2 inisi SiC Wafers 6H po'o le 4H Semi-Insulating SiC Substrates Dia50.8mm

E mafai ona vaevaeina le substrate silicon carbide i le ituaiga conductive ma le ituaiga semi-insulating e tusa ai ma le resistivity. O masini conductive silicon carbide e faʻaaogaina tele i taʻavale eletise, gaosiga o le eletise photovoltaic, felauaiga i luga o nofoaafi, nofoaga autu o faʻamaumauga, faʻatumuina ma isi atinaʻe. O le alamanuia o taʻavale eletise e tele le manaʻoga mo substrates conductive silicon carbide, ma i le taimi nei, ua fuafua Tesla, BYD, NIO, Xiaopeng ma isi kamupani taʻavale fou e faʻaaogaina masini poʻo modules eseese silicon carbide.

O masini silicon carbide semi-insulated e faʻaaogaina tele i fesoʻotaʻiga 5G, fesoʻotaʻiga taʻavale, faʻaoga puipuiga faʻaleatunuu, fesiitaiga o faʻamatalaga, vaʻalele ma isi matāʻupu. I le faʻatupulaʻia o le vaega epitaxial gallium nitride i luga o le substrate silicon carbide semi-insulated, o le silicon-based gallium nitride epitaxial wafer e mafai ona faia atili i masini microwave RF, lea e faʻaaogaina tele i le matāʻupu RF, e pei o power amplifiers i fesoʻotaʻiga 5G ma leitio detectors i le puipuiga faʻaleatunuu.

O le gaosiga o oloa o le silicon carbide substrate e aofia ai le atinaʻeina o meafaigaluega, le faʻapipiʻiina o mea mata, le tuputupu aʻe o le tioata, le tipiina o le tioata, le faʻagasologa o le wafer, le faʻamamaina ma le faʻataʻitaʻiina, ma le tele o isi fesoʻotaʻiga. I tulaga o mea mata, o le Songshan Boron industrie e tuʻuina atu mea mata o le silicon carbide mo le maketi, ma ua ausia ni faʻatauga laiti. O mea semiconductor o le tupulaga lona tolu o loʻo faʻatusalia e le silicon carbide e iai sona sao taua i le alamanuia faʻaonaponei, faʻatasi ai ma le faʻavavevaveina o le ulufale atu i taʻavale fou o le malosi ma faʻaoga photovoltaic, o le manaʻoga mo le silicon carbide substrate ua lata ona aumaia se tulaga e suia ai.