Silicon Carbide (SiC) Tasi-Crystal Substrate - 10 × 10mm Wafer

Fa'amatalaga Puupuu:

O le 10 × 10mm Silicon Carbide (SiC) tasi-crystal substrate wafer o se mea semiconductor maualuga-faatinoga fuafuaina mo le isi augatupulaga eletise eletise ma optoelectronic talosaga. O lo'o fa'aalia ai le fa'aogaina o le vevela fa'apitoa, va'ava'a lautele, ma le mautu lelei o vaila'au, SiC substrates e maua ai le fa'avae mo masini e fa'agaoioia lelei i lalo o le vevela maualuga, maualuga taimi, ma tulaga maualuga voltage. O nei substrates e sa'o- tipi i 10 × 10mm sikuea kiliva, lelei mo suʻesuʻega, faʻataʻitaʻiga, ma le faʻaogaina o masini.

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Fa'ata'ita'iga o le Silicon Carbide (SiC) fa'ama'i mea'ai

Vaaiga lautele o le Silicon Carbide (SiC).

O le10 × 10mm Silicon Carbide (SiC) fa'ama'i fa'ama'i fa'ama'i e tasio se mea semiconductor maualuga-faatinoga ua fuafuaina mo le isi augatupulaga eletise eletise ma optoelectronic talosaga. O lo'o fa'aalia ai le fa'aogaina o le vevela fa'apitoa, va'ava'a lautele, ma le mautu lelei o vaila'au, Silicon Carbide (SiC) substrate wafer e maua ai le fa'avae mo masini e fa'atino lelei i lalo o le vevela maualuga, maualuga taimi, ma tulaga maualuga voltage. O nei substrates e sa'o-oti i totonu10 × 10mm sikuea meataalo, lelei mo suʻesuʻega, faʻataʻitaʻiga, ma faʻaogaina masini.

Gaosiga Fa'avae ole Silicon Carbide (SiC) substrate wafer

Silicon Carbide (SiC) substrate wafer o lo'o gaosia e ala i le Physical Vapor Transport (PVT) po'o le fa'atupuina o auala. O le fa'agasologa e amata ile pa'u SiC mama-maualuga o lo'o fa'atūina i totonu o se fa'a'a'afi. I lalo o le vevela vevela e sili atu i le 2,000 ° C ma se siosiomaga pulea, o le pauta e faʻafefe i totonu o le ausa ma toe tuʻuina i luga o se tioata fatu e faʻaeteete ma le faʻaeteete, faʻatupuina se ingot tioata tasi lapoʻa, faʻaleagaina.

O le taimi lava e tupu ai le SiC boule, e maua ai:

Fa'a'otiina: O 'ili uaea taimane sa'o e tipi le SiC i totonu o ni fasi meata'i po'o ni meataalo.

Tu'u ma olo: O luga e fa'amafolafola e aveese fa'ailoga ili ma maua ai se mafiafia tutusa.

Faila Mechanical Chemical (CMP): Ausia se fa'ai'uga fa'ata epi-sauni ma matua maualalo le talatala.

Doping e filifili ai: Nitrogen, alumini, po'o le boron doping e mafai ona fa'afeiloa'i e fa'afetaui ai mea tau eletise (n-ituaiga po'o le p-ituaiga).

Su'esu'ega lelei: E fa'amautinoaina e le su'esu'ega fa'ata'ita'i le mafolafola mafolafola mafolafola, mafiafia tutusa, ma le tele o fa'aletonu e fa'amalieina ai mana'oga fa'a-semiconductor.

O lenei faiga e tele-laasaga e maua ai le malosi 10 × 10mm Silicon Carbide (SiC) substrate wafer chips ua saunia mo le tuputupu aʻe o le epitaxial poʻo le faʻaogaina saʻo o masini.

O meafaitino uiga o le Silicon Carbide (SiC) substrate wafer

O le Silicon Carbide (SiC) substrate wafer e masani lava ona faia i4H-SiC or 6H-SiCpolytypes:

4H-SiC:Faʻaalia le maualuga o le eletise eletise, faʻapitoa mo masini eletise e pei o MOSFET ma Schottky diodes.
6H-SiC:Tuuina atu mea fa'apitoa mo RF ma vaega optoelectronic.

