʻaaogaina lautele i suʻega, faʻatulagaina, ma faʻataʻitaʻiga. O se isi auala taugofie mo:
Fa'atulagaina o fa'asologa o le fa'agasologa i le Chemical Vapor Deposition (CVD) po'o le Physical Vapor Deposition (PVD).
Iloiloina o faagasologa o le vaneina ma le fa'apulusina i siosiomaga o gaosiga.

3. Eletise Malosiaga
Ona o lona lautele o le bandgap ma le maualuga o le thermal conductivity, o le 4H-SiC o se maa tulimanu mo le eletise eletise, e pei o:
MOSFET maualuga-voltage.
Schottky Barrier Diodes (SBDs).
Feso'ota'iga o Aafiaga Fa'a-Fanua (JFETs).
O faʻaoga e aofia ai inverters o taʻavale eletise, inverters o le la, ma smart grids.

4. Masini Fa'atele-Maualuga
O le maualuga o le eletise e gaoioi ai le meafaitino ma le maualalo o le capacitance loss e talafeagai ai mo:
Transistor o le Fa'asalalauina o Ala Leitio (RF).
Faiga feso'ota'iga uaealesi, e aofia ai le atina'e o le 5G.
Talosaga mo le ea ma le puipuiga e manaʻomia ai faiga o le radar.

5. Faiga e Tetee Atu i le Aveeseina o Faasalalauga
O le tete'e masani a le 4H-SiC i fa'aleagaina o le radiation e taua tele ai i siosiomaga faigata e pei o:
Meafaigaluega mo suʻesuʻega o le vateatea.
Meafaigaluega e mata'ituina ai le falegaosimea o le malosiaga faaniukilia.
Mea fa'aeletoronika tulaga fa'amiliteli.

6. Tekonolosi Fou
A o faʻagasolo le alualu i luma o le tekinolosi SiC, o loʻo faʻaauau pea ona faʻatupulaia ana faʻaoga i matāʻupu e pei o:
Suʻesuʻega o le Photonics ma le quantum computing.
Atina'eina o LED malolosi ma masini fa'alogo UV.
Tuufaatasia i totonu o fausaga eseese o semiconductor lautele-bandgap.
Fa'amanuiaga o le 4H-SiC Ingot
Mama Maualuga: Gaosia i lalo o tulaga faigata e fa'aitiitia ai mea leaga ma le mafiafia o mea sese.
Fa'alauteleina: E maua i le lautele e 4-inisi ma le 6-inisi e lagolago ai mana'oga fa'a-alamanuia ma mana'oga o su'esu'ega.
Fetuuna'i: Fetuuna'i i ituaiga eseese o le fa'aaogaina o vaila'au fa'aopoopo ma fa'atulagaga e fa'afetaui ai mana'oga fa'apitoa.
Fa'atinoga Malosi: Tulaga mautu sili ona lelei i le vevela ma le fa'ainisinia i lalo o tulaga fa'agaoioia sili ona faigata.

Faaiuga

O le 4H-SiC ingot, faatasi ai ma ona meatotino tulaga ese ma le lautele o ona faʻaoga, o loʻo tu i le pito i luma o le faʻafouga o meafaitino mo le isi tupulaga o mea eletise ma optoelectronics. Pe faʻaaogaina mo suʻesuʻega faʻaleaʻoaʻoga, faʻataʻitaʻiga faʻapisinisi, poʻo le gaosiga o masini faʻapitoa, o nei ingot e maua ai se faʻavae faʻatuatuaina mo le tuleia o tapulaʻa o tekinolosi. Faatasi ai ma fua faʻatatau, faʻaopoopoga, ma faʻatulagaga, o le 4H-SiC ingot ua faʻatulagaina e faʻafetaui ai manaʻoga faʻatupulaʻia o le alamanuia semiconductor.
Afai e te fia iloa atili pe tu'u se oka, fa'amolemole lagona le saoloto e fa'afeso'ota'i mai mo ni fa'amatalaga auiliili ma feutanaiga fa'apitoa.

Ata Auiliili

SiC Ingot11
SiC Ingot15
SiC Ingot12
SiC Ingot14

  • Muamua:
  • Sosoo ai:

  • Tusi lau savali iinei ma lafo mai ia i matou