3 inisi 76.2mm 4H-Semi SiC mea'ai mea'ai fa'asili Silicon Carbide Semi-faalumaina SiC wafer

3inch 76.2mm 4H-Semi SiC substrate wafer Silicon Carbide Semi-faalumaina SiC wafers Ata Fa'aalia

Fa'amatalaga Puupuu:

Tulaga maualuga tasi tioata SiC wafer (Silicon Carbide) i alamanuia faaeletonika ma optoelectronic.3inch SiC wafer o se isi augatupulaga semiconductor mea, semi-insulating silicon-carbide wafers o le 3-inisi le lautele.O wafers ua faʻamoemoe mo le fausiaina o le mana, RF ma masini optoelectronics.

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Fa'amatalaga

3-inisi 4H semi-insulated SiC (silicon carbide) substrate wafers o se mea semiconductor masani faaaogaina.4H faʻaalia se fausaga tioata tetrahexahedral.Semi-insulation o lona uiga o le substrate e maualuga uiga tetee ma e mafai ona vavae ese mai le tafe o loʻo iai nei.

O ia mea fa'apipi'i fa'atosina o lo'o iai uiga nei: maualuga le vevela, maualalo le gau, sili atu le maualuga o le vevela, ma sili ona lelei masini ma vaila'au.Talu ai ona o le silicon carbide o loʻo i ai se va tele o le malosi ma e mafai ona tatalia le maualuga o le vevela ma tulaga maualuga eletise eletise, 4H-SiC semi-insulated wafers o loʻo faʻaaogaina lautele i le eletise eletise ma le leitio (RF) masini.

O faʻaoga autu o 4H-SiC semi-insulated wafers e aofia ai:

1--Power electronics: 4H-SiC wafers e mafai ona faʻaaogaina e gaosia ai masini e sui ai le mana e pei o MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), IGBTs (Insulated Gate Bipolar Transistors) ma Schottky diodes.O nei masini e maualalo le faʻaogaina ma le fesuiaiga o gau i le maualuga o le voltage ma le maualuga o le vevela siosiomaga ma ofoina atu le maualuga ma le faʻamaoni.

2--Radio Frequency (RF) Devices: 4H-SiC semi-insulated wafers e mafai ona faʻaaogaina e fau ai le malosi maualuga, faʻateleina eletise eletise RF, faʻalavelave puʻe, filiga, ma isi masini.Silicon carbide e sili atu le maualuga o le faʻaogaina o le faʻaogaina ma le faʻamautu o le vevela ona o le tele o le faʻaogaina o le eletise ma le maualuga o le faʻaogaina o le vevela.

3--Optoelectronic masini: 4H-SiC semi-insulated wafers e mafai ona faʻaaogaina e gaosia ai le malosi o le laser diodes, UV moli vaʻaia ma optoelectronic integrated circuits.

I tulaga tau maketi, o le manaʻoga mo 4H-SiC semi-insulated wafers o loʻo faʻateleina faʻatasi ma le faʻatupulaia o fanua o eletise eletise, RF ma optoelectronics.E mafua lenei mea ona o le silicon carbide o loʻo i ai le tele o faʻaoga, e aofia ai le malosi o le malosi, taavale eletise, malosi faʻafouina ma fesoʻotaʻiga.I le lumanaʻi, o le maketi mo 4H-SiC semi-insulated wafers o loʻo tumau pea le faʻamoemoeina ma e faʻamoemoe e suitulaga mea masani silicon i talosaga eseese.