2 inisi SiC Wafers 6H po'o le 4H Semi-Insulating SiC Substrates Dia50.8mm

Silicon carbide substrate e mafai ona vaevaeina i ituaiga conductive ma semi-insulating ituaiga e tusa ai ma resistivity. Conductive silicon carbide masini e masani ona faʻaaogaina i taʻavale eletise, gaosiga o le eletise photovoltaic, felauaiga nofoaafi, nofoaga autu o faʻamatalaga, faʻatonuina ma isi mea tetele. O loʻo i ai i le alamanuia taʻavale eletise se manaʻoga tele mo faʻataʻitaʻiga silicon carbide substrates, ma i le taimi nei, Tesla, BYD, NIO, Xiaopeng ma isi kamupani taʻavale malosi fou ua fuafua e faʻaogaina masini faʻapitoa poʻo modules.

Semi-insulated silicon carbide masini e masani ona faʻaaogaina i 5G fesoʻotaʻiga, fesoʻotaʻiga taʻavale, talosaga mo le puipuiga a le atunuʻu, faʻasalalauga faʻamatalaga, aerospace ma isi fanua. E ala i le faʻatupuina o le gallium nitride epitaxial layer i luga o le semi-insulated silicon carbide substrate, o le gallium nitride epitaxial wafer e mafai ona faʻaogaina atili i masini microwave RF, lea e masani ona faʻaaogaina i le fanua RF, e pei o le eletise eletise i le 5G fesootaiga ma uaea leitio i le puipuiga a le atunuu.

O le gaosiga o oloa silicon carbide substrate e aofia ai le atinaʻeina o meafaigaluega, faʻapipiʻiina o mea mataʻutia, tuputupu aʻe tioata, tipi tioata, faʻaogaina o le wafer, faʻamamaina ma suʻega, ma le tele o isi fesoʻotaʻiga. I tulaga o mea mataʻutia, o loʻo tuʻuina atu e le alamanuia Songshan Boron mea faʻapitoa mo le maketi, ma ua ausia ni faʻatauga laiti. O le vaega lona tolu o mea semiconductor o loʻo faʻatusalia e le silicon carbide o loʻo i ai se sao taua i pisinisi faʻaonaponei, faʻatasi ai ma le faʻavavevaveina o le faʻaogaina o taavale fou malosi ma faʻaoga photovoltaic, o le manaʻoga mo le silicon carbide substrate o le a faʻafeiloaʻi i se tulaga faʻafefe.