SiCOI wafer 4inch 6inch HPSI SiC SiO2 Si subatrate fausaga

Fa'amatalaga Puupuu:

O lenei pepa o loʻo tuʻuina atu ai se faʻamatalaga auʻiliʻili o le Silicon Carbide-on-Insulator (SiCOI) wafers, faʻapitoa e taulaʻi i luga ole 4-inisi ma 6-inisi substrates e faʻaalia ai le mama maualuga semi-insulating (HPSI) lapisi silicon carbide (SiC) faʻapipiʻi i luga o le silicon dioxide (SiO₂) insulating substrates. O le fausaga o le SiCOI e tuʻufaʻatasia ai mea faʻapitoa eletise, vevela, ma faʻainisinia o le SiC faʻatasi ai ma le faʻaogaina o le eletise eletise o le oxide layer ma le lagolago faʻainisinia o le silicon substrate. O le faʻaaogaina o le HPSI SiC e faʻaleleia ai le faʻaogaina o masini e ala i le faʻaitiitia o le faʻaogaina o substrate ma faʻaitiitia ai le gau o le parasitic, ma faʻaogaina ai nei faʻamaʻi lelei mo faʻaoga eletise maualuga, maualuga, ma le maualuga o le vevela. O loʻo faʻatalanoaina le faʻagasologa o le gaosiga, uiga faʻapitoa, ma le faʻaogaina o lenei faʻatulagaga multilayer, faʻamamafa lona taua i le isi augatupulaga eletise eletise ma microelectromechanical system (MEMS). O le suʻesuʻega e faʻatusatusa ai foʻi meatotino ma faʻaoga talafeagai o 4-inisi ma 6-inisi SiCOI wafers, faʻamaonia le faʻalauteleina ma le tuʻufaʻatasia o faʻamoemoega mo masini semiconductor maualuga.

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SiCOI wafer's fausaga

HPB (High-Performance Bonding) BIC (Bonded Integrated Circuit) ma le SOD (Silicon-on-Diamond or Silicon-on-Insulator-like technology). E aofia ai:

Fua Fa'atinoga:

Lisi fa'amaufa'ailoga e pei o le sa'o, ituaiga mea sese (fa'ata'ita'iga, "Leai se mea sese," "Value mamao"), ma fuaina mafiafia (fa'ata'ita'iga, "Vaava-Tusa'o mafiafia/kg").

O se laulau e iai fa'atatau fa'anumera (atonu o fa'ata'ita'iga po'o fa'asologa o faiga) i lalo o ulutala e pei o le "ADDR/SYGBDT," "10/0," ma isi.

Fa'amatalaga Mafiafia Layer:

Le tele o fa'amatalaga toe fai fa'ailoga "L1 mafiafia (A)" i le "L270 mafiafia (A)" (e foliga mai i Ångströms, 1 Å = 0.1 nm).

Fautuaina se fausaga e tele-vaega ma sa'o le mafiafia o le fa'atonutonuina o vaega ta'itasi, e masani i fa'ama'i semiconductor fa'asolosolo.

SiCOI Wafer Structure

SiCOI (Silicon Carbide on Insulator) o se fausaga wafer faʻapitoa e tuʻufaʻatasia ai le silicon carbide (SiC) faʻatasi ai ma se mea faʻapipiʻi, e tutusa ma le SOI (Silicon-on-Insulator) ae sili ona lelei mo talosaga maualuga / maualuga-vevela. O mea taua:

Fa'avasegaga Fa'avae:

Laupapa pito i luga: Sili-crystal Silicon Carbide (SiC) mo le maualuga o le eletise eletise ma le mautu o le vevela.

Insulator Tanu: E masani lava SiO₂ (oxide) poʻo taimane (i le SOD) e faʻaitiitia ai le malosi o le parasitic ma faʻaleleia le vavae ese.

Fa'avae Fa'avae: Silicon po'o le polycrystalline SiC mo le lagolago fa'ainisinia

meatotino a SiCOI wafer

Eletise Meatotino Wide Bandgap (3.2 eV mo le 4H-SiC): Faʻamalosia le maualuga o le gau (> 10x maualuga atu nai lo le silicon).

Feavea'i Electron maualuga:~ 900 cm²/V·s (4H-SiC) vs. ~1,400 cm²/V·s (Si), ae sili atu le fa'atinoga maualuga.

Maualalo i le tetee:SiCOI-fa'avae transistors (fa'ata'ita'iga, MOSFETs) fa'aalia le pa'u maualalo.

Insulation sili ona lelei:O le oxide tanumia (SiO₂) po'o le lapisi taimane e fa'aitiitia ai le malosi o le parasitic ma le crosstalk.

Meatotino vevelaHigh Thermal Conductivity: SiC (~ 490 W / m · K mo 4H-SiC) vs. Si (~ 150 W / m · K) .Diamond (pe a faʻaaogaina e pei o le insulator) e mafai ona sili atu i le 2,000 W / m · K, faʻaleleia le vevela vevela.

Fa'amaumau vevela:Fa'atino fa'atuatuaina i> 300°C (vs. ~ 150°C mo le silicon) Fa'aitiitia mana'oga malulu i le eletise eletise.

