SiC
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6 inisi Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade
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SiC Ingot ituaiga 4H Dia 4 inisi 6 inisi Mafiafia 5-10mm Vasega Suesuega / Dummy
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Sic Substrate Silicon Carbide Wafer 4H-N Ituaiga Maualuga le Ma'a'a ma le Tete'e i le Pala Prime Grade Polishing
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2inisi Silicon Carbide Wafer 6H-N Ituaiga Prime Grade Research Grade Dummy Grade 330μm 430μm Mafiafia
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2inisi le silicon carbide substrate 6H-N itu lua ua fa'apupula lautele 50.8mm le vasega gaosiga o su'esu'ega
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N-Type SiC Composite Substrates Dia6inch Monocrystaline maualuga le tulaga ma le substrate maualalo le tulaga
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Fa'apipi'i SiC Fa'aputuga Fa'aputuga Dia2 inisi 4 inisi 6 inisi 8 inisi HPSI
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SiC Ituaiga-N i luga o le Si Composite Substrates Dia6inch
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SiC substrate Dia200mm 4H-N ma le HPSI Silicon carbide
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3inisi SiC substrate Production Dia76.2mm 4H-N
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SiC substrate P ma le D grade Dia50mm 4H-N 2 inisi
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SiC Ingot 4H-N ituaiga Dummy vasega 2inisi 3inisi 4inisi 6inisi le mafiafia:＞10mm