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SICOI (Silicon Carbide on Insulator) Wafers SiC Film ON Silicon

SICOI (Silicon Carbide on Insulator) Wafers SiC Film ON Silicon Featured Image
  • SICOI (Silicon Carbide on Insulator) Wafers SiC Film ON Silicon
  • SICOI (Silicon Carbide on Insulator) Wafers SiC Film ON Silicon
  • SICOI (Silicon Carbide on Insulator) Wafers SiC Film ON Silicon

Fa'amatalaga Puupuu:

Silicon Carbide on Insulator (SICOI) wafers o isi fa'atupuga semiconductor substrates e tu'ufa'atasia le maualuga o mea fa'aletino ma mea fa'aeletoroni o le silicon carbide (SiC) fa'atasi ai ma uiga tu'ueseese fa'aeletise fa'apitoa o se fa'apala puipui puipui, e pei o le silicon dioxide (SiO₂) po'o le silicon nitride (Si₃N₄). O le SICOI wafer masani e aofia ai se mea manifinifi epitaxial SiC layer, o se ata fa'agata vaeluaga, ma se mea fa'avae lagolago, lea e mafai ona avea ma silicon po'o SiC.


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Auiliili Ata

SICOI 11_副本
SICOI 14_副本2

Fa'ailoaina ole Silicon Carbide on Insulator (SICOI) wafers

Silicon Carbide on Insulator (SICOI) wafers o isi fa'atupuga semiconductor substrates e tu'ufa'atasia le maualuga o mea fa'aletino ma mea fa'aeletoroni o le silicon carbide (SiC) fa'atasi ai ma uiga tu'ueseese fa'aeletise fa'apitoa o se fa'apala puipui puipui, e pei o le silicon dioxide (SiO₂) po'o le silicon nitride (Si₃N₄). O le SICOI wafer masani e aofia ai se mea manifinifi epitaxial SiC layer, o se ata fa'agata vaeluaga, ma se mea fa'avae lagolago, lea e mafai ona avea ma silicon po'o SiC.

O lenei fausaga faʻapipiʻi ua faʻainisinia e faʻafetaui ai manaʻoga faʻamalosi o masini eletise maualuga, maualuga, ma maualuga-vevela. E ala i le tuʻufaʻatasia o se mea faʻapipiʻi, SICOI wafers e faʻaitiitia ai le malosi o le parasitic ma taofiofia le tafe, ma faʻamautinoa ai le maualuga o laina faʻaogaina, sili atu le lelei, ma faʻaleleia le puleaina o le vevela. O nei faʻamanuiaga e faʻasilisiliina ai i latou i vaega e pei o taʻavale eletise, 5G fesoʻotaʻiga fesoʻotaʻiga, faʻaogaina o le ea, faʻaeletonika RF faʻavavevave, ma tekinolosi faʻalogo MEMS.

Gaosiga Fa'avae ole SICOI Wafers

SICOI (Silicon Carbide on Insulator) wafers e gaosia e ala i se tulaga maualugafa'apipi'i ma fa'amama fa'amama:

  1. SiC Substrate Tuputupu ae– Ua saunia se fa'ama'i fa'ama'i e tasi-ma'ai SiC (4H/6H) e fai ma mea foa'i.

  2. Fa'anofoina Laega Fa'amama- O se ata faʻafefete (SiO₂ poʻo Si₃N₄) o loʻo faia i luga o le vaʻavaʻa (Si poʻo SiC).

  3. Fa'amauga o le Wafer- O le SiC wafer ma le carrier wafer e faʻapipiʻi faʻatasi i lalo o le maualuga o le vevela poʻo le fesoasoani plasma.

  4. Manifinifi & Faila– O le SiC donor wafer e fa'amama i lalo i ni nai micrometers ma fa'aiila ina ia maua ai se mea lamolemole atomika.

  5. Su'ega Mulimuli- O le SICOI wafer ua maeʻa e faʻataʻitaʻiina mo le mafiafia o le mafiafia, le gaogao o luga, ma le faʻaogaina o le faʻaogaina.

E ala i lenei faagasologa, avaega manifinifi SiC galuefaʻatasi ai ma mea faʻapitoa eletise ma vevela e tuʻufaʻatasia ma se ata faʻamalama ma se mea lagolago lagolago, fatuina o se tulaga maualuga-faʻatinoga mo le isi augatupulaga mana ma masini RF.

SiCOI

Tulaga Autu ole SICOI Wafers

Vaega Fa'apitoa Uiga Fa'apitoa Manuia Autu
Fa'afaigaluega 4H/6H-SiC vaega galue + ata tifaga insulating (SiO₂/Si₃N₄) + Si poʻo SiC feaveaʻi Ausia malosi faʻaesea eletise, faʻaitiitia faʻalavelave faʻalavelave
Eletise Meatotino Malosiga malepe maualuga (> 3 MV/cm), gau dielectric maualalo Fa'atonuina mo le maualuga-voltage ma le fa'agaioia maualuga
Meatotino vevela Fa'avevela vevela e o'o atu ile 4.9 W/cm·K, mautū i luga ole 500°C Fa'amama lelei le vevela, fa'atinoina lelei i lalo ole mamafa mamafa
Meatotino Fa'ainisinia Ma'a'a tele (Mohs 9.5), maualalo fa'atasi o le fa'alauteleina o le vevela Malosi e tetee atu i le atuatuvale, faʻaleleia le umi o le masini
Tulaga lelei Lau'ele'ele sili ona lamolemole (Ra <0.2 nm) Fa'alauiloa le epitaxy e leai se fa'aletonu ma le fa'aogaina o masini fa'alagolago
Insulation Resistivity >10¹⁴ Ω·cm, maualalo le leaka o le taimi nei Fa'atuatuaina fa'agaioiga i le RF ma le maualuga-voltage tu'ufua talosaga
Tele & Fa'asinomaga E maua i le 4, 6, ma le 8-inisi formats; SiC mafiafia 1–100 μm; fa'amama 0.1-10 μm Fuafuaga fetuutuunai mo manaoga eseese talosaga