Mea fa'aletino autu o le Silicon Carbide (SiC) su'ega wafer:

Avanoa lautele:~ 3.26 eV (4H-SiC) - e mafai ai ona maualuga le malepelepe eletise ma maualalo suiga gau.
Fa'avevela vevela:3–4.9 W/cm·K – fa'amama lelei le vevela, fa'amautinoa le mautu i faiga fa'amalo maualuga.
Malosi:~ 9.2 i luga ole fua ole Mohs - faʻamautinoa le tumau ole masini ile gaioiga ma le faʻaogaina o masini.

Fa'aoga ole Silicon Carbide (SiC).

O le faʻaogaina o le Silicon Carbide (SiC) substrate wafer e taua ai i latou i le tele o alamanuia:

Malosiaga Fa'aeletonika: Fa'avae mo MOSFETs, IGBTs, ma Schottky diodes o lo'o fa'aaogaina i ta'avale eletise (EVs), sapalai eletise fa'apisinisi, ma fa'afouina malosiaga fa'afouina.

RF & Microwave Devices: Lagolago transistors, amplifiers, ma radar vaega mo 5G, satelite, ma talosaga puipuiga.

Optoelectronics: Faʻaaogaina i UV LEDs, photodetectors, ma laser diodes lea e maualuga ai le manino o le UV ma le mautu e taua tele.

Aerospace & Puipuiga: Mea fa'alagolago mo le vevela maualuga, fa'aeletonika fa'ama'a'a.

Fa'alapotopotoga Su'esu'e & Iunivesete: Lelei mo su'esu'ega fa'asaienisi meafaitino, fa'ata'ita'iga masini fa'ata'ita'iga, ma su'esu'eina faiga fou epitaxial.

Fa'amatalaga mo Silicon Carbide (SiC) substrate wafer Chips

Meatotino	Taua
Tele	10mm × 10mm sikuea
mafiafia	330–500 μm (fa'atonu)
Polytype	4H-SiC poʻo le 6H-SiC
Fa'atonuga	C-vaalele, ese-axis (0°/4°)
Fa'ai'uga	Itu-tasi po'o itu-lua polesi; epi-sauni avanoa
Filifiliga Doping	N-ituaiga poʻo P-ituaiga
Vasega	Fa'ailoga su'esu'e po'o le tulaga o masini

FAQ o le Silicon Carbide (SiC) mea'ai mea'ai

Q1: O le a le mea e sili atu ai le sili atu o le silicon Carbide (SiC) nai lo le faʻamaʻi masani masani?
O le SiC e ofoina atu le 10x sili atu le malosi o le fanua, sili atu le vevela o le vevela, ma le maualalo o suiga o le gau, ma avea ai ma mea lelei mo le maualuga-lelei, maualuga-masini masini e le mafai ona lagolagoina e le silikoni.

Q2: E mafai ona tuʻuina atu le 10 × 10mm Silicon Carbide (SiC) substrate wafer ma faʻapipiʻi epitaxial?
Ioe. Matou te tu'uina atu mea'ai epi-sauni ma e mafai ona tu'uina atu fa'ama'i ma fa'aputu epitaxial fa'aleaganu'u e fa'amalieina ai le masini eletise po'o mana'oga gaosiga o LED.

Q3: O loʻo maua le lapopoa masani ma le doping?
E matua'i. E ui o le 10 × 10mm chips e masani mo suʻesuʻega ma faʻataʻitaʻiga masini, fua faʻapitoa, mafiafia, ma faʻamatalaga doping e avanoa pe a talosaga.

Q4: E fa'afefea le umi o nei fafie i si'osi'omaga ogaoga?
SiC o loʻo faʻatumauina le faʻamaoni faʻatulagaina ma le eletise i luga aʻe o le 600 ° C ma lalo ifo o le maualuga o le radiation, ma faʻamaonia ai mo le vateatea ma mea tau eletise.

Faatatau ia tatou

XKH faʻapitoa i atinaʻe tekonolosi, gaosiga, ma faʻatau atu o tioata faʻapitoa faʻapitoa ma mea tioata fou. O a matou oloa e tautuaina mea fa'aeletonika mata, mea fa'atau eletise, ma le militeri. Matou te ofoina atu vaega opitika Safaira, ufiufi tioata telefoni feʻaveaʻi, Ceramics, LT, Silicon Carbide SIC, Quartz, ma semiconductor wafers tioata. Faatasi ai ma le tomai faʻapitoa ma meafaigaluega faʻapitoa, matou te sili atu i le gaosiga o oloa e le masani ai, faʻamoemoe e avea ma taʻutaʻua optoelectronic mea faʻatekonolosi atinaʻe.