12 inisi SIC substrate silicon carbide vasega muamua lautele 300mm lapopo'a tele 4H-N Talafeagai mo le malosi maualuga masini dissipation vevela

Fa'amatalaga Puupuu:

O le 12-inisi silicon carbide substrate (SiC substrate) o se lapo'a lapo'a, maualuga-fa'atinoga semiconductor mea substrate faia mai se tioata e tasi o le silicon carbide. Silicon carbide (SiC) o se mea lautele gap gap semiconductor mea e sili ona lelei eletise, vevela ma mea faʻainisinia, lea e faʻaaogaina lautele i le gaosiga o masini faʻaeletoroni i le malosi maualuga, maualuga taimi ma siosiomaga vevela maualuga. O le 12-inisi (300mm) substrate o le faʻamatalaga faʻapitoa o loʻo i ai nei o tekonolosi carbide silicon, lea e mafai ona faʻaleleia atili le gaosiga lelei ma faʻaitiitia tau.

Auina imeli ia matou

Fa'amatalaga Oloa

Faailoga o oloa

Uiga o oloa

1. maualuga conductivity vevela: o le conductivity vevela o le silicon carbide e sili atu nai lo le 3 taimi o le silikoni, lea e talafeagai mo le mana maualuga masini dissipation vevela.

2. Malosi o le fanua malepelepe maualuga: Ole malosi ole fanua malepe e 10 taimi ole silicon, talafeagai mo talosaga maualuga.

3.Wide bandgap: O le bandgap o le 3.26eV (4H-SiC), e talafeagai mo le maualuga o le vevela ma le maualuga o taimi faʻaoga.

4. Malosi maualuga: Mohs maaa o le 9.2, lona lua na o taimane, sili ona lelei le ofuina ma le malosi faʻainisinia.

5. Faʻamautu faʻamaʻi: malosi faʻafefete, faʻatinoga mautu i le maualuga o le vevela ma le siosiomaga faigata.

6. Tele tele: 12 inisi (300mm) substrate, faʻaleleia lelei le gaosiga, faʻaitiitia le tau o le iunite.

7.Low defect density: maualuga le tulaga maualuga tasi tioata tuputupu aʻe tekonolosi e faʻamautinoa ai le maualalo o le faʻaletonu ma le maualuga maualuga.

Fa'atonuga fa'aoga autu o oloa

1. Malosiaga eletise:

Mosfets: Fa'aaogaina i ta'avale eletise, ta'avale afi fa'apisinisi ma fa'aliliu eletise.

Diodes: pei o Schottky diodes (SBD), faʻaaogaina mo le faʻasaʻo lelei ma le fesuiaʻiina o sapalai eletise.

2. Rf masini:

Rf power amplifier: fa'aoga i nofoaga autu o feso'ota'iga 5G ma feso'ota'iga satelite.

Masini Microwave: E talafeagai mo le radar ma faiga fa'afeso'ota'i uaealesi.

3. Ta'avale malosi fou:

Faiga fa'aeletise: fa'atonu afi ma fa'aliliu mo ta'avale eletise.

Fa'aputuga fa'apipi'i: Fa'atonu eletise mo masini fa'apipi'i vave.

4. Talosaga fa'apisinisi:

High voltage inverter: mo fale gaosi oloa pulea ma pulega malosi.

Smart grid: Mo HVDC felauaiga ma eletise eletise transformers.

5. Vaalele:

Mea tau eletise maualuga: talafeagai mo siosiomaga vevela maualuga o mea tau vaalele.

6. Vaega su'esu'e:

Su'esu'ega semiconductor lautele bandgap: mo le atina'eina o mea fou ma masini semiconductor.

O le 12-inisi silicon carbide substrate o se ituaiga maualuga-faatinoga semiconductor material substrate ma meatotino sili ona lelei e pei o le conductivity vevela maualuga, malosi fanua malepe maualuga ma le va lautele. E faʻaaogaina lautele i le eletise eletise, masini leitio, taavale malosi fou, faʻatautaia fale gaosi oloa ma le aerospace, ma o se mea autu e faʻaleleia ai le atinaʻeina o le isi augatupulaga o masini eletise lelei ma maualuga.