 

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Vaega Autu Talosaga

Vaega o Talosaga Tulaga Fa'aoga masani Fa'amanuiaga Fa'atinoga
Malosiaga Faaeletonika EV inverters, nofoaga fa'atumu, masini eletise fale gaosimea High gau gau, faʻaitiitia le gau o suiga
RF & 5G Fa'aola eletise fa'avae, vaega ole galu milimita Parasi maualalo maualalo, lagolago GHz-tele gaioiga
MEMS Sensors Si'osi'omaga malosi fa'aoso fa'aoso, fa'ata'ita'iga-grade MEMS Maualuluga o le vevela, e tetee atu i le vevela
Aerospace & Puipuiga Feso'ota'iga satelite, fa'aoga eletise eletise Fa'atuatuaina i le vevela tele ma le fa'aalia o le radiation
Smart Grid HVDC converters, va'ava'a fa'amalo malo O le fa'agata maualuga e fa'aitiitia ai le paoa
Optoelectronics UV LEDs, mea'ai laser O le tulaga maualuga o le tioata e lagolagoina ai le faʻamalama lelei

Fausiaina o le 4H-SiCOI

O le gaosiga o 4H-SiCOI wafers e ausia e ala ifa'apipi'i ma fa'auifi faiga, e mafai ai ona maualuga le lelei o feso'ota'iga fa'alava ma fa'aletonu SiC e leai ni fa'aletonu.

  • a: Fa'ata'ita'iga o le 4H-SiCOI meafaitino faufale faufale.

  • b: Ata o le 4-inisi 4H-SiCOI wafer e faʻaaoga ai le faʻapipiʻiina ma le manifinifi; sone faaletonu ua faailogaina.

  • c: Mafiafia uniformity characterization o le substrate 4H-SiCOI.

  • d: Ata fa'apitoa o se mate 4H-SiCOI.

  • e: Fa'agasologa fa'agasologa mo le fausiaina o se SiC microdisk resonator.

  • f: SEM o se microdisk resonator ua maeʻa.

  • g: Faʻateleina SEM faʻaalia le puipui pito i tua; Fa'asinomaga AFM o lo'o fa'aalia ai le fa'alelei o luga ole nanoscale.

  • h: Fa'asagaga SEM fa'ata'ita'i fa'aparabolic luga pito i luga.

FAQ ile SICOI Wafers

Q1: O a ni fa'amanuiaga a le SICOI wafers nai lo SiC wafers masani?
A1: E le pei o mea masani SiC substrates, SICOI wafers e aofia ai se mea faʻapipiʻi e faʻaitiitia ai le malosi o le parasitic ma le leakage, e oʻo atu ai i le maualuga maualuga, sili atu le tali atu, ma le maualuga o le faʻaogaina o le vevela.

Q2: O le a le tele o le wafer e masani ona maua?
A2: SICOI wafers e masani ona gaosia i le 4-inisi, 6-inisi, ma le 8-inisi, faʻatasi ai ma le SiC faʻapitoa ma le mafiafia o le insulating e avanoa e faʻatatau i manaʻoga o masini.

Q3: O fea pisinisi e sili ona aoga mai SICOI wafers?
A3: Alamanuia autu e aofia ai le eletise eletise mo taavale eletise, RF eletise mo fesoʻotaʻiga 5G, MEMS mo masini eletise, ma optoelectronics e pei ole UV LEDs.

Q4: E faʻafefea ona faʻaleleia e le vaega faʻapipiʻi le faʻatinoga o masini?
A4: O le ata faʻamalama (SiO₂ poʻo Si₃N₄) e puipuia ai le tafe o loʻo iai nei ma faʻaitiitia ai le faʻaogaina o le eletise, faʻamalosia le maualuga o le malosi o le voltage, sili atu le lelei o suiga, ma faʻaitiitia le vevela.

Q5: E fetaui lelei le SICOI wafers mo talosaga maualuga-vevela?
A5: Ioe, faʻatasi ai ma le maualuga o le vevela ma le teteʻe i tua atu o le 500 ° C, SICOI wafers ua mamanuina e galue faʻalagolago i lalo o le vevela vevela ma i totonu o siosiomaga faigata.

Q6: E mafai ona faʻapipiʻiina le SICOI wafers?
A6: E matua'i. O lo'o ofoina atu e le au gaosi ni mamanu fa'apitoa mo mafiafia fa'apitoa, tulaga o le doping, ma tu'ufa'atasiga e fa'afetaui ai su'esu'ega eseese ma mana'oga tau alamanuia.

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