3. Meatotino Fa'ainisinia & VailaauMaaa Tele (~ 9.5 Mohs): Tetee i le ofuina, faia le SiCOI umi mo siosiomaga faigata.

Ole malosi ole vaila'au:Tete'e i le fa'ama'i ma le pala, e o'o lava i tulaga oona/alkali.

Fa'alautele le vevela maualalo:E fetaui lelei ma isi mea vevela maualuga (faataitaiga, GaN).

4. Tulaga Lelei (vs. Bulk SiC po'o SOI)

Fa'aitiitiga le gau o le palapala:O le fa'a'ese'ese fa'amama e puipuia ai le lepa o lo'o iai nei i totonu o le mea'ai.

Fa'aleleia RF Fa'atinoga:Ole malosi ole parasitic maualalo e mafai ai ona vave fesuiai (aoga mo masini 5G/mmWave).

Fuafuaga fetuutuunai:O le vaega pito i luga o le SiC manifinifi e mafai ai ona fa'amalieina le fa'avasegaina o masini (fa'ata'ita'iga, auala e sili ona manifinifi i transistors).

Fa'atusatusaga i le SOI & Bulk SiC

Meatotino	SiCOI	SOI (Si/SiO₂/Si)	Tele SiC
Vavega	3.2 eV (SiC)	1.1 eV (Si)	3.2 eV (SiC)
Amioga vevela	Maualuluga (SiC + taimane)	Maulalo (SiO₂ fa'atapulaaina le tafe o le vevela)	Maualuluga (Na'o SiC)
Malolo malepe	Maualuga Maualuga	feololo	Maualuga Maualuga
Tau	Maualuga	Maulalo	Maualuga (SiC mama)

SiCOI wafer's talosaga

Malosiaga Faaeletonika
SiCOI wafers o loʻo faʻaaogaina lautele i masini semiconductor eletise maualuga ma maualuga e pei o MOSFETs, Schottky diodes, ma sui eletise. Ole vaeluaga lautele ma le maualuga male male eletise ole SiC e mafai ai ona lelei le liua o le mana ma faʻaitiitia le gau ma faʻaleleia le faʻaogaina o le vevela.

Leitio Sa'o (RF) Meafaigaluega
O le insulating layer i SiCOI wafers e faʻaitiitia ai le malosi o le parasitic, ma faʻaogaina ai mo transistors maualuga-telefoni ma amplifiers faʻaaogaina i fesoʻotaʻiga, radar, ma tekinolosi 5G.

Microelectromechanical System (MEMS)
SiCOI wafers e maua ai se faʻavae malosi mo le faʻaogaina o masini MEMS ma faʻamalosi e galue faʻalagolago i siʻosiʻomaga faigata ona o le malosi ole vailaʻau o le SiC ma le malosi faʻainisinia.

Mea Fa'aeletonika Maualuluga
SiCOI e mafai ai mea fa'aeletonika e fa'atumauina le fa'atinoga ma le fa'atuatuaina i le maualuga o le vevela, fa'amanuiaina o ta'avale, va'alele, ma fa'aoga fa'apisinisi e fa'aletonu ai masini silicon masani.

Meafaigaluega Photonic ma Optoelectronic
O le tu'ufa'atasiga o mea fa'apitoa a le SiC ma le fa'amalama fa'amalama e fa'afaigofie ai le tu'ufa'atasia o fa'ainitaneti fa'ainitaneti ma le fa'aleleia atili o le fa'aogaina o le vevela.

Mea Fa'aeletonika Fa'amaa'a Fa'aalaala
Ona o le faʻapalepale faʻamalositino o le SiC, o le SiCOI wafers e lelei mo avanoa avanoa ma faʻaoga faaniukilia e manaʻomia ai masini e faʻafefe ai siosiomaga maualuga.

SiCOI wafer's Q&A

Q1: O le a le SiCOI wafer?

A: SiCOI e tu mo Silicon Carbide-on-Insulator. O se fausaga fa'ama'i semiconductor lea o lo'o fa'apipi'iina ai se vaega manifinifi o le silicon carbide (SiC) i luga o se mea fa'amama (e masani lava o le silicon dioxide, SiO₂), lea e lagolagoina e se mea'ai silicon. O lenei fausaga e tu'ufa'atasia ai mea lelei a SiC ma le fa'amama eletise mai le insulator.

Q2: O a mea sili ona lelei o SiCOI wafers?

A: O faʻamanuiaga autu e aofia ai le maualuga o le gau, vaʻavaʻavaʻa lautele, faʻaleleia lelei le vevela, sili atu le malosi o le masini, ma le faʻaitiitia o le malosi o le parasitic faʻafetai i le faʻamalama. O lenei mea e tau atu i le faʻaleleia atili o le faʻatinoga o masini, lelei, ma le faʻamaoni.

Q3: O a faʻaoga masani a SiCOI wafers?

A: O loʻo faʻaaogaina i le eletise eletise, masini RF maualuga, masini MEMS, mea faʻaeletonika maualuga-vevela, masini ata, ma mea faʻaeletonika faʻamalosi.