SiC Ingot 4H ituaiga Dia 4inch 6inch Mafiafia 5-10mm Su'esu'ega / Dummy Vasega

Fa'amatalaga Puupuu:

Silicon Carbide (SiC) ua aliaʻe mai o se mea taua i faʻaoga eletise ma optoelectronic ona o lona maualuga eletise, vevela, ma mea faʻainisinia. O le 4H-SiC Ingot, o loʻo maua i le lautele o le 4-inisi ma le 6-inisi ma le mafiafia o le 5-10 mm, o se oloa faʻavae mo suʻesuʻega ma atinaʻe faʻamoemoega poʻo se mea faʻataʻavalevale-grade. O lenei ingot ua mamanuina e tuʻuina atu ai i tagata suʻesuʻe ma tagata gaosi oloa maualuga SiC substrates talafeagai mo faʻataʻitaʻiga masini faʻataʻitaʻiga, suʻesuʻega faʻataʻitaʻiga, poʻo le faʻavasegaina ma faʻataʻitaʻiga faiga. Faatasi ai ma lona fausaga tioata hexagonal tulaga ese, o le 4H-SiC ingot e ofoina atu le tele o le faʻaogaina i le eletise eletise, masini maualuga, ma faiga faʻamalosi.

Auina imeli ia matou

Fa'amatalaga Oloa

Faailoga o oloa

Meatotino

1. Fa'atulagaga tioata ma Fa'atonuga
Polytype: 4H (fauga fa'afaono)
Lattice tumau:
a = 3.073 Å
c = 10.053 Å
Fa'asinomaga: E masani lava [0001] (C-vaalele), ae o isi fa'atonuga e pei o le [11\overline{2}0] (A-vaalele) e avanoa fo'i pe a talosagaina.

2. Fua Faaletino
lapoa:
Filifiliga masani: 4 inisi (100 mm) ma le 6 inisi (150 mm)
Mafiafia:
E maua i le va o le 5-10 mm, faʻapitoa e faʻatatau i manaʻoga o talosaga.

3. Eletise Meatotino
Ituaiga Doping: E maua i totonu (semi-insulating), n-type (doped with nitrogen), poʻo p-type (doped with aluminum or boron).

4. Meatotino vevela ma masini
Fa'avevela vevela: 3.5-4.9 W/cm·K i le vevela o le potu, e mafai ai ona fa'amalo lelei le vevela.
Ma'a'a: Mohs fua 9, fa'alua le SiC na'o taimane ile ma'a'a.

Parameter	Fa'amatalaga	Vaega
Metotia Tuputupu	PVT (Va'aiga Ausa Faaletino)
Diamita	50.8 ± 0.5 / 76.2 ± 0.5 / 100.0 ± 0.5 / 150 ± 0.5	mm
Polytype	4H / 6H (50.8 mm), 4H (76.2 mm, 100.0 mm, 150 mm)
Fa'asagaga i luga	0.0˚ / 4.0˚ / 8.0˚ ± 0.5˚ (50.8 mm), 4.0˚ ± 0.5˚ (isi)	tikeri
Ituaiga	N-ituaiga
mafiafia	5-10 / 10-15 / >15	mm
Primary Flat Orientation	(10-10) ± 5.0˚	tikeri
Primary Flat Umi	15.9 ± 2.0 (50.8 mm), 22.0 ± 3.5 (76.2 mm), 32.5 ± 2.0 (100.0 mm), 47.5 ± 2.5 (150 mm)	mm
Tulaga Lua mafolafola	90˚ CCW mai fa'atonuga ± 5.0˚	tikeri
Lua Mafolafola Umi	8.0 ± 2.0 (50.8 mm), 11.2 ± 2.0 (76.2 mm), 18.0 ± 2.0 (100.0 mm), Leai (150 mm)	mm
Vasega	Su'esu'ega / Dummy

Talosaga

1. Suesuega ma Atina'e

O le suʻesuʻega-grade 4H-SiC ingot e lelei mo aʻoaʻoga ma fale gaosi oloa e taulaʻi i le atinaʻeina o masini faʻavae SiC. O lona tulaga maualuga tioata e mafai ai ona faʻataʻitaʻi saʻo i luga o meatotino SiC, e pei o:
Su'esu'ega fe'avea'i.
Fa'ailoga fa'aletonu ma faiga fa'aitiitiga.
Fa'atonuina o fa'agasologa o le tuputupu a'e epitaxial.

