4 inisi SiC Wafers 6H Semi-Insulating SiC Substrates prime, su'esu'ega, ma togi fa'ata

4 inisi SiC Wafers 6H Semi-Insulating SiC Substrates prime, su'esu'ega, ma le fa'ailoga fa'ailoga Ata Fa'aalia

Fa'amatalaga Puupuu:

Semi-insulated silicon carbide substrate e faia e ala i le tipiina, olo, polesi, faamamaina ma isi tekinolosi gaosi pe a uma le tuputupu ae o semi-insulated tioata carbide carbide.O se laulau poʻo le multilayer tioata tioata e tupu aʻe i luga o le substrate e fetaui ma manaʻoga lelei e pei o le epitaxy, ona faia lea o le masini microwave RF e ala i le tuʻufaʻatasia o le mamanu ma le afifiina.Avanoa e pei ole 2inch 3inch 4incgh 6inch 8 inisi fale gaosi oloa, su'esu'ega ma su'ega vasega semi-insulated silicon carbide substrates tioata tasi.

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Fa'amatalaga Oloa

Faailoga o oloa

Fa'amatalaga o oloa

Vasega			Zero MPD Vasega Gaosia (Visi Z)			Vasega Gaosia Fa'ata'atia (Visi P)		Vasega Dummy (Vaega D)
Diamita			99.5 mm~100.0 mm
	4H-SI		500 μm±20 μm			500 μm±25 μm
Fa'asinomaga ole Wafer			Tu'u ese: 4.0° aga'i i< 1120 > ± 0.5° mo le 4H-N, I luga ole axis: <0001>±0.5° mo le 4H-SI
	4H-SI		≤1cm^-2			≤5 cm^-2		≤15 cm^-2
	4H-SI		≥1E9 Ω·cm					≥1E5 Ω·cm
Primary Flat Orientation		{10-10} ±5.0°
Primary Flat Umi		32.5 mm±2.0 mm
Lua Mafolafola Umi		18.0 mm±2.0 mm
Tulaga Lua mafolafola		Silisi fa'asaga i luga: 90° CW.mai Prime flat ±5.0°
Tuusaunoaga Tupito		3 mm
LTV/TTV/Bow/Warp		≤3 μm/≤5 μm/≤15 μm/≤30 μm						≤10 μm/≤15 μm/≤25 μm/≤40 μm
Talatala			C foliga				Polish		Ra≤1 nm
			Si foliga	CMP	Ra≤0.2 nm					Ra≤0.5 nm
Ta'eta'e Tu'u I le Malamalama Maualuluga		Leai						Umi fa'aputu ≤ 10 mm, tasi umi≤2 mm
Papatusi Hex I Malamalama Maualuga Maualuga		Vaega fa'aopoopo ≤0.05%						Vaega fa'aopoopo ≤0.1%
Polytype Areas I le Malamalama Maualuga		Leai						Vaega fa'aopoopo≤3%
Vaaiga Carbon Inclusions		Vaega fa'aopoopo ≤0.05%						Vaega fa'aopoopo ≤3%
Su'ega Sili Sili I luga o le Malamalama Maualuga		Leai						Fa'aputuga umi≤1＊diamita wafer
Sisi Chips Maualuluga I Malosiaga Malamalama		Leai se fa'atagaina ≥0.2 mm le lautele ma le loloto						5 faatagaina, ≤1 mm taitasi
Silicon Surface Contamination I le Malosi Maualuga		Leai
afifiina		Tele-wafer kaseti po'o se atigi apa e tasi