E ui o le silicon carbide substrates i le taimi nei e itiiti ni fa'aoga tuusa'o i mea fa'akomepiuta fa'atau e pei o matatioata AR, o lo latou gafatia i le pulea lelei o le paoa ma mea fa'aeletonika laiti e mafai ona lagolagoina mama mama, maualuga-fa'atinoga fa'avevela vaifofo mo masini AR/VR i le lumana'i. I le taimi nei, o le atinaʻeina autu o le silicon carbide substrate o loʻo faʻatumauina i fale gaosi oloa e pei o taavale fou malosi, fesoʻotaʻiga fesoʻotaʻiga ma fale gaosi oloa, ma faʻalauteleina le semiconductor alamanuia e atiina ae i se itu sili atu ona lelei ma faatuatuaina.

XKH ua tuuto atu i le tuʻuina atu o 12 "SIC substrates maualuga ma lagolago faʻapitoa faʻapitoa ma auaunaga, e aofia ai:

1. Tuuina atu fa'apitoa: E tusa ai ma mana'oga o tagata fa'atau e tu'uina atu fa'asagaga eseese, fa'ata'ita'iga tioata ma substrate togafitiga i luga.

2. Fa'atonuga o le fa'agasologa: Tu'u atu i tagata fa'atau le lagolago fa'apitoa o le tuputupu a'e o le epitaxial, gaosiga o masini ma isi faiga e fa'aleleia ai le fa'atinoga o oloa.

3. Faʻataʻitaʻiga ma faʻamaonia: Tuʻuina atu faʻamaonia faʻaletonu ma faʻamaonia lelei e faʻamautinoa ai o le substrate e fetaui ma tulaga faʻapisinisi.

4.R&d felagolagoma'i: Atina'e fa'atasi ni masini carbide silicon fou ma tagata fa'atau e fa'alauiloa fa'atekonolosi fou.

Siata fa'amaumauga

1 2 inisi Silicon Carbide (SiC) Substrate Fa'amatalaga
Vasega		ZeroMPD Gaosiga Vasega(Z Vasega)	Gaosiga Fa'ata'atia Vasega(P Vasega)		Fa'ailoga Tulaga (D Vasega)
Diamita		3 0 0 mm~305mm
mafiafia	4H-N	750μm±15μm	750μm±25μm
	4H-SI	750μm±15μm	750μm±25μm
Fa'asinomaga ole Wafer		Tu'u ese: 4.0° agai i le <1120 >±0.5° mo le 4H-N, I luga ole axis: <0001>±0.5° mo le 4H-SI
Micropipe Density	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Tete'e	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Primary Flat Orientation		{10-10} ±5.0°
Primary Flat Umi	4H-N	N/A
	4H-SI	Notch
Tuusaunoaga Tupito		3 mm
LTV/TTV/Bow/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Talatala		Polani Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Ta'eta'e Tu'u I le Malamalama Maualuluga Papatusi Hex I Malamalama Maualuga Maualuga Polytype Areas I le Malamalama Maualuga Vaaiga Carbon Inclusions Su'ega Sili Sili I luga o le Malamalama Maualuga		Leai Vaega fa'aopoopo ≤0.05% Leai Vaega fa'aopoopo ≤0.05% Leai			Fa'aputu umi ≤ 20 mm, tasi umi≤2 mm Vaega fa'aopoopo ≤0.1% Vaega fa'aopoopo≤3% Vaega fa'aopoopo ≤3% Fa'aopoopo umi≤1×wafer diameter
Tipi Chips E Malamalama Malosi Maualuga		Leai se faatagaina ≥0.2mm lautele ma loloto			7 faatagaina, ≤1 mm taitasi
(TSD) Fa'ase'e fa'avili fa'a filo		≤500 cm-2		N/A
(BPD) Fa'avae va'alele va'alele		≤1000 cm-2		N/A
Silicon Surface Contamination E le Malamalama Maualuga		Leai
afifiina		Tele-wafer kaseti po'o se atigi apa e tasi
Fa'amatalaga:
1 Fa'agata fa'aletonu e fa'atatau i luga atoa o ga'o masi se'i vagana ai le pito e fa'ate'aina. 2E tatau ona siaki na'o mata Si. 3 O fa'amaumauga fa'aletonu e na'o le KOH wafers ua togitogia.

XKH o le a faʻaauau pea ona teu faʻafaigaluega i suʻesuʻega ma atinaʻe e faʻalauiloa ai le faʻaogaina o le 12-inisi silicon carbide substrates i le lapopoa, faʻaletonu maualalo ma le maualuga maualuga, aʻo suʻesuʻeina e XKH ana faʻaoga i vaega o loʻo faʻaalia e pei o mea faʻatau eletise (e pei o le eletise mo masini AR / VR) ma quantum computing. E ala i le faʻaitiitia o tau ma faʻateleina le gafatia, XKH o le a aumaia le manuia i le semiconductor alamanuia.