200mm 8inch GaN i luga o le safaira Epi-layer wafer substrate

Fa'amatalaga Puupuu:

O le gaosiga o gaosiga e aofia ai le tuputupu aʻe o le GaN i luga o le safaira e faʻaogaina ai auala faʻapitoa e pei o le uʻamea faʻamaʻi uʻamea-organic (MOCVD) poʻo le molecular beam epitaxy (MBE). O le faʻapipiʻiina o loʻo faʻatinoina i lalo o tulaga faʻatonutonu e faʻamautinoa ai le maualuga o le tioata ma le tutusa ata tifaga.

Auina imeli ia matou

Fa'amatalaga Oloa

Faailoga o oloa

Folasaga o oloa

O le 8-inisi GaN-on-Sapphire substrate o se mea semiconductor sili ona lelei e fausia i le Gallium Nitride (GaN) layer e tupu ae le safaira substrate. O mea nei e ofoina atu mea tau fela'uaiga fa'aeletoroni lelei ma e lelei mo le fausiaina o masini semiconductor maualuga-mamana ma maualuga.

Metotia Gaosi

Talosaga

O le 8-inisi GaN-on-Sapphire substrate e maua ai le tele o talosaga i vaega eseese e aofia ai fesoʻotaʻiga microwave, radarsystems, tekinolosi uaea, ma optoelectronics. O nisi o talosaga masani e aofia ai:

1. RF faʻamalosi malosi

2. Alamanuia moli LED

3. Masini feso'ota'iga feso'ota'iga uaealesi

4. Mea fa'aeletonika mo siosiomaga maualuga-vevela

5. Omasini ptoelectronic

Fa'amatalaga o oloa

-Tula: O le lapo'a e 8 inisi (200 mm) le lautele.

- Tulaga Lelei: O le pito i luga o loʻo faʻalelei i se maualuga maualuga o le lamolemole ma faʻaalia le lelei tele e pei o le faʻata.

- Mafiafia: E mafai ona faʻapipiʻiina le mafiafia o le GaN e faʻatatau i manaʻoga faʻapitoa.

- Fa'apipi'i: O le mea fa'apipi'i e fa'apipi'iina ma le fa'aeteete i mea fa'aanti-static e puipuia ai le fa'aleagaina i le taimi o femalagaiga.

- Orientation Flat: O le mea'ai o lo'o i ai se fa'atonuga fa'apitoa e fesoasoani ai i le fa'aogaina o le wafer ma le fa'aogaina i le taimi o fa'agaio'iga o masini.

- O isi fa'amaufa'ailoga: O fa'amatalaga patino o le mafiafia, resistivity, ma le fa'aogaina o le dopant e mafai ona fa'atulagaina e tusa ai ma mana'oga o tagata fa'atau.

Faʻatasi ai ma ana mea faʻapitoa ma mea faʻapitoa, o le 8-inisi GaN-on-Sapphire substrate o se filifiliga faʻatuatuaina mo le atinaʻeina o masini semiconductor maualuga i pisinisi eseese.

Vagana GaN-On-Sapphire, e mafai foi ona matou ofoina atu i le fanua o talosaga masini eletise, o le aiga oloa e aofia ai 8-inisi AlGaN / GaN-on-Si epitaxial wafers ma 8-inisi P-cap AlGaN / GaN-on-Si epitaxial wafers. I le taimi lava e tasi, matou te faʻafouina le faʻaogaina o lana lava 8-inisi GaN epitaxy tekinolosi i totonu o le microwave, ma atiina ae se 8-inisi AlGaN / GAN-on-HR Si epitaxy wafer lea e tuʻufaʻatasia le maualuga o le faʻatinoga ma le lapopoa, tau maualalo. ma fetaui ma tulaga masani 8-inisi masini faiga. I le faaopoopo atu i le gallium nitride e faavae i le silicon, o loo i ai foi a matou laina oloa o AlGaN/GaN-on-SiC epitaxial wafers e fetaui ma manaoga o tagata faatau mo mea epitaxial gallium nitride e faavae i le silicon.