2. Fa'alifu Fa'ata
O le dummy-grade ingot e faʻaaogaina lautele i suʻega, faʻavasegaina, ma faʻataʻitaʻiga talosaga. O se fa'aoga taugofie mo:
Fa'asologa o le fa'avasegaina o le ausa i Vailaau Mata'utia (CVD) po'o le Fua Fa'aletino (PVD).
Iloiloina o faiga etching ma polesi i siosiomaga gaosiga.

3. Malosiaga Fa'aeletonika
Ona o le lautele o le fusi ma le maualuga o le vevela, 4H-SiC o se maatulimanu mo eletise eletise, e pei o:
MOSFET maualuga-volt.
Schottky Barrier Diodes (SBDs).
Junction Field-Affect Transistors (JFETs).
O talosaga e aofia ai fa'aliliuga ta'avale eletise, fa'aliliuina o le la, ma feso'ota'iga atamai.

4. Masini Maualuluga
O le maualuga o le eletise eletise ma le maualalo o le gau e mafai ai ona talafeagai mo:
Transistors ole Auala Leitio (RF).
Faiga feso'ota'iga uaealesi, e aofia ai atina'e 5G.
Aerospace ma fa'aoga puipuiga e mana'omia ai faiga fa'ata.

5. Faiga e Tetee i le Radiation
4H-SiC's tete'e fa'apitoa i fa'aleagaina fa'avevela e matua taua ai i si'osi'omaga faigata e pei o:
Mea faigaluega su'esu'e avanoa.
Meafaigaluega e mataituina ai fale eletise faaniukilia.
Fa'aeletonika fa'amiliteli.

6. Fa'atekonolosi Fa'afou
Aʻo faʻalauteleina le tekonolosi SiC, o loʻo faʻaauau pea ona faʻatupulaia ana talosaga i fanua e pei o:
Photonics ma su'esu'ega fa'akomepiuta quantum.
Atinaʻeina o faʻamalama maualuga ma vaʻaia UV.
Tu'ufa'atasiga i totonu o le lautele-bandgap semiconductor heterostructures.
Tulaga lelei o le 4H-SiC Ingot
Mamalu Maualuga: Gaosi i lalo o tulaga faʻamalo e faʻaitiitia ai le mama ma le tele o faaletonu.
Scalability: E maua uma i le 4-inisi ma le 6-inisi le lautele e lagolago ai alamanuia-tulaga ma suʻesuʻega-fua manaʻoga.
Versatility: Fetuuna'i i ituaiga doping eseese ma orientations e ausia manaoga faapitoa talosaga.
Malosiaga Fa'atinoga: Sili atu le vevela ma le fa'ainisinia mautu i lalo o tulaga ogaoga fa'aoga.

Fa'ai'uga

O le 4H-SiC ingot, faʻatasi ai ma ona meatotino faʻapitoa ma faʻaoga lautele, o loʻo tu i luma o mea fou fou mo le isi augatupulaga eletise ma optoelectronics. Pe faʻaaogaina mo suʻesuʻega faʻale-aʻoaʻoga, faʻataʻitaʻiga faʻapisinisi, poʻo le gaosiga o masini faʻapitoa, o nei mea e maua ai se faʻavae faʻalagolago mo le tuleia o tuaoi o tekinolosi. Faatasi ai ma fua faʻapitoa, doping, ma faʻasalalauga, o le 4H-SiC ingot ua faʻatulagaina e faʻafetaui ai manaoga faʻaleleia o le semiconductor industry.
Afai e te manaʻo e aʻoaʻo atili pe tuʻuina se oka, faʻamolemole lagona le saoloto e aapa atu mo faʻamatalaga auiliili ma faʻatalanoaga faʻapitoa.