SiC substrate P ma D vasega Dia50mm 4H-N 2inch
O uiga autu o 2inch SiC mosfet wafers e fa'apea;.
High Thermal Conductivity: Faʻamautinoa lelei le pulea lelei o le vevela, faʻaleleia le faʻatuatuaina o masini ma le faʻatinoga
High Electron Mobility: Faʻatagaina le televave o fesoʻotaʻiga eletise, talafeagai mo faʻaoga maualuga
Mauaina o vaila'au: Fa'atumauina le fa'atinoga i lalo o tulaga ogaoga le ola ole masini
Fesoʻotaʻiga: Faʻatasi ma le tuʻufaʻatasia o le semiconductor o loʻo iai ma le gaosiga tele
2inch, 3inch, 4inch, 6inch, 8inch SiC mosfet wafers o loʻo faʻaaogaina lautele i vaega nei: eletise eletise mo taʻavale eletise, tuʻuina atu faʻamautu ma lelei faiga faʻaletino, faʻafefeteina fili faʻafouina malosiaga faʻafouina, faʻaleleia le puleaina o le malosi ma le faʻaleleia lelei,
SiC wafer ma Epi-layer wafer mo satelite ma aerospace eletise, faʻamautinoa le faʻatuatuaina o fesoʻotaʻiga maualuga.
Optoelectronic talosaga mo lasers maualuga-faatinoga ma LEDs, faʻafeiloaʻi manaʻoga o moli faʻalauiloa ma faʻaaliga tekonolosi.
O matou SiC wafers SiC substrates o le filifiliga sili lea mo eletise eletise ma masini RF, aemaise lava pe a manaʻomia le maualuga o le faʻatuatuaina ma le faʻatinoina o galuega. O vaega ta'itasi o wafers e fa'ata'ita'iina fa'amalosi ina ia mautinoa latou te ausia tulaga maualuga.
O matou 2inch, 3inch, 4inch, 6inch, 8inch 4H-N type D-grade ma P-grade SiC wafers o le filifiliga sili lea mo talosaga semiconductor maualuga. Faatasi ai ma le tulaga ese tioata, pulea lelei atoatoa, auaunaga faʻapitoa, ma le tele o faʻaoga, e mafai foi ona matou faʻatulagaina aganuʻu e tusa ai ma ou manaʻoga. E talia su'esu'ega!